MARKING C2 MOS Search Results

TG2202F

Contextual Info: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) v C2 out MARKING gnd Type name

TG2202F

Contextual Info: TO SH IBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9 GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22 dB (Typ.) • CONTROL VOLTAGE : 0 V / 3 V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING

Contextual Info: TO SH IBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9 GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22 dB (Typ.) • CONTROL VOLTAGE : 0 V / 3 V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING

Contextual Info: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT T r i ? ? n ? GaAs MONOLITHIC F 1.9G H z BAND ATTENUATO R PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING

Contextual Info: CAT3636 6-Channel Fractional LED Driver in TQFN 3x3 Description http://onsemi.com TQFN−16 HV3 SUFFIX CASE 510AD LEDC2 NC C1− LEDB1 C1+ VIN C2+ LEDB2 VOUT LEDC1 Top View MARKING DIAGRAMS JAAA AXXX YWW JAAR AXXX YWW JAAA = CAT3636HV3−T2 JAAR = CAT3636HV3−GT2

Contextual Info: DB2S308 Silicon epitaxial planar type Unit: mm For high speed switching circuits • Features  Low forward voltage VF  Short reverse recovery time trr  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: C2

C2 marking code

Contextual Info: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

FDP075N15

Abstract: FDP075N15A FDB075N15A
Contextual Info: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 mΩ Features Description • RDS on = 6.25 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has

Contextual Info: FQA44N30 N-Channel QFET MOSFET 300 V, 43.5 A, 69 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FSB50550A, FSB50550AT Motion SPM 5 Series Features General Description • 500 V RDS on = 1.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50550A and FSB50550AT are an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FR FET®) Technology as a Compact Inverter Solution for

Contextual Info: FSB50660SF, FSB50660SFT Motion SPM 5 SuperFET® Series Features General Description • UL Certified No. E209204 FSB50660SF and FSB50660SFT are a Motion SPM® 5 SuperFET® Series Based on Super Junction MOSFET SuperFET Technology as a Compact Inverter Solution

FSB50325

Contextual Info: FSB50325A, FSB50325AT Motion SPM 5 Series Features General Description • 250 V RDS on = 1.7 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50325A and FSB50325AT are an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FR FET®) Technology as a Compact Inverter Solution for

Contextual Info: FSB50250AS Motion SPM 5 Series Features General Description • 500 V RDS on = 3.8 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50250AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small

Contextual Info: FSB50450A Motion SPM 5 Series Features General Description • 500 V RDS on = 2.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450A is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small

Contextual Info: FSB50760SF, FSB50760SFT Motion SPM 5 SuperFET® Series Features General Description • UL Certified No. E209204 FSB50760SF and FSB50760SFT are a Motion SPM® 5 SuperFET® Series Based on Super Junction MOSFET SuperFET Technology as a Compact Inverter Solution

Contextual Info: FSB50250A, FSB50250AT Motion SPM 5 Series Features General Description • 500 V RDS on = 3.8 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50250A and FSB50250AT are an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FR FET®) Technology as a Compact Inverter Solution for

Contextual Info: FSB50550AS Motion SPM 5 Series Features General Description • 500 V RDS on = 1.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50550AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small

diodes code va

Abstract: VA MARKING
Contextual Info: Not Recommended for New Design, Use 2N7002VC/VAC 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

Contextual Info: FSB50450AS Motion SPM 5 Series Features General Description • 500 V RDS on = 2.4 Max FRFET MOSFET 3-Phase Inverter Including HVICs FSB50450AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small

FSB50825A

Contextual Info: FSB50825AS Motion SPM 5 Series Features General Description • 250 V RDS on = 0.45 Max FRFET MOSFET 3Phase Inverter Including HVICs FSB50825AS is an Advanced Motion SPM® 5 Series Based on Fast-Recovery MOSFET(FRFET®) Technology as a Compact Inverter Solution for Small

FCP380N60E

Contextual Info: SupreFET II FCP380N60E / FCPF380N60E 600V N-Channel MOSFET Features Description ® SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

Contextual Info: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage