MARKING A03 AMPLIFIER Search Results

A03 transistor

Abstract: microwave transducer BFY196 BFY 36 transistor
Contextual Info: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz

A03 transistor

Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
Contextual Info: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY183 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Hermetically sealed microwave package • f-r = 8 GHz, F = 2.3 dB at 2 GHz

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY 193 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • f T = 8 GHz, F = 2.3 dB at 2 GHz

A03 transistor

Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
Contextual Info: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz

A03 transistor

Abstract: BFY280
Contextual Info: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥

Contextual Info: S IE M E N S Si-MMIC-Amplifier BGA420 in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 n-G ain Block Unconditionally stable Gain |s 21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz Vd=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

A08 monolithic amplifier

Abstract: mar 11sm MAV-4 Code A08 RF Semiconductor A04 monolithic amplifier A03 monolithic amplifier MAV-11SM MAR-4SM marking a06 WW107
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +18 dBm output JFREQ. MHz MODEL NO. GAIN, dB Typical at MHz ABSOLUTE MAXIMUM RATING7 MAXIMUM DYNAMIC VSWR POWER, dBm RANGE Typ. note 5 note 1 Typ. Output Input (1 dB (no Comp.) damage)

A03 transistor

Abstract: 3V02 88-FF
Contextual Info: S IE M E N S BGA420 Si-MMIC-Amplifier in SIEGET 25-Technoiogy Preliminary Data # • • • # # Cascadable 50 Q-Gain Block Unconditionally stable Gain |s21f= 1 3 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz V d=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +17.5 dBm output J FREQ. MHz MODEL NO. GAIN, dB Typical at MHz 100 1000 2000 note 1 Min. DC THERMAL CAPD Case MAXIMUM DYNAMIC VSWR ABSOLUTE POWER, dBm RANGE Typ. MAXIMUM OPERATING RESIS-6 DATA Style

af190

Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +17.5 dBm output FREQ.J MHz GAIN (dB) Typical at MHz MODELu NO. MAXIMUM POWER (dBm) 100 1000 2000 Note 1 Min. DYNAMIC RANGE VSWR (:1) Typ. Output (1 dB Input NF IP3 Comp.) (no (dB) (dBm)

Contextual Info: S IE M E N S Si-MMIC-Amplifier BGA425 in SIEGET 25-Technology Preliminary Data # # # # # # # Multifunctional Case. 50 D. Block LNA/MIX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2 = 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD=3V,lD=9.5mA)

MAV-4

Abstract: MAV3 MAV4 MAV 2 MAV-3 monolithic amplifiers MAV11
Contextual Info: broadband plug-in and surface mount Monolithic Amplifiers 50 ohms up to 66 mW +18.2 dBm output d c to 2.5 GHz case style selection ou tlin e d r a w in g s T ab le o f C o n t e n t s X -V OFREQ MHz MODEL NO. □ □ □ Q □ □ □ K f„ GAIN, dB Typical (at MHz)

Contextual Info: RT9014/A Preliminary Ultra Low Noise 300mA Dual LDO Regulator with POR, NMOS Driver and Requiring No Bypass Capacitor General Description Features RT9014/A is a dual channel, low noise, and low dropout with the sourcing ability up to 300mA, an open drain driver

Contextual Info: 78Q8392L/A03 Low Power Ethernet Coaxial Transceiver November 2008 DESCRIPTION FEATURES The 78Q8392L/A03 Ethernet Transceiver is a replacement for the SSI/TDK/Teridian 78Q8392L/A02 coax line transmitter/receiver. Only a single resistor value change is required for

78Q8392LA03

Abstract: 78Q8392LA0328CH 78Q8392L 78Q8392L-28CH 78Q8392L-CP RR23 marking A03 MARK A03 A03 amplifier
Contextual Info: 78Q8392L/A03 Low Power Ethernet Coaxial Transceiver November 2008 DESCRIPTION FEATURES The 78Q8392L/A03 Ethernet Transceiver is a replacement for the SSI/TDK/Teridian 78Q8392L/A02 coax line transmitter/receiver. Only a single resistor value change is required for

rt8010

Abstract: DS8010 marking A03 amplifier CDRH2D14 2x2 dfn
Contextual Info: RT8010/A 1.5MHz, 1A, High Efficiency PWM Step-Down DC/DC Converter General Description Features The RT8010/A is a high-efficiency Pulse-Width-Modulated PWM step-down DC-DC converter. Capable of delivering 1A output current over a wide input voltage range from

datasheet j201 jfet

Abstract: A04g 2N4338 J201 equivalent J201 N-channel JFET marking A04 J201 J204 SST201 SST202
Contextual Info: N-Channel JFET General Purpose Amplifier CORPORATION J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V

Contextual Info: OPA703 OPA2703 OPA4703 OPA 703 OPA704 OPA 703 O PA OPA 703 OPA2704 OPA4704 7 03 SBOS180A – MARCH 2001 CMOS, Rail-to-Rail, I/O OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION ● RAIL-TO-RAIL INPUT AND OUTPUT ● WIDE SUPPLY RANGE: Single Supply: 4V to 12V

Contextual Info: N-Channel JFET General Purpose Amplifier LLC J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V

SST201

Abstract: J201 equivalent A04g datasheet j201 jfet marking A04 sst204 2N4338 J201 J204 SST202
Contextual Info: N-Channel JFET General Purpose Amplifier LLC J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V

J201 equivalent

Contextual Info: N-ChannelJFET General Purpose Amplifier calocft CO RP O R A TIO N \J J201 J204/SST201 SST204 - - FEATURES ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified • High Input Impedance • Low I g s s Gate-Source or Gate-Drain Voltage .-40V

Contextual Info: r n l A /i i / 1 WUIOOIC N-Channel JFET General Purpose Amplifier CORPORATION J201 - J204/SST201 - SST204 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • High Input Impedance • Low I g s s Gate-Source or Gate-Drain Voltage . -40V