MARKING C06 Search Results
MARKING C06 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MG80C186-10/BZA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
|
||
| ICM7555MTV/883 |
|
ICM7555MTV/883 - Dual marked (5962-8950303GA) |
|
||
| MQ80C186-10/BYA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
|
||
| 54121/BCA |
|
54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
|
||
| 54F191/QEA |
|
54F191/QEA - Dual marked (5962-9058201EA) |
|
MARKING C06 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: KEMET Part Number: C0603T104K5RALTU C0603T104K5RALTU, C0603T104K5RAL7867 Capacitor, ceramic, 0.1 uF, +/-10% Tol, 50V, X7R, 0603 General Information Manufacturer: KEMET Marking: UnMkd Electrical Specifications Capacitance: Chip Size: Voltage: Failure Rate: |
Original |
C0603T104K5RALTU C0603T104K5RALTU, C0603T104K5RAL7867) 5c93b52e-c361-48f2-8aa8-d66eacb38871 | |
CQC11001055510Contextual Info: POE-D10-00-E-12 SAFETY STANDARDS REGULATED, REINFORCED INSULATION TYPE, AH SERIES PRODUCT: Ver: 12 CERAMIC DISC CAPACITOR SAFETY RECOGNIZED TYPE: AH SERIES CUSTOMER: DOC. NO.: POE-D10-00-E-12 Ver.: 12 APPROVED BY CUSTOMER VENDOR: : □ WALSIN TECHNOLOGY CORPORATION |
Original |
POE-D10-00-E-12 EF-150C EF-150 PCE-210 PCE-300 SP-160PL SP-260PL CQC11001055510 | |
ac103m
Abstract: ac222m ac472m ic cx 20015 A
|
Original |
POE-D11-00-E-11 EF-150C EF-150 PCE-210 PCE-300 SP-160PL SP-260PL ac103m ac222m ac472m ic cx 20015 A | |
DCX114YU
Abstract: sot 363 marking c14 DCX143TU DCX144EU J-STD-020A 22KW DCX114EU DCX114TU DCX123JU DCX124EU
|
Original |
OT-363 OT-363 OT-363, J-STD-020A MIL-STD-202, DCX114TU DS30347 DCX114YU sot 363 marking c14 DCX143TU DCX144EU J-STD-020A 22KW DCX114EU DCX114TU DCX123JU DCX124EU | |
pan overseas AC CAPACITOR
Abstract: Pan Overseas cx 20015 a ceramic disc capacitor YP0AC151K060 YU0AC222M
|
Original |
POE-D12-00-E-10 POE-D12-00-E-10 EF-150C EF-150 PCE-210 PCE-300 SP-160PL SP-260PL pan overseas AC CAPACITOR Pan Overseas cx 20015 a ceramic disc capacitor YP0AC151K060 YU0AC222M | |
transistor c114
Abstract: transistor c114 diagram transistor c114 diagrams military capacitor m390 cx 2602 c114 ckr06 ceramic capacitor transistor c114 chip C052 series MIL-C-11015
|
Original |
F-3113 MIL-PRF-20 MIL-PRF-39014/01/02/05 MIL-C-11015 C052G/C062G/C114G/ C124G/192G/C202G/C222G C052T/C062T/C114T/ C124T/192T/C202T/C222T C052K/C062K/C114K/ C124K/192K/C202K/C222K transistor c114 transistor c114 diagram transistor c114 diagrams military capacitor m390 cx 2602 c114 ckr06 ceramic capacitor transistor c114 chip C052 series MIL-C-11015 | |
CMR1-04Contextual Info: Central' CMR1-02 CMR1-04 CMR1-06 CMR1-10 Semiconductor Corp. FEATURES: GENERAL PURPOSE RECTIFIER 1.0 AMP, 200 THRU 1,000 VOLTS • • • • • • LOW COST HIGH RELIABILITY SPECIAL SELECTIONS AVAILABLE GLASS PASSIVATED CHIP SUPERIOR LOT TO LOT CONSISTENCY |
OCR Scan |
CMR1-02 CMR1-04 CMR1-06 CMR1-10 CMR1-10 R1-04 CMR1-04 | |
KEMET C0603c222
Abstract: C0603C333 F3102
|
Original |
000pF C0603C123 F3102. F3102 KEMET C0603c222 C0603C333 | |
|
Contextual Info: PPJC7406 20V N-Channel Enhancement Mode MOSFET Voltage 20 V SOT-323 1.3A Current Unit : inch mm Features RDS(ON) , VGS@4.5V, ID@1.3A<77mΩ RDS(ON) , VGS@2.5V, ID@1.0A<90mΩ RDS(ON) , VGS@1.8V, ID@0.7A<120mΩ Advanced Trench Process Technology |
Original |
PPJC7406 OT-323 2011/65/EU IEC61249 OT-323 MIL-STD-750, 2014-REV | |
|
