MARKING B16 DIODE Search Results
MARKING B16 DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet |
MARKING B16 DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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3B MARKINGContextual Info: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay |
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MBRA160T3 1E-02 1E-03 1E-04 1E-05 1E-06 3B MARKING | |
marking B16 diodeContextual Info: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay |
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MBRA160T3 1E-02 1E-03 1E-04 1E-05 1E-06 marking B16 diode | |
403D
Abstract: MBRA160T3
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MBRA160T3 r14525 MBRA160T3/D 403D MBRA160T3 | |
403D
Abstract: MBRA160T3 3B marking SMA MARKING 14
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MBRA160T3 r14525 MBRA160T3/D 403D MBRA160T3 3B marking SMA MARKING 14 | |
marking code onsemi Diode B16
Abstract: 403D MBRA160T3 on semiconductor B16
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MBRA160T3 r14525 MBRA160T3/D marking code onsemi Diode B16 403D MBRA160T3 on semiconductor B16 | |
MBRA160T3G
Abstract: SMA CASE 403D-02 footprint Diode SMA marking code PB MBRA160T3-D 403D MBRA160T3
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MBRA160T3 MBRA160T3/D MBRA160T3G SMA CASE 403D-02 footprint Diode SMA marking code PB MBRA160T3-D 403D MBRA160T3 | |
403D
Abstract: MBRA160T3 MBRA160T3G
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MBRA160T3 MBRA160T3/D 403D MBRA160T3 MBRA160T3G | |
Contextual Info: SEMICONDUCTOR SMAB16 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES ・Low Profile Surface Mount Package. H A D ・Low Power Loss, High Efficiency. ・For Use in Low Voltage, High Frequency inverters, Free |
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SMAB16 | |
SMAB16Contextual Info: SEMICONDUCTOR SMAB16 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. E Wheeling, and Polarity Protection Applications. |
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SMAB16 SMAB16 | |
MBRA160T3-D
Abstract: MBRA160T3G 403D MBRA160T3
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MBRA160T3 MBRA160T3/D MBRA160T3-D MBRA160T3G 403D MBRA160T3 | |
MBRA160T3GContextual Info: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay |
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MBRA160T3 MBRA160T3/D MBRA160T3G | |
Contextual Info: MBRA160T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay |
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MBRA160T3 MBRA160T3/D | |
SMAB16Contextual Info: SEMICONDUCTOR SMAB16 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES ᴌLow Profile Surface Mount Package. H A ᴌFor Use in Low Voltage, High Frequency inverters, Free D ᴌLow Power Loss, High Efficiency. |
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SMAB16 60MHz SMAB16 | |
Contextual Info: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay |
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MBRA160T3G, NRVBA160T3G MBRA160T3/D | |
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Contextual Info: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay |
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MBRA160T3G, NRVBA160T3G MBRA160T3/D | |
smd 5b1
Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
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MM3ZB39 OD-323 OD-323 smd 5b1 smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode | |
5B1 zener diode
Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
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MM3ZB39 OD-323 OD-323 5B1 zener diode 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12 | |
zener diode b27
Abstract: 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey
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MM3ZB39 OD-323 OD-323 zener diode b27 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey | |
Contextual Info: BZX84B2V4 . BZX84B47 300 mW BZX84B2V4 . BZX84B47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-01-03 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 2 1 Power dissipation – Verlustleistung |
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BZX84B2V4 BZX84B47 OT-23 O-236) UL94V-0 | |
80-133
Abstract: BZX79-B10 SC-40 311201 SC40 BZX79-C10 spice BZX79C8V2 spice BZX79-F6V2 BZX79-A6V2 b30 do-35
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BZX79 80-133 BZX79-B10 SC-40 311201 SC40 BZX79-C10 spice BZX79C8V2 spice BZX79-F6V2 BZX79-A6V2 b30 do-35 | |
Zener Diode marking b27
Abstract: zener diode marking code B13 zener B13 zener diode b27
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CMZB12 CMZB53 Zener Diode marking b27 zener diode marking code B13 zener B13 zener diode b27 | |
Contextual Info: BZV60 SERIES _ A VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended for use as low voltage stabilizers or voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series |
OCR Scan |
BZV60 DO-34 0033Tb7 | |
Contextual Info: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V • Suitable for high-density board assembly due to the use of a small |
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CMZB12 CMZB53 | |
2sc6096
Abstract: 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S
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ECSP1208-4-F 12A01M 15C01M 12A01C 15C01C 12A02CH 15C02CH 30A02CH 30C02CH 2sc6096 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S |