MARKING A04 C Search Results

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

Contextual Info: MMBT3904T NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A04

a04 marking

Abstract: MMM168 MCL At3
Contextual Info: FIXED ATTENUATORS 50 Ω Surface Mount 1/2W MINIATURE 1 to 20 dB, DC to 2500 MHz LAT FREQUENCY RANGE, MHz ATTENUATION dB VSWR max. MAX. INPUT CAPD POWER,W DATA 25°C :1 PRICE $ Note B C O N N E C T I O N MMM168 MMM168 MMM168 MMM168 jk jk jk jk 1.95 1.95 1.95

MCL mat 20

Abstract: MCL At3 MCL mat 3 A04 MARKING marking A04 mcl at-5 MCL mat 15 AF320
Contextual Info: FIXED ATTENUATORS 50 & 75 Ω Plug-In 1/2W, 1W 1 to 40 dB, DC to 2000 MHz AT MAT MODEL NO. FREQ. RANGE MHz ATTENUATION dB VSWR :1 Max. PRICE $ Note B C O N N E C T I O N CASE STYLE POWER W FLATNESS, Max. fL-fU Nom. L MAT-1 MAT-2 MAT-3 MAT-4 MAT-5 DC-1500

MAT-15

Abstract: MAT-6 MCL mat 3 010521 marking A04 AT-10 MCL mat 15 AT-3-75 AT-6-75 MAT-10
Contextual Info: FIXED ATTENUATORS 50 & 75 Ω Plug-In 1/2W, 1W 1 to 40 dB, DC to 2000 MHz AT MAT MODEL NO. FREQ. RANGE MHz Note B C O N N E C T I O N 0.5 0.5 0.5 0.5 0.5 A11 A11 A11 A11 A11 cr cr cr cr cr 4.45 4.45 4.45 4.45 4.45 1.7 1.7 1.7 1.7 1.7 0.5 0.5 0.5 0.5 A11 A11

on semiconductor marking code A04

Abstract: marking A04 C BFY182
Contextual Info: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz

XY 805 ic

Abstract: microwave transducer marking A04 BFY180 on semiconductor marking code A04
Contextual Info: HiRel NPN Silicon RF Transistor BFY 180 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006

marking A04

Abstract: BFY181 p 181 V Q62702F1715
Contextual Info: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz

Contextual Info: PPJA3404 30V N-Channel Enhancement Mode MOSFET Voltage 30 V SOT-23 5.6A Current Unit: inch mm Features  RDS(ON) , VGS@10V, ID@5.6A<30mΩ  RDS(ON) , VGS@4.5V, ID@3.5A<45mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.

DS8010

Abstract: 100 pin wqfn GTSD32
Contextual Info: RT8010/A 1.5MHz, 1A, High Efficiency PWM Step-Down DC/DC Converter General Description Features The RT8010/A is a high efficiency Pulse-Width-Modulated PWM step-down DC/DC converter. Capable of delivering 1A output current over a wide input voltage range from

a04 marking

Abstract: RT9702A polyswitch 500ma RT9702CB IEC801 RT9702 RT9702ACB DS9702 N33U
Contextual Info: RT9702/A Preliminary 80mΩ Ω, 500mA/1.1A High-Side Power Switches with Flag General Description The RT9702 and RT9702A are cost-effective, low voltage, single N-Channel MOSFET high-side power switches, optimized for self-powered and bus- powered Universal

B14-047-01

Abstract: 1404701 Header material C.R.S
Contextual Info: Query Result AF320 inch A B C D E F mm G H J .200 .100 .020 .070 .068 .057 .005 .020 .230 5.080 2.540 0.508 1.778 1.727 1.448 0.127 0.508 5.842 K L M N P Q R S T .065 .060 .080 .040 1.651 1.524 2.032 1.016 wt. grams. 0.04 Tolerance: .x ± .1 .xx ± .03 .xxx ± .015 inch.

A08 monolithic amplifier

Abstract: mar 11sm MAV-4 Code A08 RF Semiconductor A04 monolithic amplifier A03 monolithic amplifier MAV-11SM MAR-4SM marking a06 WW107
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +18 dBm output JFREQ. MHz MODEL NO. GAIN, dB Typical at MHz ABSOLUTE MAXIMUM RATING7 MAXIMUM DYNAMIC VSWR POWER, dBm RANGE Typ. note 5 note 1 Typ. Output Input (1 dB (no Comp.) damage)

