MARKING AJ 7 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G Featrues Pb-Free Package is Available. Ordering Information Device Marking LBCX70GLT1G LBCX70GLT3G LBCX70JLT1G LBCX70JLT3G LBCX70KLT1G AG AG AJ AJ AK Shipping

BCX70G

Abstract: BCX70H BCX70J BCX70K SMD AJ aj smd npn
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ

Contextual Info: CDIIL BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = QASE

Contextual Info: BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistore Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE

BCX70G

Abstract: BCX70H BCX70J BCX70K
Contextual Info: BCX70G BCX70H BCX70J BCX70K CDU SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N Silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 i l 0.38 [I3 * I I I« 2.6 Pin configuration

Contextual Info: L BCX70G BCX70H BCX7ÓJ BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking PACKAGE O UTLINE DETAILS A LL DIM ENSIONS IN m m BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK 3.0_ 2.8 0.14 0.46 038 3 Pin configuration 1 = BASE 2 = EMITTER

Contextual Info: Transistor, NPN 2SD1782K Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1782K; AJ-fr, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB =0.5 A/50 mA • high breakdown voltage BV qeo =

BCW60

Abstract: BCX70
Contextual Info: BCW60 BCX70 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 60A AA BCW 60B AB BCW 60C AC BCX70G AG BCX70H AH BCX70J AJ 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AF AMPLIFICATION AND

marking AJ 7

Abstract: murata SAW
Contextual Info: SAW FILTER FOR SCDMA400 Rx Murata part number : SAFES405MFL0F00 Package Dimensions Specification Item 2.0±0.1 Insertion Loss 400 to 410 MHz Dot Marking(φ0.3) (0.2) 2-0.70±0.05 2-0.35±0.05 (4) 8-0.40±0.05 (C0.15) (1) (2) (3) (0.075) 8-0.325±0.050 (9) (8) (7)

C0151

Abstract: murata SAW
Contextual Info: SAW FILTER FOR SCDMA400 Rx Murata part number : SAFES405MFL0F00 Package Dimensions Specification 2.5±0.1 9 (8) (7) Item Specification -30 to +70°C 405 MHz 2.0±0.1 Nominal Center Frequency(fc) (10) (5) a J Insertion Loss (400 to 410 MHz) Dot Marking(0.3)

AYWW marking code IC

Abstract: marking AJ 7 88XXXXX
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AJ 8 1 SCALE 1:1 DATE 19 SEP 2007 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.

KA-59-185

Abstract: marking AJ 7 EAJ06
Contextual Info: DASH NO. M CODE MADE FROM STAMP; 380-10044-501 82918 7/16-28 UNEF-2B THREAD REVISIONS GSD ER 28592 AJ 01/21/87 I cn CN 29041 A CO I EAJ 06/25/87 5o cn CN 29966 A I JCA 06/29/88 o CN 32648 A WJM 10/31/90 CN 33220 C KH 08/16/91 CN 38728 E BDH 12/03/02 0.040 REF.

MIL-C-45204

Abstract: KA-59-185 EAJ06 Boeing KA-59-185-MC7
Contextual Info: DASH NO. M CODE MADE FROM STAMP: 380-10044-501 82918 7/16-28 UNEF-2B THREAD GSD R E V IS IO N S >• I cn ER 28592 AJ 01/21/87 CN 29041 A CO I EAJ oo cn 06/25/87 CN 29966 A I JCA 06/29/88 o CN 32648 A WJM 10/31/90 CN 33220 C KH 08/16/91 CN 38728 E BDH 12/03/02

MARKING aep

Contextual Info: ' t y y ÿ ' f # —K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft 1 J» >1 ■K 1 ? High reliability by planer design. • Marking 9 oi 3 W :ft5m m b'7f S KM A «TBI WiH^nW

P12O

Contextual Info: P12 Vishay Sfernice Fully Sealed Container Cermet Potentiometer Military and Professional Grade FEATURES • 1 W at 70 °C • Cermet element • Test according to CECC 41000 or IEC 60393-1 • Full sealing P12Q P12T • Mechanical strength P12O • Compliant to RoHS Directive 2002/95/EC

Contextual Info: P12 Vishay Sfernice Fully Sealed Container Cermet Potentiometer Military and Professional Grade FEATURES • 1 W at 70 °C • Cermet element • Test according to CECC 41000 or IEC 60393-1 • Full sealing P12Q P12T • Mechanical strength P12O • Compliant to RoHS Directive 2002/95/EC

P12O

Contextual Info: P12 www.vishay.com Vishay Sfernice Fully Sealed Container Cermet Potentiometer Military and Professional Grade FEATURES • 1 W at 70 °C • Cermet element • Test according to CECC 41000 or IEC 60393-1 • Full sealing P12Q P12T • Mechanical strength

P12O

Contextual Info: P12 Vishay Sfernice Fully Sealed Container Cermet Potentiometer Military and Professional Grade FEATURES • 1 W at 70 °C • Cermet element • Test according to CECC 41000 or IEC 60393-1 • Full sealing P12Q P12T • Mechanical strength P12O • Compliant to RoHS Directive 2002/95/EC

3164165

Abstract: TSOP-II-32 GPJ05855 hyb3165165 cmos dram 8m x 16 TSOPII-50 3165165AT 64M-DRAM marking AJ 7 3164805
Contextual Info: HYB 3164 5 400/5 AJ/AT -40/-50/-60 64M x 4 - Bit Dynamic RAM HYB 3164(5)800/5 AJ/AT -40/-50/-60 8M x 8 - Bit Dynamic RAM HYB 3164(5,6)160/5 AT -40/-50/-60 4M x 16 -Bit Dynamic RAM INFORMATION NOTE 64M - Bit DYNAMIC MEMORIES (Second Generation) General Information

P13L

Contextual Info: P13L Vishay Sfernice Long Life Cermet Potentiometer up to 2 Million Cycles FEATURES • 2 million cycles for bushing L and N  1 million cycles for bushing T, Q, O, and P  High power rating 1.5 W at 70 °C  Test according to CECC 41000 or IEC 60393-1

P13L

Contextual Info: P13L www.vishay.com Vishay Sfernice Long Life Cermet Potentiometer up to 2 Million Cycles FEATURES • 2 million cycles for bushing L and N • 1 million cycles for bushing T, Q, O, and P • High power rating 1.5 W at 70 °C • Test according to CECC 41000 or IEC 60393-1

P13L

Contextual Info: P13L Vishay Sfernice Long Life Cermet Potentiometer up to 2 Million Cycles FEATURES • 2 million cycles for bushing L and N  1 million cycles for bushing T, Q, O, and P  High power rating 1.5 W at 70 °C  Test according to CECC 41000 or IEC 60393-1

P13L

Contextual Info: P13L www.vishay.com Vishay Sfernice Long Life Cermet Potentiometer up to 2 Million Cycles FEATURES • 2 million cycles for bushing L and N • 1 million cycles for bushing T, Q, O, and P • High power rating 1.5 W at 70 °C • Test according to CECC 41000 or IEC 60393-1