MARKING A5 DIODE Search Results

MA6 diode

Abstract: LMBD2838LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel

MA6 diode

Abstract: LMBD2838LT1G LMBD2837LT1G rr 100 ma6 12
Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G • Pb-Free Package is available. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel LMBD2838LT1G MA6 3000/Tape&Reel LMBD2838LT3G

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAP51-02 GENERAL PURPOSE PIN DIODES SOD-323 + FEATURES y Low diode capacitance - y Low diode forward resistance MARKING: A5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes BAP51-02 GENERAL PURPOSE PIN DIODES SOD-523 + FEATURES y Low diode capacitance - y Low diode forward resistance MARKING: A5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

A5 DIODE

Abstract: DIODE a5 marking a5 diode BAP51-02 SOD523 A5
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes BAP51-02 GENERAL PURPOSE PIN DIODES SOD-523 + FEATURES y Low diode capacitance y Low diode forward resistance MARKING: A5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: MMBD2837 MMBD2838 Elektronische Bauelemente Surface Mount Switching Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES • · A High speed switching:trr=3.0ns max Low capacitance : CT =1.1 pF(typ.) L 3 MARKING: MMBD2837:A5

BAP51W-02

Contextual Info: BAP51W-02 Small Signal General Purpose PiN Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOD-523 FEATURES Low Diode Capacitance Low Diode Forward Resistance A B MARKING D A5 E F C PACKAGE INFORMATION

diode IR 100 8K

Contextual Info: BAP51-02 Small Signal General Purpose PiN Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOD-523 FEATURES Low Diode Capacitance Low Diode Forward Resistance A B MARKING D A5 E F C PACKAGE INFORMATION

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes BAP51-02 GENERAL PURPOSE PIN DIODES 62' FEATURES y Low diode capacitance y Low diode forward resistance MARKING: A5 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

all diodes ratings

Abstract: BAV74 marking a5 diode
Contextual Info: 23033=14 00007BL, 83G BAV74 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Dual diodes, common cathodes Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAV74 - A5 _3 .0_ Pin configuration 2.8 1 = ANODE 2 = ANODE 3 = CATHODE -K 0.14 0.48 0.38 3 2.6 2.4 1.02

marking a5

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes BAP51-02 GENERAL PURPOSE PIN DIODES 62' FEATURES y Low diode capacitance y Low diode forward resistance MARKING: A5 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes BAP51-02 GENERAL PURPOSE PIN DIODES 62' FEATURES y Low diode capacitance y Low diode forward resistance MARKING: A5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

A5 DIODE

Abstract: BAV74 marking a5 diode
Contextual Info: BAV74 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Dual diodes, common cathodes Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAV74- A5 _3.0_ Pin configuration 2.8 0.14 0.48 0.38 1 = ANODE 2 = ANODE 3 = CATHODE 3 2.6 2.4 1.02 0.60 0.40 2.00 1.80 ABSOLUTE MAXIMUM RATINGS per diode

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODE. BAV74 3 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 Marking BAV74 - A5 High-Speed Switching Dual Diodes, Common Cathode

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODE. BAV74 3 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 Marking BAV74 - A5 High-Speed Switching Dual Diodes, Common Cathode

DIODE a5

Contextual Info: ffl. BAV74 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Dual diodes, common cathodes Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A V 7 4 - A5 3.0 Pin configuration ~2 . 8_ 0.14 0.48 038 1 = ANODE 2 = ANODE 3 = CATHODE _L 3 0.70 0.50 § 1.4 2.6 1.2

ERD32

Abstract: A124 marking code
Contextual Info: ERD32 3A FAST RECOVERY DIODE * Features IÄ7F : Marking Super high speed switching • 1&VF Low VF A5 - 3 — K Color code : Orange Large current Abridged type • sn High reliability name ŒŒ? 5 7, Voltage class O ;r Mid Lot No. 0-, HBBiMEt ^ Lot No. division mark

LVJ DIODE

Abstract: ERC38
Contextual Info: ERC 38 ia : Outline Drawings FAST RECOVERY DIODE *1.0 I 1 28MIN — 7.5 — 28 MIN- — : Features 3J£-V ti! • X -f • S Super high speed switching. *. Marking tf Low VF in turn on A5 —3 —K: È Color code : White « iW iS High voltage by mesa design.

pcb diagram welding inverter

Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive

Si2305DS

Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V "3.5 0.071 @ VGS = –2.5 V "3 0.108 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2305DS (A5)* *Marking Code

UC320

Abstract: CIRCUIT diagram welding inverter diode K14
Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state

Si2305DS

Contextual Info: Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V "3.5 0.071 @ VGS = –2.5 V "3 0.108 @ VGS = –1.8 V "2 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2305DS (A5)* *Marking Code

BOP 286

Abstract: ATS266 BRUSHLESS DC MOTOR an 132 hall sensor
Contextual Info: ATS266 High Voltage Hall Effect Latch „ Features „ General Description - On-chip Hall plate - Operating voltage: 4V~28V - Output current: 400mA Continuous - Reverse protection diode only for chip reverse power connecting (Note) - Output protection Zener breakdown Vz=56V(Typ)