MARKING BS INFINEON Search Results

A1E transistor

Contextual Info: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107

Contextual Info: BS 170 I nf ineon la c h n o I og i • s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 VPT05548 • ^GS th = 0-8-2.0V Pin 3 Pin 2 Pin 1 G S Type ^OS b flDS(on) Package Marking BS 170 60 V 0.3 A 5Ü TO-92 BS 170 Type

smd code LGG

Contextual Info: BSP 88 Infineon technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^GS th = 0.6. 1.2V Type BSP 8 8 Type BSP 8 8 ^bs h> 240 V 0.32 A Ordering Code Q67000-S070 ^DS(on) 8 Q Package Marking SOT-223 BSP 88 Tape and Reel Information

FR4 Prepreg

Abstract: data sheet germanium diode smd prepreg 1650M AN091 infineon MARKING BS INFINEON BGA615L7 smd marking s22 BGA615 infineon marking BS
Contextual Info: D a t a S he et , R e v . 1 . 3 , F e b . 2 00 7 B G A 6 15 L7 Silicon Germanium GPS Low Noise Amplifier S m a l l S i g n a l D i s c r et e s Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007.

Contextual Info: Data Sheet, Rev.1.3, February 2007 BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

BGA615L7

Abstract: BGA615 1650M data sheet germanium diode smd FR4 Prepreg GERMANIUM prepreg LNA marking CODE R0 LNA marking R0 FR4 Prepreg for RF PCB
Contextual Info: Data Sheet, Rev.1.3, February 2007 BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Germanium power

Contextual Info: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München

smd code book transistor

Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO
Contextual Info: BSP 92 Infineon t « c h n o l o g i •* SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Pin 1 Type ^bs b BSP 92 -240 V -0.2 A Type BSP 92 Ordering Code Q62702-S653 Pin 2 °D S (on) Package

smd marking code BS sot-23 infineon

Contextual Info: BSS 83P Infineon f*chnologj*4 Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel Drain source voltage '/os • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS oni 2 -0.33

1650M

Abstract: 2000M BGA615L7 T1595
Contextual Info: Data Sheet, Version 1.0, June 2005 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2005-06-14 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München

Contextual Info: HYB39S16160CT-5.5/-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: • full page optional for sequencial wrap around • Multiple Burst Read with Single Write Operation • Automatic Command

smd marking code bs

Abstract: TSOP RECEIVER 39S64160BT-8 MARKING AX5 sdram 4 bank 4096 16 smd code marking t6 P-TSOPII-54
Contextual Info: HYB39S64400/800/160BT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: 7.5 -8 -10 Units fCKmax. 133 125 100 MHz tCK3 7.5 8 10 ns tAC3 5.4 6 7 ns tCK2 10 10 15 ns tAC2 6 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

A86 SMD

Abstract: PC133-333-522 128M-BIT PC100-222-620 128-MBIT
Contextual Info: HYB 39L128160AC/T 128-MBit 3.3V Mobile-RAM 128-MBit Synchronous Low-Power DRAM Datasheet Rev. 2003-02 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page

P-TSOPII-54

Abstract: caz smd PC133 registered reference design
Contextual Info: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10

Contextual Info: HYB 39L128160AC 128-MBit 3.3V Mobile-RAM 128-MBit Synchronous Low-Power DRAM in Chipsize Packages Preliminary Datasheet Rev. 09.2/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and

39S256160T

Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
Contextual Info: HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge

39S64160BT-8

Abstract: SMD MARKING T5 application of sequential circuit CAZ MARKING marking RBY
Contextual Info: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns

Contextual Info: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: -7 -7.5 -8 Units • Automatic and Controlled Precharge Command fCK 143 133 125 MHz • Data Mask for Read/Write Control (x4, x8)

cbx smd code

Abstract: SMD marking code ax2 PC100-222 PC133-333 P-TSOPII-54 smd marking T22
Contextual Info: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge

SMD MARKING T20

Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
Contextual Info: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge

39S256160T

Abstract: PC100-322-620 MARKING AX5 SMD MARKING T20
Contextual Info: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10

P-TSOPII-54

Abstract: Q67100-Q1838 Q67100-Q2781
Contextual Info: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns

PC100-322-620

Abstract: 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620
Contextual Info: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature

tube az1

Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
Contextual Info: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10