minicircuits MAT-20

Abstract: mcl at-5
Contextual Info: F ixed A ttenuators 50 & 75 n Plug-In 1/2W, 1W Ito 40 dB DC to 200C MHz • AT MAT A'FTINUATiON MODEL NO. VSWR Nom. A M u MAT-l MAT-2 MAT-3 MAT-4 MAT-5 DC-1500 DC-1500 DC-1500 DC-1500 DC-1500 1±0.2 2±0.2 3±0.2 4±0.2 5±0.3 0.3 0.3 0.3 0.3 0.3 0.4 0.4 0.6

a04 marking

Abstract: RT9177 RT9177A
Contextual Info: RT9177/A Preliminary Ultra-Low-Noise 200mA/500mA LDO Regulator General Description The RT9177/A is a 200mA/500mA low dropout and low noise micro-power regulator suitable for portable RF applications. The output voltage accuracy is within ±2% and range from 2.4V to 3.2V in 100mV

r04-15

Contextual Info: PHE850 RoHS Compliant • EMI suppressor, class Y2, metallized polypropylene • 0.001 – 1.0 µF, 300 VAC/480 VAC, +110 °C • New, small dimensions including low profile capacitors L typical applications The capacitors are intended for use as interference suppressors in Y2 line-toearth applications.

el 7406

Abstract: ZPH1-5216
Contextual Info: CombiLyz AFI4 / AFI5 Inductive conductivity transmitter Main features „„ Range from 500 µS/cm to 1000 S/cm „„ All hygienic design „„ Built in graphical display CombiView DFON „„ Very fast temperature compensation „„ Easy and full programmable with FlexProgrammer 9701

PHE840M

Abstract: PHE840MK5100MK01R17 PHE840MK5120MK01R17 PHE840MK5150MK01R17 marking code R08 PHE840MY7100MD16
Contextual Info: PHE840M • EMI suppressor, class X2, metallized polypropylene • 0.01 – 10.0 µF, 275/280 VAC, +105°C • Small dimensions including low profile capacitors TYPICAL APPLICATIONS For worldwide use as electromagnetic interference suppressor in all X2 and

PHE840MA6100MA04R17

Abstract: PHE840MB6100MB05R MARKING B17 PHE840M PHE840MX6330MB11R17 PHE840MK5470MK04R17 rifa x2 PHE840MY7100MD16 PHE840MD7100MD20R06L2 marking A02
Contextual Info: PHE840M RoHS Compliant • EMI suppressor, class X2, metallized polypropylene • 0.01 – 10.0 µF, 275/280 VAC, +105°C • Small dimensions including low profile capacitors typical applications For worldwide use as electromagnetic interference suppressor in all X2 and

74AHC3G04

Abstract: 74AHC3G04DC 74AHC3G04DP 74AHCT3G04 74AHCT3G04DC 74AHCT3G04DP JESD22-A114E
Contextual Info: 74AHC3G04; 74AHCT3G04 Inverter Rev. 02 — 26 January 2009 Product data sheet 1. General description The 74AHC3G04; 74AHCT3G04 is a high-speed Si-gate CMOS device. The 74AHC3G04; 74AHCT3G04 provides three inverting buffers. 2. Features • Symmetrical output impedance

SST201

Abstract: J201 equivalent A04g datasheet j201 jfet marking A04 sst204 2N4338 J201 J204 SST202
Contextual Info: N-Channel JFET General Purpose Amplifier LLC J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V

Contextual Info: LT2A01 - LT2A07 2.0A RECTIFIER POWER SEMICONDUCTOR Features • • • • Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 70A Peak Plastic Material - UL Flammability Classification 94V-0 B A A C D Mechanical Data

PHE450XD4560JD13R06L2

Abstract: PHE450PF6470JF13R06L2 IEC60062 PHE450KK5100J PHE450KK5100JR05 PHE450PA5100JR05 PHE450PF7100JF16R06L2 PHE450PB5560JB12R06 PHE450TR6330JR08R06L2 PHE450TD5120JD14R06L2
Contextual Info: PHE450 RoHS Compliant • Double metallized film pulse capacitor, polypropylene dielectric • According to IEC 60384-17 Grade 1.1 • Small sizes L TYPICAL APPLICATIONS CONSTRUCTION High frequency applications with high current stress, such as deflection circuits in

MAR-6

Abstract: MAR-1 MMIC marking a01 A03 MMIC MSA0485 mar-3 mar 536 mar6118 mar 1
Contextual Info: Drop-In Monolithic Amplifiers 50Ω MAR+ SERIES DC to 2000 MHz Features • wideband, DC to 2000 MHz • high gain, up to 32.5 dB @ 100 MHz • low noise • MAR-1+, MAR-3+, MAR-4+ are equivalent to MSA-0185, MSA-0385, MSA-0485, respectively. • cascadable