MARKING C5 87 Search Results

MMIC SOT 89 marking CODE

Abstract: MMIC "SOT 89" marking MMIC "SOT89" marking CODE h AG103-G RF transistor marking IN SOT-89 C5 MARKING CODE SOT-89 AG103 marking 25 mmic sot-89 SOT c5 87 marking rf SOT89
Contextual Info: AG103 The Communications Edge TM High Dynamic Range Gain Block Product Features • • • • • • • • 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply Internally matched to 50 Ω Lead-free/Green/RoHScompliant SOT-89 Package

marking L270

Abstract: MMIC "SOT 89" marking 12
Contextual Info: AG103 The Communications Edge TM Product Information High Dynamic Range Gain Block Product Features x x x x x x x x 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply Internally matched to 50 : Lead-free/Green/RoHScompliant SOT-89 Package

Contextual Info: AG103 The Communications Edge TM High Dynamic Range Gain Block Product Features • • • • • • • • • 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply SOT-89 SMT Package Internally matched to 50 Ω

MMIC "SOT 89" marking

Abstract: 103G AG103 AG103-G AG103-PCB JESD22-A114
Contextual Info: AG103 Product Information High Dynamic Range Gain Block Product Features Product Description Functional Diagram 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply Internally matched to 50 Ω Lead-free/Green/RoHScompliant SOT-89 Package

Contextual Info: AG103 The Communications Edge TM Product Information High Dynamic Range Gain Block Product Features x x x x x x x x 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply Internally matched to 50 : Lead-free/Green/RoHScompliant SOT-89 Package

946 SOT89

Abstract: AG103-G MMIC "SOT 89" marking 103G AG103 AG103-PCB JESD22-A114 REGULATOR SOT89 marking l270
Contextual Info: AG103 The Communications Edge TM Product Information High Dynamic Range Gain Block Product Features x x x x x x x x 50 – 870 MHz 13 dB Gain 3 dB Noise Figure >+36 dBm OIP3 +20 dBm P1dB Single +5 Bias Supply Internally matched to 50 : Lead-free/Green/RoHScompliant SOT-89 Package

Contextual Info: RF Jumpers - LISCA LISCA products are designed to meet customer specifications, delivery requirements and budgets. LISCA – Low Loss and Low Intermodulation Soldered Corrugated Cable Assembly. 84 HUBER+SUHNER Application This product line is designed to be used:

mrf8372

Contextual Info: MOTOROLA Order this document by MRF837/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics

transistor NF j1 marking code

Abstract: PD84006L-E EEVHB1V100P EXCELDRC35C J-STD-020B UHF rfid reader grm39
Contextual Info: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

13786

Abstract: L1320
Contextual Info: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

PD85004

Abstract: PD85004 ST 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM39-X7R103K50C560 J-STD-020B PD84002 marking c7 sot-89 marking code murata label
Contextual Info: PD85004 RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

Contextual Info: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

ferroxcube 56-590-65

Abstract: MRF8372 equivalent macro-X ceramic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF837 MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics

freescale semiconductor body marking

Abstract: ML200C marking c5 Z3 marking
Contextual Info: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

iso iec 7816-2

Abstract: CCM02-F503 F844T CCM02-F844B LFT CCM02-2504LFT CCM02-F794LFT F794LFT CCM02-F844B CCM02-F844LFT
Contextual Info: CCM02 Series Features Typical Applications • Operating life 500,000 cycles • Transaction • Insertion force 40N • Identification • EMV • POS • PCI & PCI ready Full Size • Card detection sealed switch Mechanical Contact Electrical Data Number of Contacts

motorola 8372

Abstract: 8372 motorola
Contextual Info: MOTOROLA Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics

XMFP1-M3

Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Contextual Info: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••

iso iec 7816-2

Abstract: CCM02-F796 C-CM02-E50 CCM02-F844LFT
Contextual Info: smartCard2011_6.0.qxd:2002 CCM Catalog.qxd 5/16/11 4:05 PM Page 12 CCM02 Series Features Typical Applications • Operating life 500,000 cycles • Transaction • Insertion force 40N • Identification • EMV • POS • PCI & PCI ready Full Size • Card detection sealed switch

Contextual Info: Markets TABLE OF CONTENTS WW-SSCB06 replaces SA101N16J-NL PAN -S TEE L S y st em O v er vie w PAN-STEEL System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .A1-A6

AC04 motorola

Abstract: Motorola MARKING b27 CP-14 CP15 CP141
Contextual Info: Data Sheet C-5 NETWORK PROCESSOR SILICON REVISION D0 C5NPD0-DS/D Rev 04 Data Sheet C-5 Network Processor Silicon Revision D0 C5NPD0-DS/D Rev 04 Copyright 2002 Motorola, Inc. All rights reserved. No part of this documentation may be reproduced in any form or by any means or used to make any derivative work

Contextual Info: Data Sheet C-5 NETWORK PROCESSOR Freescale Semiconductor, Inc. SILICON REVISION D0 C5NPD0-DS/D Rev 04 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Data Sheet C-5 Network Processor Silicon Revision D0 C5NPD0-DS/D Rev 04 Freescale Semiconductor, Inc.

variable resistor 500

Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest

Contextual Info: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

PD84002

Abstract: PD85006L-E smd transistor marking C14 SMD diode marking L39 3214W-1-103E EXCELDRC35C J-STD-020B PD85 TRANSISTOR AO SMD MARKING 0603 footprint FERRITE BEAD INDUCTOR
Contextual Info: PD85006L-E RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european