MARKING CE SOT523 Search Results

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

Contextual Info: 2DA2018 ADV AN CE I N FORM AT I ON 12V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1)

Contextual Info: D5V0L4B5SO Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-directional ESD Protection Low Channel Input Capacitance Typically Used at Portable Electronics, Cellular Handsets and

Contextual Info: D5V0L4B5TS Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-Directional ESD Protection Low Channel Input Capacitance Typically Used at Portable Electronics, Cellular Handsets and

Contextual Info: D5V0L4B5V ADV AN CE I N FORM AT I ON 4 CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-directional ESD Protection

Contextual Info: D5V0L4B5S Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-directional ESD Protection Low Channel Input Capacitance Typically Used at Portable Electronics, Cellular Handsets and

Contextual Info: D5V0L2B3W Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 2 Channels of Bi-Directional ESD Protection Low Channel Input Capacitance Typically Used at Portable Electronics, Cellular Handsets and

Contextual Info: D5V0L2B3SO Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 2 Channels of Bi-Directional ESD Protection Low Channel Input Capacitance Typically Used in Cellular Handsets, Portable Electronics,

Contextual Info: D5V0L2B3T ADV AN CE I N FORM AT I ON 2 CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 2 Channels of Bi-directional ESD Protection

Contextual Info: Central CMUT2907A Sem iconductor Corp. SURFACE MOUNT ULTRAmini PNP SILICON TRANSISTOR DESCRIPTION: The C E N T R A L SEM IC O N D U CTO R CM UT2907A type is an P N P silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface

Contextual Info: D5V0L1B2LP4 ADV AN CE I N FORM AT I ON LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV Ultra Low Profile 0.4mm , Ideal for Thin Portable Electronics

Contextual Info: D5V0L1B2WS ADV AN CE I N FORM AT I ON LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 1 Channel of ESD Protection Low Channel Input Capacitance

Contextual Info: D5V0L1B2T ADV AN CE I N FORM AT I ON LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV 1 Channel of ESD Protection Low Channel Input Capacitance

2SA1774

Abstract: 2SC4617
Contextual Info: UTC 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 MARKING 2 1 A5 3 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER Collector-Base Voltage

Contextual Info: Central BC856T SERIES BC857T SERIES TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and

BC856T

Abstract: MARKING CE SOT523
Contextual Info: BC856T SERIES BC857T SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for

Contextual Info: BC846T SERIES BC847T SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846T and BC847T Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for

Contextual Info: BC846T SERIES BC847T SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846T and BC847T Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for

Contextual Info: BC856T SERIES BC857T SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for

1N916

Abstract: MMBT3906T SC-89
Contextual Info: MMBT3906T General Purpose Transistor PNP Silicon COLLECTOR 3 3 1 BASE P b Lead Pb -Free 1 2 SC-89 (SOT-523F) 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO

1N914

Abstract: MMBT2222AT SC-89
Contextual Info: MMBT2222AT Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 3 1 1 P b Lead Pb -Free 2 BASE SC-89 (SOT-523F) 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Value 40

113 marking code PNP transistor

Abstract: transistor GTO BC856T 113 marking code transistor
Contextual Info: Central“ BC856T SERIES BC857T SERIES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and

Contextual Info: Central BC846T SERIES BC847T SERIES Semiconductor Corp. DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC846T and BC847T Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

MMBT1015

Abstract: MMBT1815
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR 3 3 1 FEATURES 2 *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1815 SOT-23 1 2 SOT-523 3 3