MARKING CODE 1G1 Search Results

Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003

Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003

85X15

Abstract: 63FBGA hynix nand hynix nand spare area bad block HY27 hynix hy27 hynix nand 1G hynix nand flash HY27U
Contextual Info: HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary 0.1 1) Add 1.8V Operation Product to Data sheet

Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary

hynix nand 1G

Abstract: hynix nand flash HY27 hynix nand hy27ua hynix 1g flash memory hynix nand spare area 48TSOP hynix nand flash memory
Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary

capacitor Y5S 022

Abstract: BC Z5U 1KV BC RR 152 1KV X7R 3KV 3300pf radial ceramic disc Vishay BC 038 IEC EN 60065 REPORT S100K VISHAY Z5U 3KV EIA-198 method 103 47pF 50V NPO ceramic disk capacitor
Contextual Info: VISHAY INTE R TE C HNO L O G Y , IN C . INTERACTIVE data book CERAMIC DISC CAPACITORS vishay BCcomponents vsD-db0071-0409 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

zener 2B1

Abstract: marking code ZENER 5c1 zener diode 5B1 zener diode marking 3t1 planar transistor 5B1 zener 5c1 3A1 zener diode marking code 5b1 STZ8000
Contextual Info: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation

zener 2B1

Abstract: 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1
Contextual Info: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation

zener 2B1

Abstract: marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode
Contextual Info: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation

HY27US081G1M

Abstract: hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming hynix nand reset nand flash HYNIX Hynix Nand flash code Hynix E NAND
Contextual Info: Preliminary HY27US 08/16 1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

HGR0924

Abstract: 102M 250M 700M HGR0714 HGR0908
Contextual Info: HGR. Vishay Draloric Metal Glaze Resistors, Standard FEATURES • Stable metal glaze film on ceramic substrate • High voltage strength capabilities • High ohmic values • Excellent stability STANDARD ELECTRICAL SPECIFICATIONS MODEL POWER RATING LIMITING ELEMENT

marking code 1g1

Contextual Info: HGR. Vishay Draloric Metal Glaze Resistors, Standard FEATURES • Stable metal glaze film on ceramic substrate • High voltage strength capabilities • High ohmic values • Excellent stability STANDARD ELECTRICAL SPECIFICATIONS MODEL POWER RATING LIMITING ELEMENT

Contextual Info: HGR. Vishay Draloric Metal Glaze Resistors, Standard FEATURES • Stable metal glaze film on ceramic substrate • High voltage strength capabilities • High ohmic values • Excellent stability STANDARD ELECTRICAL SPECIFICATIONS MODEL POWER RATING LIMITING ELEMENT

marking code 1g1

Abstract: HGR0714 HGR0939 102M 250M 700M HGR0908 HGR0924 HGR1354
Contextual Info: HGR. Vishay Draloric Metal Glaze Resistors, Standard FEATURES • Stable metal glaze film on ceramic substrate • High voltage strength capabilities • High ohmic values • Excellent stability STANDARD ELECTRICAL SPECIFICATIONS MODEL P 40˚C W LIMITING ELEMENT

marking CODE MH

Abstract: PHILIPS dual gate mosfets transistor 1G1
Contextual Info: DISCRETE SEMICONDUCTORS BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR

1354

Abstract: 102M 250M 700M HGR0714 HGR0908 51m1
Contextual Info: HGR. Vishay Draloric Metal Glaze Resistors, Standard FEATURES • • • • • Stable metal glaze film on ceramic substrate High voltage strength capabilities High ohmic values Lead Pb -free solder contacts Pure tin plating provides compatibility with lead (Pb)-free

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

Contextual Info: SIEMENS CMY 91 GaAs MMIC • • • • • • GaAs mixer with integrated IF-amplifier for mobile communication Frequency range 0.8 GHz to 2.5 GHz Very low power consumption 1 mA typ. Single positive supply voltage Operating voltage range: 2.7 to 6 V Miniature package MW6 based on SOT23

HGR 1676

Contextual Info: HGR. Vishay Draloric Metal Glaze Resistors, Standard FEATURES • • • • • Stable metal glaze film on ceramic substrate High voltage strength capabilities High ohmic values Lead Pb -free solder contacts Pure tin plating provides compatibility with lead (Pb)-free

Marking G1s

Contextual Info: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF

Contextual Info: t>LS3T31 0024737 T4T « A P X N AMER PHILIPS/DISCRETE BF990AR L7E T> J V. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 R microminiature envelope with source and substrate interconnected, intended for U H F applications, such as U H F television tuners and

LVC1G17

Abstract: lvc1g175
Contextual Info: SN74LVC1G17 SINGLE SCHMITTĆTRIGGER BUFFER SCES351N − JUNE 2001 − REVISED OCTOBER 2005 D Available in the Texas Instruments D D D D D ±24-mA Output Drive at 3.3 V D Ioff Supports Partial-Power-Down Mode NanoStar and NanoFree Packages Supports 5-V VCC Operation

Contextual Info: SN74LVC1G14 SINGLE SCHMITT-TRIGGER INVERTER www.ti.com SCES218S – APRIL 1999 – REVISED SEPTEMBER 2005 FEATURES • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V

LVC1G14

Contextual Info: SN74LVC1G14 SINGLE SCHMITT-TRIGGER INVERTER www.ti.com SCES218S – APRIL 1999 – REVISED SEPTEMBER 2005 FEATURES • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V