MARKING C2M Search Results

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

Contextual Info: ADVANCE MT4 L C2M8B1/2 2 MEG X 8 WIDE DRAM |^ IIC = R O N WIDE DRAM 2 MEG x 8 DRAM 5.0V FAST-PAGE-MODE (MT4C2M8B1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8B1/2) FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6

Contextual Info: ADVANCE MT4 L C2M8A1/2 2 MEG X 8 WIDE DRAM MICRON WIDE DRAM 2 MEG x 8 DRAM 5.0V, FAST-PAGE-MODE (MT4C2M8A1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8A1/2) FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8

Contextual Info: ADVANCE MT4 L C2M8A1/2 2 MEG X 8 WIDE DRAM M IC R O N WIDE DRAM 2 MEG X 8 DRAM 5.0V, FAST-PAGE-MODE (MT4C2M8A1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8A1/2) FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7

Contextual Info: ADVANCE MT4 L C2M8B1/2 S 2 MEG X 8 WIDE DRAM M ICRO N WIDE DRAM 2 MEG X 8 DRAM 5.0V SELF REFRESH ÍMT4C2M8B1/2 S) 3.0/3.3V, SELF REFRESH (MT4LC2M8B1/2 S) FEATURES PIN A SSIG N M EN T (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access

smd code marking QFN-4

Contextual Info: Application Specific Solution from ON Semiconductor NCP1840 8-Channel Programmable LED Driver MARKING DIAGRAM The NCP1840 is a highly integrated general purpose LED driver with the ability to drive up to eight LEDs. A high efficiency, low noise, quad mode charge pump allows the

MARKING c1y

Abstract: MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. +0.2 2.8 -0.3 T06 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 MARKING -0.05 0.3 +0.10 0.13±0.1 0.8 0 to 0.1 PART

Contextual Info: ADVANCE M T4 L C 2M 8B 1/2 2 MEG X 8 W ID E DRAM I^ IIC R D N WIDE DRAM 2 MEG x 8 DRAM 5.0V FAST-PAGE-MODE (MT4C2M8B1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8B1/2) FEATURES PIN ASSIGNMENT (Top View) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

M74HC04B1

Contextual Info: M74HC04 Hex inverter Datasheet - production data Description The M74HC04 is a high-speed CMOS hex inverter manufactured using silicon gate C2MOS technology. DIP14 SO14 TSSOP14 Features The internal circuit is composed of 3 stages including a buffer output which enables high noise

KIC7W32FK

Contextual Info: Under Development The KIC7W32FK is a high speed CTMOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent o LSTTL while maintaining the C MOS low power dissipation. The internal circuit is composed of 3 stage including buffer

KIC7W08FK

Contextual Info: Under Development The KIC7W08FK is a high speed CTMOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent o LSTTL while maintaining the C MOS low power dissipation. The internal circuit is composed of 3 stage including buffer

7wu04

Abstract: 7wu04f
Contextual Info: TC7WU04FJC7WU04FU 3 INVERTER The TC7WUÛ4 is a high speed C2MOS INVERTER fabricated with silicon gate C2MOS technology. It achives the high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. As the internal circuit is composed of single stage

MARKING J1A

Abstract: KIC7SH04FU
Contextual Info: The KIC7SH04FU is a advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Since the internal circuit is composed

Contextual Info: SEMICONDUCTOR KIC7S86FU TECHNICAL DATA SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT EXCLUSIVE OR GATE B B1 5 2 C A C 1 A1 The KIC7S86FU is a high speed C2MOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while

Contextual Info: KIC7SH04FU SEMICONDUCTOR SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT TECHNICAL DATA INVERTER B B1 5 2 C A C 1 A1 4 3 H The KIC7SH04FU is a advanced high speed C2MOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar

Contextual Info: SILICON M O NOLITHIC TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT TC3W03FU CRYSTAL OSCILLATOR The TC3W03FU is a 1C for high speed CMOS crystal oscillator fabricated with silicon gate C2MOS technology. It can be used to make high efficient crystal oscillator

KIC7SH04FU

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIC7SH04FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT INVERTER The KIC7SH04FU is a advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

KIC7W126FK

Contextual Info: Under Development BUFFERS fabricated with silicon gate C MOS technology. It achieve the high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. The require 3 -state control input G to be set low to place the output into the high impedance.

KIC7S86FU

Contextual Info: SEMICONDUCTOR KIC7S86FU TECHNICAL DATA SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT EXCLUSIVE OR GATE B B1 5 2 C A C 1 A1 The KIC7S86FU is a high speed C2MOS EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while

Contextual Info: TC7SH32FJC7SH32FU 2-INPUT OR GATE The TC7SH32 is an advanced high speed CMOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4

Contextual Info: KIC7SH08FU SEMICONDUCTOR SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT TECHNICAL DATA 2-INPUT AND GATE B B1 5 2 C A C 1 A1 4 3 H The KIC7SH08FU is a advanced high speed C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky

KIC7W32FU

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIC7W32FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT DUAL 2-INPUT OR GATE The KIC7W32FU is a high speed C2MOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: SILICON MONOLITHIC TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7SH08F/FU 2-INPUT A N D GATE The TC7SH08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the