MARKING B14 DIODE Search Results

Contextual Info: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on

Schottky

Contextual Info: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate

Schottky

Abstract: sot-23 MARKING CODE ZA smd code marking za
Contextual Info: RB706F-40 Low VF SMD Schottky Barrier Diode Small Signal SOT-323 Features ◇ Low reverse current, high reliability ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant

zener Z6 SOT23-6

Contextual Info: BZX84C2V4 - BZX84C39 CREAT BY ART 300mW, Surface Mount Zener Diode Small Signal Product Features SOT-23 ◇ Planar die construction ◇ 300 mW power dissipation ◇ Zener voltages from : 2.4V - 39V ◇ Ideally suited for automated assembly processes Mechanical Data

marking b14 diode

Abstract: diode b14 b14 diode surface mount b14 smb diode diode schottky B14 marking code B14 diode MARKING CODE B14 marking B14
Contextual Info: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking b14 diode

Abstract: diode b14 marking code B14 diode MARKING CODE B14 b14 smb diode b14 diode surface mount
Contextual Info: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: BAV19W-G/BAV20W-G/BAV21W-G Taiwan Semiconductor CREAT BY ART Small Signal Product High Voltage Fast Switching Diode FEATURES - Fast switching device trr<50ns - Surface mount device type - Moisture sensitivity level 1 - Low reverse leakage - Pb free and RoHS compliant

Contextual Info: BAS19W/20W/21W Taiwan Semiconductor Small Signal Product SOT-323 100-250V/200mA Switching Diode FEATURES - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant - Fast Switching Speed - General purpose switching application SOT-323

SOT-323 100-250V/200mA Switching Diode

Contextual Info: BAS19W/20W/21W Taiwan Semiconductor Small Signal Product SOT-323 100-250V/200mA Switching Diode FEATURES - Fast Switching Speed - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant SOT-323 MECHANICAL DATA - Case: SOT-323 package

b14 smd diode

Contextual Info: 1N4148W-G Taiwan Semiconductor Small Signal Product High Speed SMD Switching Diode FEATURES - Fast switching device trr<4.0ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant

100E3

Abstract: marking b14 diode
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

diode schottky B14

Abstract: marking b14 diode
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

B14 ZP

Abstract: b14 smd diode diode B14 zp B14 zp diode
Contextual Info: TSZL52C2V4 - TSZL52C39 CREAT BY ART 200mW SMD Zener Diode Small Signal Product Features 1005 ◇ 200mW power dissipation ◇ High voltages form 2 - 39 V ◇ Designed for mounting on small surface ◇ Extremely thin / leadless package ◇ Pb free product Mechanical Data

Contextual Info: TESDC5V0LC Bi-directional ESD Protection Diode Small Signal Product Features SOD-323 ◇ Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) ◇ Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) ◇ Protects one Bi-directional I/O line ◇ Working Voltage : 5V

marking code onsemi Diode B14

Abstract: marking b14 diode B14 marking code 403B 403D MBRA140T3 marking b14 on semiconductor
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: BZY55B2V4 thru BZY55B36 Taiwan Semiconductor Small Signal Product 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 36V - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: BZS55B2V4 thru BZS55B36 Taiwan Semiconductor Small Signal Product 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 36V - Surface device type mounting - Matte Tin Sn lead finish with Nickel(Ni) underplate - Moisture sensitivity: level 1, per J-STD-020

marking b14 on semiconductor

Abstract: B14 diode on semiconductor 403B MBRA140T3 SMA MARKING 86 marking b14 diode b14 diode surface mount B14 SMA
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

B14 diode on semiconductor

Abstract: marking b14 on semiconductor B14 MARKING marking b14 diode marking code B14 marking code onsemi Diode B14 MBRS140T3 B14 marking code b14 diode surface mount b14 smb diode
Contextual Info: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

B14 diode on semiconductor

Abstract: marking b14 diode marking b14 on semiconductor marking code onsemi Diode B14 403D MBRA140T3 SMA MARKING 86 marking code B14 B14 marking code diode MARKING CODE B14
Contextual Info: MBRA140T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

b14 smb diode

Abstract: diode b14 MBRS140T3G marking B14 diode b14 diode surface mount AS 031 B14g smb marking code B14 5M MARKING CODE SCHOTTKY DIODE MBRS140T3
Contextual Info: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

N-Channel

Abstract: marking b14 diode B14 DIODE DIODE B14 TSM6N60CP
Contextual Info: TSM6N60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 1.25 @ VGS =10V 6 Features Block Diagram ● High power and current handing capability. ● Low RDS(ON) 1.25Ω (Max.)