Contextual Info: SN74LVC3G06 TRIPLE INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS www.ti.com SCES364G – AUGUST 2001 – REVISED MAY 2005 FEATURES • • • • • • • • • • • DCT OR DCU PACKAGE TOP VIEW Available in the Texas Instruments NanoStar and NanoFree™ Packages |
Original |
SN74LVC3G06 SCES364G 24-mA 000-V A114-A) A115-A) | |
CSRS045V0P-HF
Abstract: ComChip Date code smd DIODE code marking 20A smd diode 319 SOT-143 MARKING DIODE C06 15 DIODE C06 15 62 sot143 Marking code c06 smd code diode 20a code a1 SMD
|
Original |
CSRS045V0P-HF IEC61000-4-2 IEC61000-4-4 5/50ns) IEC61000-4-5 8/20uS) OT-143 OT-143 MIL-STD-750 CSRS045V0P-HF ComChip Date code smd DIODE code marking 20A smd diode 319 SOT-143 MARKING DIODE C06 15 DIODE C06 15 62 sot143 Marking code c06 smd code diode 20a code a1 SMD | |
|
Contextual Info: Si7005 D IGITA L I 2 C H UMIDITY AND TEMPERATURE S ENSOR Features Relative Humidity Sensor ± 4.5 % RH maximum @ 0–80% RH Temperature Sensor ±0.5 ºC accuracy (typical) ±1 ºC accuracy (maximum @ 0 to 70 °C) |
Original |
Si7005 | |
C0805C103K5RAC
Abstract: C1206 EIA481-1 IEC60286-6 390D 470D C0402 C0805
|
Original |
EIA481-1. IEC60286-6 EIA-198 C0805C103K5RAC C1206 EIA481-1 390D 470D C0402 C0805 | |
|
Contextual Info: DG9421, DG9422 Vishay Siliconix Precision Low-Voltage, Low-Glitch CMOS Analog Switches DESCRIPTION FEATURES Using BiCMOS wafer fabrication technology allows the DG9421, DG9422 to operate on single and dual supplies. Designed for optimal performance at single 5 V and dual |
Original |
DG9421, DG9422 DG9422 DG9421 2011/65/EU 2002/95/EC. | |
|
|
|||
SI3981DVContextual Info: Si3981DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.185 at VGS = - 4.5 V - 1.9 0.260 at VGS = - 2.5 V - 1.6 0.385 at VGS = - 1.8 V - 0.7 • Halogen-free According to IEC 61249-2-21 Definition |
Original |
Si3981DV 2002/95/EC Si3981DV-T1-E3 Si3981DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
473 kck
Abstract: kck 100v 223 k5r 103k ceramic capacitor 103 kck npo 121 j kck k5u 105 capacitor kemet 471 k1k military capacitor m390 471 kck kck capacitor
|
Original |
||
SI3456CContextual Info: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC |
Original |
Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI3456C | |
|
Contextual Info: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition |
Original |
Si3493BDV 2002/95/EC Si3493BDV-T1-E3 Si3493BDV-Temarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI3438DVContextual Info: New Product Si3438DV Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0355 at VGS = 10 V 7.4 0.0425 at VGS = 4.5 V 6.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
Si3438DV 2002/95/EC Si3438DV-T1-E3 Si3438DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: SQ3469EV www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ3469EV AEC-Q101 2002/95/EC SQ3469EV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: SQ3442EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21 |
Original |
SQ3442EV AEC-Q101 2002/95/EC SQ3442EV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: SQ3426EEV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Typical ESD Protection 800 V • AEC-Q101 Qualified |
Original |
SQ3426EEV AEC-Q101 2011/65/EU SQ3426EEV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.047 at VGS = -4.5 V -4 0.080 at VGS = -2.7 V -4 0.090 at VGS = -2.5 V • TrenchFET power MOSFET Qg (TYP.) • PWM optimized |
Original |
Si3443DDV Si3443DDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |