MARKING C8 MICRO-X AMPLIFIER Search Results

RFMD RF2048

Contextual Info: RF2048 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features „ „ „ „ MARKING - C8 SI GN S „ DC to 8000MHz Operation Internally matched Input and Output 12dB Small Signal Gain +25dBm Output IP3

smd transistor marking z3

Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

SMD Transistor z6

Abstract: transistor SMD Z2 Transistor smd Z3 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 transistor Z6 SMD z6 SMD TRANSISTOR MARKING Z2
Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

CGR0218Z

Abstract: CGR-0218Z CGR0218ZSR CGA6618 CGR0218ZSB CGR0218ZSQ CGR0218ZTR13 CGR0218ZTR7 RF MICRO DEVICES SOIC-8
Contextual Info: CGR-0218Z CGR-0218Z Push-Pull 5MHz to 210 MHz High Linearity InGaP HBT Amplifier PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description Features RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed

Contextual Info: CGR-0218Z CGR-0218Z Push-Pull 5MHz to 210 MHz High Linearity InGaP HBT Amplifier PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description Features RFMD’s CGR-0218Z is a high performance InGaP HBT MMIC Amplifier designed

10ACPR

Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: CGA-1518Z CGA-1518Z Push-Pull 50MHz to 1000MHz High Linearity InGaP HBT Amplifier PUSH-PULL 50MHz to 1000MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description Features RFMD’s CGA-1518Z is a high performance InGaP HBT MMIC Amplifier. Designed

smd transistor marking j8

Abstract: smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8
Contextual Info: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

cdma800

Abstract: DCS1800 GSM900 RF3809 RF3809PCK-410 RF3809PCK-411 RF3809PCK-412 DCS-1800MHz RF3809PCK-415
Contextual Info: RF3809 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, and UMTS Transceiver Applications

Contextual Info: RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 2.14GHz UMTS Systems • PCS Communication Systems • Digital Communication Systems • Commercial and Consumer Systems Product Description The RF5187 is a highly-linear, low-power amplifier IC. It

MARKING HBT

Abstract: 0610-12
Contextual Info: RF3806 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Class AB Operation for DCS, PCS, and • GaAs HBT Linear Amplifier • Power Amplifier Stage for Commercial UMTS Wireless Infrastructure Product Description The RF3806 is a GaAs power amplifier, specifically

Contextual Info: RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 2.14GHz UMTS Systems • PCS Communication Systems • Digital Communication Systems • Commercial and Consumer Systems Product Description The RF5187 is a highly-linear, low-power amplifier IC. It

rf power amplifier circuit diagram with pcb layout

Abstract: UMTS2100
Contextual Info: RF3806 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Class AB Operation for DCS, PCS, and • GaAs HBT Linear Amplifier • Power Amplifier Stage for Commercial UMTS Wireless Infrastructure Product Description The RF3806 is a GaAs power amplifier, specifically

UMTS transceiver

Contextual Info: RF3809 Preliminary GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, and UMTS Transceiver Applications

Contextual Info: RF3807 Preliminary GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, UMTS, and WLAN Transceiver Applications

Contextual Info: RF3809 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, and UMTS Transceiver Applications

Contextual Info: RF2048 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers

RF3807

Abstract: DCS1800 GSM900 PCS1900 RF3807PCK-410 RF3807PCK-411 RF3807PCK-412 UMTS2100 RF3807PCK-415 banana jack footprint
Contextual Info: RF3807 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, UMTS, and WLAN Transceiver Applications

smd transistor marking z3

Abstract: SMD Transistor z6 smd transistor z4 marking Z6 Capacitance smd transistor marking z1 Transistor z1 SMD marking Z4 transistor SMD Z2 SMD TRANSISTOR MARKING Z2 transistor 6 pin SMD Z2
Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: RF3800 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Driver for 450MHz and 850MHz Basestation • PA Stage for Commercial Wireless Infrastructure Amplifiers Product Description -A- Pin 1 0.005 A The RF3800 is specifically designed for wireless infrastructure applications at 450MHz and 850MHz. Using a

msl 9350

Abstract: jack P4 GSM900 RF3802 RF3802PCBA-410 RF3802PCBA-411 marking code c45 23 C4833
Contextual Info: RF3802 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs HBT Pre-Driver for Basestation Amplifiers • Class AB Operation for GSM/EDGE/CDMA • Power Amplifier Stage for Commercial Wireless Transmitter Applications

Contextual Info: RF3800 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Driver for 450MHz and 850MHz Basestation • PA Stage for Commercial Wireless Infrastructure Amplifiers Product Description -A- Pin 1 0.005 A The RF3800 is specifically designed for wireless infrastructure applications at 450MHz and 850MHz. Using a

0805 capacitor 10 pf

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.

1800mhz rf frequency power amplifier circuit

Abstract: RF2126 PCBA
Contextual Info: RF2126 HIGH POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems