MARKING CA Search Results

mark Bb

Abstract: e5 marking
Contextual Info: SEMICONDUCTOR USFB13L MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 BB JA 1 CATHODE MARK No. Item Marking Description Device Mark BB USFB13L * Lot No. JA Manufacturing date Year/Week Note) * Lot No. marking method Year Periode (Year)

USFZ5.6V

Contextual Info: SEMICONDUCTOR USFZ5.6V MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 56 0 1 1 CATHODE MARK No. Item Marking Description Device Mark 56 USFZ5.6V * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

PG15FBUSC

Contextual Info: SEMICONDUCTOR PG15FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 BD 1 0 1 2 1 No. Item Marking Description Device Mark BD PG15FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

3400-0034

Contextual Info: Universal Marking System Possibilities Component Marking Terminal Block Marking Cable Marking Wire Marking Signs Name Plates Legend Plates Logo Plates 2 Altech Corp. • 35 Royal Road • Flemington, NJ 08822-6000 • Phone 908 806-9400 • FAX (908)806-9490 • www.altechcorp.com

3J10

Abstract: PG03JSUSC
Contextual Info: SEMICONDUCTOR PG03JSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 3J 1 0 1 2 1 No. Item Marking Description Device Mark 3J PG03JSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

marking CA

Abstract: KTX301U ca marking
Contextual Info: SEMICONDUCTOR KTX301U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking CA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark C KTX301U hFE Grade A Y A , GR(B) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ●

transistor t05

Abstract: SMC Package marking 2 t05 transistor laser T05 Package transistor marking t05 T053 t05 marking
Contextual Info: SEMICONDUCTOR PG05NSSMC MARKING SPECIFICATION SMC PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 T05 3 No. Item Polarity 2007. 1. 4 Marking Bar Type Name T05 Lot No. 623 Revision No : 0 Description Cathode PG05NSSMC 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week

1T243

Abstract: PG24NSSMC SMC Package
Contextual Info: SEMICONDUCTOR PG24NSSMC MARKING SPECIFICATION SMC PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 T24 3 No. Item Polarity 2007. 1. 4 Marking Bar Type Name T24 Lot No. 623 Revision No : 0 Description Cathode PG24NSSMC 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week

transistor 623

Abstract: marking on item SMB Package
Contextual Info: SEMICONDUCTOR SMBB36 MARKING SPECIFICATION SMB PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B36 3 No. Item Polarity 2006. 12. 14 Marking Bar Type Name B36 Lot No. 623 Revision No : 0 Description Cathode SMBB36 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week

diode b34

Abstract: marking B34 SMBB34 b34 diode b34 datasheet b34 MARKING B34 on
Contextual Info: SEMICONDUCTOR SMBB34 MARKING SPECIFICATION SMB PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B34 3 No. Item Polarity 2006. 12. 14 Marking Bar Type Name B34 Lot No. 623 Revision No : 0 Description Cathode SMBB34 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week

SMCB36

Abstract: 21B36 SMC Package semiconductor b36 marking on item b36 marking
Contextual Info: SEMICONDUCTOR SMCB36 MARKING SPECIFICATION SMC PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B36 3 No. Item Polarity 2006. 12. 14 Marking Bar Type Name B36 Lot No. 623 Revision No : 0 Description Cathode SMCB36 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week

GN1G

Abstract: SMA Package E140
Contextual Info: SEMICONDUCTOR GN1G MARKING SPECIFICATION SMA 1 PACKAGE 1. Marking method Laser Marking 2. Marking E140 1 2 3 No. Item Marking Polarity Device Name Lot No. 2006. 6. 21 Revision No : 2 Description Bar Cathode E140 GN1G 6 Year 0~9 : 2000~2009 23 Week 23 : 23th Week

SMAB34A

Abstract: B34A
Contextual Info: SEMICONDUCTOR SMAB34A MARKING SPECIFICATION SMA 1 PACKAGE 1. Marking method Laser Marking 2. Marking 2 1 B34A 3 No. Item Polarity 2007. 3. 20 Marking Bar Type Name B34A Lot No. 623 Revision No : 1 Description Cathode SMAB34A 6 Year 0~9 : 2000~2009 23 Week

4600X

Contextual Info: RESISTOR NETWORKS Laser Marking on 4600X Series Riverside, California - June 29, 2010 - Bourns will begin laser marking the 4600X Series of resistor networks on all part numbers starting with date code 1027. Typical Marking Before Change Typical Marking After Change

Contextual Info: Printview: WSB quick marking system; Vertical marking; 1 . 50 2x ; for terminal block width 5 - 17.5 mm; 10 strips with 10 markers per card; consecutive numbers each strip - Item No.: 209-666 . WSB quick marking system; Vertical marking; 1 . 50 (2x); for

Vitramon

Abstract: VISHAY MARKING CODES 820 marking EIA J code marking vitramon VJ marking 82 vitramon Marking marking 430 marking 39 marking code 27
Contextual Info: VJ Vitramon Marking Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors Vishay Vitramon Marking Option Vishay Vitramon can provide on selected MLCC Capacitors a laser marking. Availability with ordering option “M” acc. data sheets. E. I. A. MARKING CODES

transistor k 2628

Abstract: marking CODE 36 A5 MARKING 82 Marking
Contextual Info: CHIP MARKING SYSTEM NOVACAP chip identification marking is accomplished using an excimer laser which does not degrade the ceramic surface or induce microcracks. The marking code is based on EIA 198 two digit code which determines capacitance value. Laser marking is available for chip sizes 0805

BAS19

Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

diode 4148

Abstract: DIODE-4148 A4 marking diode diode MARKING CODE 5d marking A4 marking A7 marking codes sot-23 A4 4148CA 4148SE diode 4148 sot-23
Contextual Info: MMBD4148 / SE / CC / CA SURFACE MOUNT SWITCHING DIODE 4148 4148SE 3 1 4148CC 3 3 2 1 1 2 2 4148CA 3 1 MMBD4148 Marking Code: 5D MMBD4148SE Marking Code: A7 MMBD4148CC Marking Code: A4 MMBD4148CA Marking Code: A1 SOT-23 Plastic Package 2 Absolute Maximum Ratings Ta = 25 OC

Contextual Info: precision 0.5%, 1% tolerance thick film chip resistor EU features • Marking: 1F, 1H: no marking, black body 1E: blue body, no marking 1J: three-digit black marking E-24 only on blue protective coat. 2A ~ 3A four-digit black marking on blue protective coat.

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number

PD3S160

Contextual Info: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: April 18, 2007 August 23, 2006 Discrete Part Marking DCS/PCN-1071 PCN #: PCN #: 1071 TITLE PD3S Family Marking Change IMPACT Device Marking Code Only DESCRIPTION OF CHANGE

kl4 diode

Abstract: kl3 diode kl2 diode kl2 marking kl4 transistor BAT54C KL3 DC marking 08 sot-23 BAT54 BAT54A BAT54C
Contextual Info: BAT54 SCHOTTKY DIODES SOT-23 PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Diodes FEATURES Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25 oC Parameter

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR