MARKING B33 DIODE Search Results

marking B33 diode

Abstract: SMAB33
Contextual Info: SEMICONDUCTOR SMAB33 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES ᴌLow Profile Surface Mount Package. H A ᴌFor Use in Low Voltage, High Frequency inverters, Free D ᴌLow Power Loss, High Efficiency.

marking B33 diode

Abstract: SMAB33
Contextual Info: SEMICONDUCTOR SMAB33 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. E Wheeling, and Polarity Protection Applications.

marking B32 diode SCHOTTKY

Abstract: marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

marking B33 diode

Abstract: marking thq
Contextual Info: /= T SGS-THOMSON *7#« B!»!llLi f[f3 iD gi TMMBAT 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. Matched batches are available on request. ABSOLUTE MAXIMUM RATINGS (limiting values

marking B32 diode SCHOTTKY

Abstract: marking B34 diode SCHOTTKY MBRS340T3G b34 diodes on semiconductor marking B33 diode b34 DIODE schottky marking B3X Diode 145 B34 marking B32
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

smd 5b1

Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

5B1 zener diode

Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

zener diode b27

Abstract: 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

top marking c3

Abstract: fht 100
Contextual Info: EMIF04-MMC02F1 IPAD 4 line EMI filter including ESD protection Main application • MULTIMEDIACARD™ Description The EMIF04-MMC02F1 is a highly integrated array designed to suppress EMI / RFI noise for MULTIMEDIACARD™ port filtering. The EMIF04-MMC02F1 Flip-Chip packaging

R20 marking

Abstract: AN1235 AN1751 EMIF04-MMC02 EMIF04-MMC02F2 JESD97
Contextual Info: EMIF04-MMC02F2 IPAD 4 line EMI filter including ESD protection Main product characteristics Where EMI filtering in ESD sensitive equipment is required: • Multimedia card for mobile phones, personal digital assistant, digital camera, MP3 players. Flip-Chip

R20 marking

Abstract: EMIF04-MMC02F1 JESD97 R4D11
Contextual Info: EMIF04-MMC02F1 IPAD 4 line EMI filter including ESD protection Main application • MULTIMEDIACARD™ Description The EMIF04-MMC02F1 is a highly integrated array designed to suppress EMI / RFI noise for MULTIMEDIACARD™ port filtering. The EMIF04-MMC02F1 Flip-Chip packaging

marking code onsemi Diode B34

Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

R20 marking

Abstract: AN1235 EMIF04-MMC02 EMIF04-MMC02F2 JESD97
Contextual Info: EMIF04-MMC02F2 4-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: 1.57 mm x 2.07 mm ■ Very thin package: 0.65 mm

DIODE ON SEMICONDUCTOR B34

Abstract: marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS320T3 MBRS330T3 MBRS340T3

Abstract: marking B34 diode SCHOTTKY b34 DIODE schottky MBRS340T3G diode marking b34 3B8000 DIODE ON SEMICONDUCTOR B34 marking B3X MBRS340T3G marking MBRS320T3G
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

KZ3 SOT23

Contextual Info: BZX84B2V7 - BZX84B39 350mW SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • 2% Tolerance on VZ   350mW Power Dissipation   Zener Voltages from 2.7V - 39V Case: SOT23 Case Material: Molded Plastic “Green” Molding Compound.

Zener Diode marking b27

Abstract: zener diode marking code B13 zener B13 zener diode b27
Contextual Info: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V

80-133

Abstract: BZX79-B10 SC-40 311201 SC40 BZX79-C10 spice BZX79C8V2 spice BZX79-F6V2 BZX79-A6V2 b30 do-35
Contextual Info: Philips Semiconductors - PIP - BZX79 series; Voltage regulator diodes Your browser does not support script Philips Semiconductors Home Product Buy MySemiconductors Contact catalogonline Product Information Information as of 2003-02-16 BZX79 series; Voltage regulator

Contextual Info: BZV60 SERIES _ A VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended for use as low voltage stabilizers or voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series

Contextual Info: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V • Suitable for high-density board assembly due to the use of a small

Contextual Info: Transistors UML1N Low-frequency Transistor I UML1N •Features •A bsolu te maximum ratings Ta = 25°C Tr 1 ) The 2SA1037AK and a diode are housed independently in a UM T package. Parameter Symbol Limits Unit Vceo —60 -5 0 —6 -0 .1 S V V V A Ti Tstp

C15 DO-34

Abstract: diode 400mw 4v7 b5v6 BZV60 BZV60-C
Contextual Info: BZV60 SERIES A _ VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended fo r use as low voltage stabilizers o r voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series

B20 zener diode

Abstract: zener diode b27 diode zener B16 CMZB51 B20 zener diode glass ZENER B18 zener Diode B22 zener B51 b16 zener Zener Diode marking b27
Contextual Info: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V

Contextual Info: Transistors UML2N Low-frequency Transistor I UML2N •F e a tu r e s 1 The 2SC2412K and a diode are housed independently in a UMT package. •A b s o lu te m aximum ratings Ta = 25'C) Tr Parameter Symbol Limits Unit VcBO VCEO V ebo ic V V V Pc 60 50 6 0.15