MARKING CODE 153 DIODE SOD 23 Search Results

L2ED

Abstract: MBR120ESFT1 MBR120ESFT3
Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

sod marking L2E

Abstract: MBR120ESFT1 MBR120ESFT1G MBR120ESFT3 MBR120ESFT3G MBR120 MBR120ESF
Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

NSR0320MW2T1

Abstract: NSR0320MW2T1G NSR0320MW2T3G
Contextual Info: NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts Typ @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B

MBR140SFT1

Abstract: MBR140SFT3 SOD-123LF
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MARKING L3L

Abstract: MSC 0036 MBR130LSFT1 code l3l
Contextual Info: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR120VLSFT1G

Abstract: MBR120VLSFT3G MBR120VLSFT1 MBR120VLSFT3
Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

MBR120LSFT1

Abstract: MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G Diode SOd-123 marking cu
Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR120

Contextual Info: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

MBR130LSFT1G

Abstract: MBR130LSFT1
Contextual Info: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

3170L

Abstract: AN569 NTD3055L170 NTD3055L170T4 SMD310 marking code 24 sot-323
Contextual Info: NTD3055L170 Power MOSFET 9.0 Amps, 60 Volts, Logic Level N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 9.0 AMPERES 60 VOLTS RDS on = 170 mΩ

SOD-563

Abstract: LED Driver A114 A115 JESD22 MBR0530 NCP5007 NCP5007SNT1 NCP5007SNT1G smd code marking sot23-5
Contextual Info: NCP5007 Compact Backlight LED Boost Driver The NCP5007 is a high efficiency boost converter operating in a current control loop, based on a PFM mode, to drive White LEDs. The current mode regulation allows a uniform brightness of the LEDs. The chip has been optimized for small ceramic capacitors and is capable of

A114

Abstract: A115 JESD22 MBR0530 NCP5007 NCP5007SNT1 NCP5007SNT1G smd code marking sot23 MARKING CODE SMD s1 sot23 smd diode sod-323 marking code 31
Contextual Info: NCP5007 Compact Backlight LED Boost Driver The NCP5007 is a high efficiency boost converter operating in a current control loop, based on a PFM mode, to drive White LEDs. The current mode regulation allows a uniform brightness of the LEDs. The chip has been optimized for small ceramic capacitors and is capable of

Contextual Info: NTD60N03 Power MOSFET 60 Amps, 28 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • Power Supplies Converters

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

T4302

Abstract: t430 369D NTD4302 NTD4302T4 SMD310 sot-223 MOSFET 5M MARKING CODE DIODE SMC
Contextual Info: NTD4302 Power MOSFET 68 Amps, 30 Volts N−Channel DPAK Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature

3170L

Abstract: D-PAK 369D AN569 NTD3055L170 NTD3055L170T4 SMD310 NTD3055
Contextual Info: NTD3055L170 Power MOSFET 9.0 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 9.0 AMPERES 60 VOLTS RDS on = 170 mW

35N15

Abstract: AN569 NTB35N15 NTB35N15T4 SMD310 rc motor speed control
Contextual Info: NTB35N15 Power MOSFET 37 Amps, 150 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

y6 smd zener

Abstract: smd diode SOT-23 marking code Y4 Zener diode smd marking z2 sot Zener diode smd marking 23W smd y6 sot-23 smd code z16 Zener diode smd marking code 51 y smd zener diode code Y5 diode zener smd z5 sot-23 smd zener diode code y9
Contextual Info: SMD ZENER Diodes SMD® ZENER Diodes Description Mechanical Data Philips Components ZENER diodes combine the high­ est quality standards with state-of-the-art production equip­ ment to fulfill the need for generic, low-cost devices. This family offers a broad range of nominal voltage values, test

AN569

Abstract: NTD3055L170 NTD3055L170T4 SMD310 marking code AV sot323 package
Contextual Info: NTD3055L170 Power MOSFET 9.0 Amps, 60 Volts, Logic Level N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 9.0 AMPERES 60 VOLTS RDS on = 170 mΩ