MARKING B12 DIODE Search Results

marking B12 diode SCHOTTKY

Abstract: DIODE B12 smd diode code B12 B12 DIODE smd marking b12 marking B12 diode smd diode b12 diode marking code B12 TSC Date Code marking smd diode marking code g
Contextual Info: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C —Ultra smail mold type,high reliability,low IR low VF —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

marking B12 diode SCHOTTKY

Abstract: MBRS120T3 marking b12 rectifier diode B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking B12 diode SCHOTTKY

Abstract: MBRS120T3 diode marking code B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: TESDC24V Bi-directional ESD Protection Diode Small Signal Diode SOD-323 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —Protects one birectional I/O line —Working Voltage : 24V —Pb free version, RoHS compliant, and Halogen free

marking B12 diode SCHOTTKY

Abstract: b12 marking MBRS120T3 B12 DIODE marking B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

DIODE B12

Abstract: B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking erb12 general purpose diode marking code -06
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

marking B12 diode SCHOTTKY

Abstract: b12 marking MBRS120T3 DIODE B12 51 DIODE B12 B12 diode b12 diodes on semiconductor marking B12 diode
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

ERB12-02

Abstract: Diode Mark B12 h2 marking general purpose diode marking code -06 ERB12-10
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

DIODE B12

Abstract: B12 DIODE marking B12 diode N-channel 500V mosfet B12 68 diode MARKING CODE mosfet high power diode 500v TSM8N50 DIODE B12 48 n-channel 250V power mosfet dpak
Contextual Info: TSM8N50 500V N-Channel MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.85 @ VGS =10V 7.2 Features Block Diagram ● Low On-Resistance. ● High power and current handing capability.

VB11

Abstract: VA1C monitor EHT transformer 0722 456 00014 UL3239 VB11 MARKING 5 PIN Diode Mark B12 3239 TAISHO
Contextual Info: BCcomponents DATA SHEET FMP-MLT-17 Focus Metal-glaze Preset for Monitor Line Transformer 17"/19", 28 kV Objective specification Supersedes data of 21st October 1999 File under BCcomponents, BC03 2000 Jul 20 BCcomponents Objective specification Focus Metal-glaze Preset for Monitor Line

SMD MARKING CODE b24

Abstract: SMD MARKING CODE B15 bzv55c3v3 BZV55-C5V1 SOD80C BZV55A5V1 BZV55C16 PHILIPS smd code dn BZV55 ordering SMD MARKING CODE B36 SOD80c
Contextual Info: Philips Semiconductors - PIP - BZV55 series; Voltage regulator diodes Submit Que Philips Semiconductors Home ProductBuy MySemiconductors ContactProduct Information catalogonline BZV55 series; Voltage regulator diodes Information as of 2003-01-21 My.Semiconductors.COM.

mosfet to92

Abstract: mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 TSM2N7000KCT
Contextual Info: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS V 60 Features RDS(on)(Ω) ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●

DIODE B12 51

Abstract: DIODE B12 B12 DIODE ultra low igss pA mosfet DIODE B12 60 p-CHANNEL MOSFET P-Channel MOSFET code 1A P-Channel mosfet 25v sop8 mosfet marking B12 diode marking code B12
Contextual Info: TSM9434 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V RDS(on)(mΩ) ID (A) 40 @ VGS = -4.5V -6.4 60 @ VGS = -2.5V -5.1 -20 Features Block Diagram ● Advance Trench Process Technology

DIODE B12

Contextual Info: TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V 30 Features RDS(on)(mΩ) ID (A) 15 @ VGS = 10V 11 24 @ VGS = 4.5V 10 Block Diagram ●

zener diode b27

Abstract: 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

smd 5b1

Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

5B1 zener diode

Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
Contextual Info: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)

Zener B12

Abstract: diode zener zx 3.9v diode zener smd 5v1 marking code z0 5V1 SMD ZENER SMD MARKING CODE Z2 TSZU52C13 3.9V ZENER DIODE smd marking b12 TSZU52C24
Contextual Info: TSZU52C2V0 – TSZU52C39 Pb RoHS 150mW SMD Zener Diode COMPLIANCE 0603 Features — — — — — 150mW Power dissipation. High voltages from 2 ~ 39V Designed for mounting on small surface Extremely thin/leadless package Pb free product Mechanical Data — —

US1M spice

Contextual Info: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current

B12 diodeS

Contextual Info: PR1501/S - PR1505/S 1.5A FAST RECOVERY RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material: UL Flammability

EMF21-7

Abstract: EMF21
Contextual Info: EMF21 COMPLEX TRANSISTOR ARRAY Features NEW PRODUCT • • • • • Epitaxial Planar Die Construction One PNP Bipolar Transistor and One NPN Pre-Biased Transistor Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)

marking B12 diode SCHOTTKY

Abstract: MBRS120T3
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

SBRS8120T3G

Abstract: MBRS120T3G
Contextual Info: MBRS120T3G, SBRS8120T3G Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS120T3G

Abstract: MBRS120T3 CASE 403A
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay