MARKING BA 8 PIN Search Results

marking t54

Abstract: 2pa30
Contextual Info: L BAT54 SCHOTTKY BARRIER DIODE BAT54 single diode PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BA T54 -4L J .Q 2.8 0.14 0.48 -*^p d 3§ 038 Pin configuration L 0.70 0.50 3 1= ANODE 2 = NC 3 = CATHODE t .4 2.6 2.4 1.2 R0.1 ÔÔÔ4T ii.8<r 0 .6 0 . 2.00

ba 2nd years

Abstract: KRX101U b.a 1st year ba 2nd year ba 1st year
Contextual Info: SEMICONDUCTOR KRX101U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

ba682

Abstract: diode marking code 682 BA683 MAF100
Contextual Info: I : übe t> : m aaasbos 0 0 1 5 7 3 1 • • ? « s ie g - 7 " - Ô 7 - /5 " Silicon PIN Diodes BA 682 .BA 683 - SIEMENS AKTIENGESELLSCHAF -• Low-loss VHF band switch for TV tuners K A Type1 Marking

ba 2nd years

Abstract: transistor mark BA KRX101E marking BA
Contextual Info: SEMICONDUCTOR KRX101E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

ba 2nd years

Abstract: KRX201E marking BA
Contextual Info: SEMICONDUCTOR KRX201E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

transistor mark BA

Abstract: KRX201U ba 2nd years
Contextual Info: SEMICONDUCTOR KRX201U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

GP 023 DIODE

Abstract: GP 005 DIODE
Contextual Info: BA 895 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications 2 • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners 1 VES05991 Type Marking Pin Configuration Package BA 895 R

h78l05

Abstract: C4149 H78LXXAM H78L12 Marking BA SOT89 TL 873 H78LXX H78LXXAA h78L0 C3745
Contextual Info: HI-SINCERITY Spec. No. : IC200403 Issued Date : 2004.03.01 Revised Date : 2004.08.31 Page No. : 1/10 MICROELECTRONICS CORP. H78LXXAM / BM H78LXXAA / BA H78LXX Series Pin Assignment 3-TERMINAL POSITIVE VOLTAGE REGULATORS 1 2 3-Lead Plastic SOT-89 Package Code: M

StarRam

Abstract: 1MX16Y3VTW
Contextual Info: StarRam Part No : 1MX16Y3VTW DRAM and Flash Specialise SYNCHRONOUS DRAM PIN ASSIGNMENT Top View 50-Pin TSOP FEATURES Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can

Contextual Info: ADVANCE M T48LC 4M 4R 1 S 4 MEG X 4 SDRAM l ^ lld R O N 4 MEG SYNCHRONOUS DRAM 4 SDRAM X Pulsed RAS, Dual Bank, BURST Mode, 3.3V, SELF REFRESH PIN ASSIGNMENT (Top View) • Fully synchronous; all signals (excluding clock enable) registered to positive edge of system clock

SUPER CHIP

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA

MBM29LV800TA-70PF

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV800BA-70PFTN cost
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-6E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(1), 44-pin SOP, and 48-ball FBGA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA

29F800TA

Abstract: 29f800ba MBM29F800 29F800T
Contextual Info: • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP I (Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type)

AS4SD8M16

Contextual Info: SDRAM AS4SD8M16 PRELIMINARY Austin Semiconductor, Inc. 8M x 16 SDRAM PIN ASSIGNMENT Top View SYNCHRONOUS DRAM MEMORY FEATURES • • • • • • • • Single 3.3V Power Supply Fully Synchronous to positive Clock Edge SDRAM CAS Latency = 2 (66 MHz), 3 (75 MHz or 83 MHz)

AX78L05

Abstract: FE0004 AX78LXX C3745 c3641 SOT-89 code BA
Contextual Info: Page No. : 1/10 AX78LXXAM/BM AX78LXXAA/BA AX78LXX Series Pin Assignment 3-Terminal Positive Voltage Regulators 1 2 3-Lead Plastic SOT-89 Package Code: M Pin 1: VOUT Pin 2: GND Pin 3: VIN 3 Description 3-Lead Plastic TO-92 Package Code: A Pin 1: VOUT Pin 2: GND

Contextual Info: ? BMI FUJITSU SEMICONDUCTOR DATA SHEET • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard word-wide pinouts

Contextual Info: IBM0317329N IBM0317329P Advance 512K x 32 Synchronous Graphics RAM Features • Single 3.3V + 0.3 • Fully synchronous; all signals registered on pos­ itive edge ot system clock • 100-pin LQFP 0.65mm lead pitch • Internal pipelined operation; column address

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20858-6E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV008TA-70/-90/MBM29LV008BA-70/-90 • GENERAL DESCRIPTION The MBM29LV008TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each. The MBM29LV008TA/BA are offered in a 40-pin TSOP(1) package. These devices are designed to be programmed

Contextual Info: FLASHMEMORY CMOS MBM29F4ÖÖTÄ#o/Äi 2/MBM29F400 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as EzPROMs • Compatible with JEDEC-standard world-wide pinouts

29LV800

Abstract: ba901
Contextual Info: FLASH MEMORY CMOS X M BA-90/-12 FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs • Compatible with JED EC-standard world-wide pinouts

038329

Contextual Info: IBM038329PQ6 IBM038329NQ6 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on pos­ itive edge ot system clock. Single 3.3V + 0.3 100-pin LQFP 0.65mm lead pitch • Internal pipelined operation; column address can be changed every clock cycle.

MICRON POWER RESISTOR 2W

Contextual Info: OBSOLETE 256K, 512K x 64 SGRAM SODIMMs MT2LG25664 K H, MT4LG51264(K)H SYNCHRONOUS GRAPHICS RAM SODIMM For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT (Front View)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in