MARKING BJW Search Results

TSOT-23

Abstract: AME8570AEIUBF29Z SOT-23 Package marking codes n1 transistors sot-23 2x marking sot-23 Diode SOT-23 marking 27 marking codes transistors a1 sot-23 sot-23 MARKING CODE 21 AME8570 AME8570CEETBF29Y
Contextual Info: AME, Inc. µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,

AME8570AEIUBF29Z

Abstract: en050.00.b08 TSOT-23 AME8570AEETAE26Y AME8570BEETAF44Z AME8570BEET AME8570 1AME BNGW TSOT-23 junction case
Contextual Info: AME µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,

marking 70.4

Contextual Info: AME, Inc. µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,

AME8570AEIUAE29Z

Contextual Info: AME µProcessor Supervisory AME8570 n General Description The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds, reset time intervals, and output driver configurations, all

Contextual Info: AME, Inc. µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,

Gate Drive

Abstract: EPA4271GE-LF marking bjw
Contextual Info: Gate Drive Transformer ELECTRONICS INC. EPA4271GE-LF • Operating Temperature : -40°C to +85°C • Storage Temperature : -40°C to +130°C • Operating Frequency : 50 KHz and Up • Lead-Free Electrical Parameters @ 25° C Primary Inductance µH Min.

BJW transistor

Abstract: SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol

Contextual Info: Transistors IC SMD Type Product specification 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating

marking bjw

Contextual Info: 1000Base-T Module ELECTRONICS INC. EPG4254JE-LF • Smallest Gigabit Magnetic Module • Guaranteed to operate with 10/100Base-TX • Ideal for Multiport 10/100Base-TX as Gigabit Solutions • Complies with or exceeds IEEE 802.3ab 1000Base-T • Suitable for Auto MDIX 10/100Base-TX Applications

3536aa

Abstract: MRB 20 AME8570AEITAF26Z AME8570 AME8570AEETAF23Z sot-23 Marking B1 th308 SC70-4 V8450 704 N SOT23
Contextual Info: AME, Inc. µProcessor Supervisory AME8570 n General Description n Functional Block Diagram AME8570 Push-Pull RESET/ RESETB The AME8570 family allows the user to customize the CPU reset function without any external components. The user has serveral choice of reset voltage thresholds,

Contextual Info: SAMHOP Microelectronics Corp. SM1103/SM1104 300mA CMOS LDO w/ ENABLE GENERAL DESCRIPTION FEATURES The SM1103/SM1104 is a 300mA Low Dropout and Low Noise micro-power Voltage Regulator suitable for battery powered portable equipments. The SM1103/SM1104 designed stable with

QML-38534

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Changes in accordance with NOR 5962-R139-95. 95-05-11 K. Cottongim Corrected figure 1 to move the side view of case outlines X and Z to the right side of the top view for the correct orientation. Figure 1; removed the min limit for the D dimension

Contextual Info: S71NS-N MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16 , 128 Mb (8 Mb x 16) and pSRAM 64 Mb (4 Mb x 16) with pSRAM: 64 Mb (4 Mbx16), 32 Mb (2 Mb x 16) and 16 Mb (1 Mb x 16) ADVANCE INFORMATION Data Sheet

Contextual Info: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory: 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM: 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit)

BP511A

Abstract: cdr01 capacitors C1206W 5122b bx563 kemet capacitors i472 kemet capacitor c1206
Contextual Info: KEMET CERAMIC CHIP/MIL-C-55681 CAPACITOR OUTLINE DRAWINGS DIMENSIONS— MILLIMETERS AND INCHES STYLE KEMET SIZE C0DE CDR01 C D R 02 C D R 03 C D R 04 C 0805 C 1805 C1808 C1812 C D R 05 C 1825 C D R 06 CDR31 C D R 32 C DR33 C D R 34 C D R 35 C2225 C0805 C 1206

ADQ15

Abstract: S71NS256P S71NS128P JEP95
Contextual Info: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burstmode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Burst-mode Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit) and 16 Mb (1 Mb x 16-bit)

Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

Spansion NS064N

Abstract: S71NS128P ns064n S71NS064NA0 Spansion NAND Flash DIE S29NS-N S71NS-N PSRAM* MuxpSRAM JEP95
Contextual Info: S71NS-N MCP Products MirrorBitTM 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

S71NS128P

Abstract: S71NS-N NS064N S29NS-N S71NS064NA0 marking bjw S71NS064NA0-RA
Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

S71VS128R

Abstract: S71VS marking bjw S71VS064R S71NS-N NS064N S29NS-N S71NS064NA0 Spansion NAND Flash S71NS064N80-RA
Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

s71vs128

Abstract: S71VS064R S71VS128R mediatek Spansion NS064N S71VS256 S71VS256R NS064N NS256N S71NS064NA0
Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

S71VS256R

Abstract: S71VS128R
Contextual Info: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)

zilog Z280

Abstract: Z280 CPU z280 EPU
Contextual Info: ZILOG INC blE; ]> < £ 2 iL G E m c^ fl4[]43 Q 02 S 2 1 S 351 m i l l Product Sp ecificatio n Z280 NPU Microprocessor Unit FEATURES • Designed in CMOS for low power operations. ■ Enhanced Z80 CPU instruction set that maintains object-code compatibility with Z80 microprocessor.

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn