MARKING CODE 0* DBM Search Results

TSA1001

Abstract: TSA1002 TSA1201 TQFP48 TSA0801 TSA0801CF TSA0801CFT TSA0801IF TSA0801IFT
Contextual Info: TSA0801 8-BIT, 40MSPS, 40mW A/D CONVERTER • 8-bit A/D converter in deep submicron CMOS ■ ■ ■ ■ ■ ■ ■ ■ ORDER CODE Temperature Range Part Number Conditioning Marking TSA0801CF 0°C to +70°C TQFP48 Tray SA0801C TSA0801CFT 0°C to +70°C TQFP48

Contextual Info: SIEMENS BGA312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code

Contextual Info: SIEMENS BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 11 dB typical gain at 1.0 GHz • 9 dBm typical P.\ ¿b at 1 0 Gl• 3 dB-bandwidth: DC to 2.0 Gl RFINoCircuit Diagram EHA07312 Type Marking Ordering Code BGA 312 BMs

Contextual Info: SIEMENS BGA310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 i2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1 0 Gl • 3 dB-bandwidth: DC to 2.4 G RF IN o- Circuit Diagram EHA07312 Type Marking Ordering Code

Contextual Info: TSA0801 8-BIT, 40MSPS, 40mW A/D CONVERTER • 8-bit A/D converter in deep submicron CMOS ■ ■ ■ ■ ■ ■ ■ ■ ORDER CODE Temperature Range Part Number Conditioning Marking TSA080 1CF 0°C to +70°C TQFP48 Tray SA0801C 0°C to +70°C TQFP48 Tape & Reel

Contextual Info: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code

SCHOTTKY DIODE SOT-143

Abstract: METAL DETECTOR circuit for make AN1124 HSMS-285x chip diode 047 diode MARKING A1 diode schottky code 10 esd diode a2 on semiconductor marking code sot marking code nt
Contextual Info: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector diodes has been designed and optimized for use in small signal Pin < -20 dBm applications at frequencies below

METAL DETECTOR circuit for make

Abstract: 915 MHz RFID SCHOTTKY DIODE SOT-143 Microwave detector diodes rf detector diode Microwave PIN diode spice diode MARKING A1 Microwave detector diodes 18 GHz HSMS-285x marking code nt
Contextual Info: Agilent HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Features • Surface Mount SOT-23/ SOT-143 Packages Description Important Note: For detector applications with input power levels greater than –20 dBm, use the HSMS-282x series at frequencies

diode 8255

Abstract: LINEAR MARKING 8253/8254 MARKING e6 SOT26 8251 cross c5 marking code sot-323 Diode BAY 80 sot-23-3 c6 MARKING C3 SOT-323 Diode c4z
Contextual Info: Bay Linear Inspire the Linear Power B8250 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features The B-8250 line of zero bias Schottky detector diodes by Bay Linear have been engineered for use in small signal Pin<-20 dBm applications at frequencies below 2.0

BFR360T

Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Transistor p1f

Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
Contextual Info: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website

PHEMT marking code a

Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

P3F filtronic

Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
Contextual Info: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency

A08 monolithic amplifier

Abstract: mar 11sm MAV-4 Code A08 RF Semiconductor A04 monolithic amplifier A03 monolithic amplifier MAV-11SM MAR-4SM marking a06 WW107
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +18 dBm output JFREQ. MHz MODEL NO. GAIN, dB Typical at MHz ABSOLUTE MAXIMUM RATING7 MAXIMUM DYNAMIC VSWR POWER, dBm RANGE Typ. note 5 note 1 Typ. Output Input (1 dB (no Comp.) damage)

Contextual Info: ECG006 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x x x x x x DC – 5.5 GHz +15.5 dBm P1dB at 1 GHz +32 dBm OIP3 at 1 GHz 15 dB Gain at 1 GHz 4.0 dB Noise Figure at 2 GHz Available in lead-free / green SOT-363, SOT-86 and SOT89 Package Styles

Contextual Info: ECG006 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x x x x x x DC – 5.5 GHz +15.5 dBm P1dB at 1 GHz +32 dBm OIP3 at 1 GHz 15 dB Gain at 1 GHz 4.0 dB Noise Figure at 2 GHz Available in lead-free / green SOT-363, SOT-86 and SOT89 Package Styles

mar8

Abstract: mini-circuits MAR-8 VV105 monolithic amplifier A04 MAV-11 A08 marking MAR-8 MCL MAR-8 A07 RF Amplifier marking A06 amplifier
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω Flat-Pack BROADBAND DC to 2 GHz MAV MAR up to +17.5 dBm output MODEL NO. o o o o J FREQ. MHz GAIN, dB Typical at MHz note 1 fL fU 100 500 1000 2000 MIN. DC THERMAL CAPD Case MAXIMUM DYNAMIC VSWR ABSOLUTE DATA Style OPERATING RESISPOWER, dBm RANGE

Contextual Info: ECG002 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x x x x x x DC – 6 GHz +15.5 dBm P1dB at 1 GHz +29 dBm OIP3 at 1 GHz 20 dB Gain at 1 GHz 3.8 dB Noise Figure at 2 GHz Available in lead-free / green SOT-363, SOT-86 and SOT89 Package Styles

Contextual Info: ECG001 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • • • • • • DC – 6 GHz +12.5 dBm P1dB at 1 GHz +25 dBm OIP3 at 1 GHz 22 dB Gain at 1 GHz 3.4 dB Noise Figure at 2 GHz Available in lead-free / green

transistor P2F

Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz

Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS

AN1124

Abstract: A004R HSMS-285X HSMS-285Y
Contextual Info: HSMS-285Y Zero Bias Schottky Detector Diodes In Surface Mount SOD-523 Package Data Sheet Description/Applications Features The HSMS-285Y of Avago Technologies is a zero bias Schottky detector diodes that designed and optimized for use in small signal Pin < -20 dBm applications at

marking r4 SOT343

Abstract: bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz

Contextual Info: REV. S ta tu s REVISION 0 6 /1 8 /9 6 TS A. Electrical specifications 25 ° C 1. Pri Source Impedance; 600 0 ± 1 0 % 2. Sec Load Impedance; 520 0 3. MAX Output Power; 3 dBm (2 mW) 4. Frequency Response; ± 0 .5 dB 300 Hz to 3.5 KHz 5. DC Unbalance; 0 mA