Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING CODE 0* DBM Search Results

    MARKING CODE 0* DBM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    5447/BEA
    Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) PDF Buy
    54LS42/BEA
    Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) PDF Buy
    54LS190/BEA
    Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    TC4511BP
    Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Datasheet

    MARKING CODE 0* DBM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TSA1001

    Abstract: TSA1002 TSA1201 TQFP48 TSA0801 TSA0801CF TSA0801CFT TSA0801IF TSA0801IFT
    Contextual Info: TSA0801 8-BIT, 40MSPS, 40mW A/D CONVERTER • 8-bit A/D converter in deep submicron CMOS ■ ■ ■ ■ ■ ■ ■ ■ ORDER CODE Temperature Range Part Number Conditioning Marking TSA0801CF 0°C to +70°C TQFP48 Tray SA0801C TSA0801CFT 0°C to +70°C TQFP48


    Original
    TSA0801 40MSPS, TSA0801CF TQFP48 SA0801C TSA0801CFT TSA0801IF TSA1001 TSA1002 TSA1201 TQFP48 TSA0801 TSA0801CF TSA0801CFT TSA0801IF TSA0801IFT PDF

    Contextual Info: SIEMENS BGA312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code


    OCR Scan
    BGA312 Q62702-G0042 T-143 PDF

    Contextual Info: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs


    OCR Scan
    EHA07312 Q62702-G0042 OT-143 PDF

    Contextual Info: SIEMENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl • 3 dB-bandwidth: DC to 2.4 G RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code


    OCR Scan
    BGA310 Q62702-G0041 T-143 PDF

    Contextual Info: TSA0801 8-BIT, 40MSPS, 40mW A/D CONVERTER • 8-bit A/D converter in deep submicron CMOS ■ ■ ■ ■ ■ ■ ■ ■ ORDER CODE Temperature Range Part Number Conditioning Marking TSA080 1CF 0°C to +70°C TQFP48 Tray SA0801C 0°C to +70°C TQFP48 Tape & Reel


    Original
    TSA0801 40MSPS, 40Msps 40Msps TSA1001, TSA1002 TSA1201. TSA080 PDF

    Contextual Info: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code


    OCR Scan
    EHA07312 Q62702-G0041 OT-143 PDF

    SCHOTTKY DIODE SOT-143

    Abstract: METAL DETECTOR circuit for make AN1124 HSMS-285x chip diode 047 diode MARKING A1 diode schottky code 10 esd diode a2 on semiconductor marking code sot marking code nt
    Contextual Info: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector diodes has been designed and optimized for use in small signal Pin < -20 dBm applications at frequencies below


    Original
    HSMS-285x OT-23/SOT-143 HSMS-282x HSMS-286x OT-323 SC70-3 OT-363 SC70-6 SCHOTTKY DIODE SOT-143 METAL DETECTOR circuit for make AN1124 chip diode 047 diode MARKING A1 diode schottky code 10 esd diode a2 on semiconductor marking code sot marking code nt PDF

    METAL DETECTOR circuit for make

    Abstract: 915 MHz RFID SCHOTTKY DIODE SOT-143 Microwave detector diodes rf detector diode Microwave PIN diode spice diode MARKING A1 Microwave detector diodes 18 GHz HSMS-285x marking code nt
    Contextual Info: Agilent HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Features • Surface Mount SOT-23/ SOT-143 Packages Description Important Note: For detector applications with input power levels greater than –20 dBm, use the HSMS-282x series at frequencies


    Original
    HSMS-285x OT-23/ OT-143 HSMS-282x HSMS-286x OT-363 SC70-6 5989-2494EN 5989-4022EN METAL DETECTOR circuit for make 915 MHz RFID SCHOTTKY DIODE SOT-143 Microwave detector diodes rf detector diode Microwave PIN diode spice diode MARKING A1 Microwave detector diodes 18 GHz marking code nt PDF

    diode 8255

    Abstract: LINEAR MARKING 8253/8254 MARKING e6 SOT26 8251 cross c5 marking code sot-323 Diode BAY 80 sot-23-3 c6 MARKING C3 SOT-323 Diode c4z
    Contextual Info: Bay Linear Inspire the Linear Power B8250 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features The B-8250 line of zero bias Schottky detector diodes by Bay Linear have been engineered for use in small signal Pin<-20 dBm applications at frequencies below 2.0


    Original
    B8250 B-8250 diode 8255 LINEAR MARKING 8253/8254 MARKING e6 SOT26 8251 cross c5 marking code sot-323 Diode BAY 80 sot-23-3 c6 MARKING C3 SOT-323 Diode c4z PDF

    BFR360T

    Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
    Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    BFR360T VPS05996 BFR360T BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325 PDF

    Transistor p1f

    Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
    Contextual Info: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website


    Original
    FPD4000AS FPD4000AS 200mA Transistor p1f MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS PDF

    PHEMT marking code a

    Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
    Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original
    FPD4000AF FPD4000AF PHEMT marking code a FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A PDF

    P3F filtronic

    Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
    Contextual Info: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency


    Original
    FPD10000AF FPD10000AF FPD10000AF) P3F filtronic pHEMT FET marking A MIL-HDBK-263 PHEMT marking code a PHEMT marking code B PDF

    A08 monolithic amplifier

    Abstract: mar 11sm MAV-4 Code A08 RF Semiconductor A04 monolithic amplifier A03 monolithic amplifier MAV-11SM MAR-4SM marking a06 WW107
    Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +18 dBm output JFREQ. MHz MODEL NO. GAIN, dB Typical at MHz ABSOLUTE MAXIMUM RATING7 MAXIMUM DYNAMIC VSWR POWER, dBm RANGE Typ. note 5 note 1 Typ. Output Input (1 dB (no Comp.) damage)


    Original
    WW107 WW107 RRR137 RRR116 A08 monolithic amplifier mar 11sm MAV-4 Code A08 RF Semiconductor A04 monolithic amplifier A03 monolithic amplifier MAV-11SM MAR-4SM marking a06 PDF

    Contextual Info: ECG006 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x x x x x x DC – 5.5 GHz +15.5 dBm P1dB at 1 GHz +32 dBm OIP3 at 1 GHz 15 dB Gain at 1 GHz 4.0 dB Noise Figure at 2 GHz Available in lead-free / green SOT-363, SOT-86 and SOT89 Package Styles


    Original
    ECG006 OT-363, OT-86 ECG006 capacitor08 1-800-WJ1-4401 PDF

    Contextual Info: ECG006 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x x x x x x DC – 5.5 GHz +15.5 dBm P1dB at 1 GHz +32 dBm OIP3 at 1 GHz 15 dB Gain at 1 GHz 4.0 dB Noise Figure at 2 GHz Available in lead-free / green SOT-363, SOT-86 and SOT89 Package Styles


    Original
    ECG006 OT-363, OT-86 ECG006 1-800-WJ1-4401 PDF

    mar8

    Abstract: mini-circuits MAR-8 VV105 monolithic amplifier A04 MAV-11 A08 marking MAR-8 MCL MAR-8 A07 RF Amplifier marking A06 amplifier
    Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω Flat-Pack BROADBAND DC to 2 GHz MAV MAR up to +17.5 dBm output MODEL NO. o o o o J FREQ. MHz GAIN, dB Typical at MHz note 1 fL fU 100 500 1000 2000 MIN. DC THERMAL CAPD Case MAXIMUM DYNAMIC VSWR ABSOLUTE DATA Style OPERATING RESISPOWER, dBm RANGE


    Original
    MAV-11 mar8 mini-circuits MAR-8 VV105 monolithic amplifier A04 MAV-11 A08 marking MAR-8 MCL MAR-8 A07 RF Amplifier marking A06 amplifier PDF

    Contextual Info: ECG002 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x x x x x x DC – 6 GHz +15.5 dBm P1dB at 1 GHz +29 dBm OIP3 at 1 GHz 20 dB Gain at 1 GHz 3.8 dB Noise Figure at 2 GHz Available in lead-free / green SOT-363, SOT-86 and SOT89 Package Styles


    Original
    ECG002 OT-363, OT-86 ECG002 1-800-WJ1-4401 PDF

    Contextual Info: ECG001 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • • • • • • DC – 6 GHz +12.5 dBm P1dB at 1 GHz +25 dBm OIP3 at 1 GHz 22 dB Gain at 1 GHz 3.4 dB Noise Figure at 2 GHz Available in lead-free / green


    Original
    ECG001 OT-89 OT-363 ECG001 1-800-WJ1-4401 PDF

    transistor P2F

    Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
    Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original
    FPD2000AS FPD2000AS 350mA transistor P2F p2f 250 PHEMT marking code a p2F 45 MIL-HDBK-263 40 P1dB 2W transistor marking code 1325 PDF

    Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original
    FPD2000AS FPD2000AS 350mA PDF

    AN1124

    Abstract: A004R HSMS-285X HSMS-285Y
    Contextual Info: HSMS-285Y Zero Bias Schottky Detector Diodes In Surface Mount SOD-523 Package Data Sheet Description/Applications Features The HSMS-285Y of Avago Technologies is a zero bias Schottky detector diodes that designed and optimized for use in small signal Pin < -20 dBm applications at


    Original
    HSMS-285Y OD-523 HSMS-285Y HSMS-285Y-BLKG HSMS-285Y-TR1G AV01-0117EN AV01-0690EN AN1124 A004R HSMS-285X PDF

    marking r4 SOT343

    Abstract: bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948
    Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3  Cascadable 50 -gain block 4  Unconditionally stable  Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1  Noise figure NF = 2.2 dB at 1.8 GHz


    Original
    BGA427 25-Technologie VPS05605 EHA07378 OT343 marking r4 SOT343 bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948 PDF

    Contextual Info: REV. S ta tu s REVISION 0 6 /1 8 /9 6 TS A. Electrical specifications 25 ° C 1. Pri Source Impedance; 600 0 ± 1 0 % 2. Sec Load Impedance; 520 0 3. MAX Output Power; 3 dBm (2 mW) 4. Frequency Response; ± 0 .5 dB 300 Hz to 3.5 KHz 5. DC Unbalance; 0 mA


    OCR Scan
    PDF