MARKING BSS MOSFET Search Results

marking BSs mosfet

Contextual Info: SIPMOS N Channel MOSFET BSS 131 • SIPMOS - enhancement mode • Drain-source voltage K>* = 240V • Continuous drain current / 0 = 0.10A • Drain-source on-resistance • Total power dissipation %«on> = 16.00 PD = 0.36W Type Marking Ordering code for versions on 8 mm-tape

SA SOT-23

Abstract: diode sv 03
Contextual Info: SIPMOS N Channel MOSFET BSS 123 • SIPMOS - enhancement mode • Drain-source voltage Vfci = 100V • Corrtinuous drain current l D = 0.17A • Drain-source on-resistance • Total power dissipation /%* «• = 6.00 PD - 0.36W Type Marking Ordering code for

Q62702-S506

Contextual Info: SIPMOS N Channel MOSFET BSS 87 • SIPMOS - enhancement mode • Drain-source voltage Vbs = 240V • Continuous drain current l B = 0.29A • Drain-source on-resistance • Total power dissipation 8 ds «»> = 6.0Q PD - 1.0W Type Marking Ordering code for

Contextual Info: BEE D • 023fc.32Q Q0171b7 = « S I P SIPMOS N Channel MOSFET _ S IE M E N S / SPCLi BSS 138 X ^ Z S ' ^ S T _ S EM IC O N D S • SIPMOS - enhancement mode • Draln-source voltage Vt» = 50V • Continuous drain current Io = 0.22A • Drain-source on-resistance

marking BSs mosfet

Abstract: Q62702-S631
Contextual Info: BSS119 SIPMOS N Channel MOSFET • SIPMOS - enhancement mode • Drain-source voltage Vfc» = 100V • Continuous drain current / D = 0.17A • Drain-source on-resistance • Total power dissipation /%>•<«> = 6.00 P0 = 0.36W Type Marking Ordering code for

mosfet SOD 23

Contextual Info: WILLAS FM120-M+ THRU BSS8LT1 FM1200-M+ 200 mAmps, 50 Volts Power MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: WILLAS FM120-M+ THRU BSS8LT1 FM1200-M+ N-CHANNEL POWER MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: 35E D • fl23k3EG QG171bl fl « S I P SIPMOS N Channel MOSFET BSS131 T ' 3 S - ‘XS' SIEMENS/ SPCL-, SEMICONDS • SIPMOS - enhancement mode • Drain-source voltage Vfct = 240V • Continuous drain current l 0 = 0.10A • Oraln-source on-reslstance • Total power dissipation

TR40-10

Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
Contextual Info: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance

Contextual Info: BEE D • flE3b320 0017173 4 « S I P SIPMOS N Channel MOSFET T - S á M S" SIEMENS/ SPCLi SEMICONDS • SIPMOS - depletion mode • Draln-source voltage • Continuous drain current Vas = 250V /„ = 0.04A • Drain-source on-resistance • Total power dissipation

S10V siemens

Contextual Info: SIPMOS P Channel MOSFET BSS84 • SIPMOS - enhancement mode • Drain-source voltage Ifc* = -50V • Continuous drain current l B = -0.13A • Drain-source on-resistance • Total power dissipation «• .} = 1 0 .0 0 PD = 0.36W Type Marking Ordering cod e for

1RF840

Abstract: 376H IRF840 ScansUX102
Contextual Info: PD-9.376H International pæ , Rectifier IRF840 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss ~ 500V R DS on - iD = 8.0A Description Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: P D - 9 .1 2 6 8 F International IQ R Rectifier IRF7506 H E X FE T Pow er M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape and Reel

FR9214

Contextual Info: International IO R Rectifier P D - 9.1658 IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IR F R 9214 StraightLead (IRFU9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R ü S (o n ) = 3 . 0 C Ì b = -2.8A

Contextual Info: I . . I PD -91884 International l R Rectifier SMPS M0SFET IR F P 450A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V dss 500V R d s (o n ) m a x Id 0.40£2 14A Benefits

Contextual Info: PD‘91880 International I R Rectifier IRFP460A smpsmosfet HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V d ss 500V R d s (o n ) m a x 0.27£2 Id 20A Benefits • Low Gate Charge Qg results in Simple

Silicon N Channel MOSFET Tetrode

Abstract: marking code g1s
Contextual Info: SIEMENS Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution 1 =S II Q62702-F1773 CM N Es Package

Contextual Info: PD-91885A International IOR Rectifier SMPS MOSFET IRFBC40A HEXFET Power MOSFET A pplications • • • Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching V dss 600V Rds(on) max Id 1.2£2 6.2A B e n efits • Low Gate Charge Qg results in Simple

marking g1s

Abstract: 3SK238
Contextual Info: HITACHI 3SK238-Silicon N-Channel Dual Gate MOSFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute M aximum Ratings Ta = 25°C

1RF9520

Abstract: diode S68a 68A diode IRF9520S UI5 321 IRF9520 ScansUX102 d68a SMD MARKING "68A"
Contextual Info: P D -9.319G International ire 1Rectifier IRF9520 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S -

Silicon N Channel MOSFET Tetrode

Contextual Info: SIEMENS Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network . HF O utput + DC ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

a31s

Contextual Info: BF 1012 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network AGC O - i X - HF o Input D rain G21 HF Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking jls

Abstract: marking code g1s
Contextual Info: SIEMENS BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Droin HF Output + DC E H A 0 7 2 Î5 ESD: Electrostatic discharge sensitive device, observe handling precaution!

"MARKING CODE T2"

Abstract: marking BSs sot23 n-channel A7520 vishay siliconix code marking marking code, t2 marking marking code T2
Contextual Info: TN2460UTN2460T Vishay Siliconix N-Channel 240-V D-S MOSFET PRODUCT SUMMARY Part Number V (BR)DSS M ,n (V ) TN2460L Id Min (mA) *DS(on) M a x (£2) V GS(th)(V) 6 0 V GS= 1 0 V 0.5 to 1.8 75 6 0 ® VG S= 1 0 V 0.5 to 1.8 51 240 TN2460T FEATURES BENEFITS