MARKING 952 DIODE Search Results

diode ZENER 927

Abstract: diode 913b 1PMT5918B diode MARKING CODE 917 954 zener 1N5913B 1N5956B 1PMT5913B 1PMT5914B 1PMT5956B
Contextual Info: 1PMT5913Be3 thru 1PMT5956Be3 POWERMITETM 3.0 WATT Zener Diodes SCOTTSDALE DIVISION APPEARANCE DO-216 WWW . Microsemi .C OM DESCRIPTION This surface mountable 3.0 W Zener diode series in the JEDEC DO-216 package is similar in electrical features to the JEDEC registered 1N5913B

ZV950

Abstract: ZV952V2TA
Contextual Info: 950 series SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES ZV950, ZV952, ZV953, ZMDC953 Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics, low voltage operation and high Q. Low reverse current ensures very low phase

1PMT5918B

Abstract: diode ZENER 927 1PMT5913B 1PMT5914B 1PMT5915B 1PMT5916B 1PMT5917B 1PMT5919B 1PMT5956B MSC0995
Contextual Info: POWERMITE 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax: (480) 947-1503 3.0 WATT Zener Diodes 1PMT5913B thru 1PMT5956B DESCRIPTION ® In Microsemi's Powermite surface mount package, these zener diodes provide power-handling capabilities (3.0 WATTS) found in larger packages.

Contextual Info: NVA4153N, NVE4153N Small Signal MOSFET 20 V, 952 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate AEC−Q101 Qualified and PPAP Capable

zener 416

Abstract: 934b MOTOROLA 929B PLASTIC SURFACE MOUNT ZENER DIODES marking 918b ca 944B 953B b946 932 b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913BT3 through 1SMB5956BT3 3 Watt Plastic Surface Mount Silicon Zener Diodes This complete new line of 3 Watt Zener Diodes offers the following advantages. Specification Features: • A Complete Voltage Range — 3.3 to 200 Volts

SMD Transistors w04

Abstract: smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5
Contextual Info: Vishay Telefunken Marking on Packages1 view from top Cathodering unwind TO50 3 Pin and TO50 (4 Pin) SOD80 – QuadroMELF Label with information of TYPE on reel and package view from top view from top Cathodering unwind Cathodering unwind SOD80 MiniMELF Label with information of TYPE on reel and package

PLASTIC SURFACE MOUNT ZENER DIODES marking 918b

Abstract: MOTOROLA 929B TVS marking LZ ON b941 marking zk TVS 923b 930 920B Marking 913b 924b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913BT3 through 1SMB5956BT3 3 Watt Plastic Surface Mount Silicon Zener Diodes This complete new line of 3 Watt Zener Diodes offers the following advantages. Specification Features: • A Complete Voltage Range — 3.3 to 200 Volts

Contextual Info: LED HIGH POWER M13 Product Series LED HIGH POWER M13 CoB Product Series Data Sheet Created Date: 01 / 23 / 2014 Revision: 3.0, 05 / 08 / 2014 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M13 Product Series 1. Description

Lm 304 PN

Contextual Info: LED HIGH POWER M13 Product Series LED HIGH POWER M13 CoB Product Series Data Sheet Created Date: 01 / 23 / 2014 Revision: 2.4, 06 / 03 / 2014 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M13 Product Series 1. Description

AO4701

Abstract: aos Lot Code Week
Contextual Info: July 2001 AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4701 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the

S952T

Abstract: S952TR Telefunken Transistors
Contextual Info: Tem ic S952T/S952TR S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.

SSG4801

Abstract: MosFET 4801ss
Contextual Info: SSG4801 -5 A, -30 V, RDS ON 50 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and

stk0460

Abstract: STK0460F stk046 KSD-T0O005-004 stk04 16NC 1/equivalent to stk0460
Contextual Info: STK0460F Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage: BVDSS=600V Min. Low Crss : Crss=7.5pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=2.5Ω(Max.) D G Ordering Information

S952T

Abstract: S952TR
Contextual Info: S952T/S952TR MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage MOSMIC – MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications RFC C block Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.

Contextual Info: S952T/S952TR/S952TRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

Contextual Info: Tem ic S952T/S952TR Semiconductors MOSMIC for TV-Tùner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit £ Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.

Contextual Info: S952T/S952TR/S952TRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

S952T

Abstract: S952TR S952TRW
Contextual Info: S952T/S952TR/S952TRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

Contextual Info: BUK952R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: BUK9E2R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low Gate Charge Fast Switching BVDSS D2 -30V RDS ON D2 D1 D1 53m ID -5A G2 S2 SO-8 S1 G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the

Contextual Info: MA2404C1000000 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2404C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

4953gm

Abstract: AP4953GM
Contextual Info: AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 ▼ Low Gate Charge ▼ Fast Switching D2 D1 D1 BVDSS -30V RDS ON 53mΩ ID -5A G2 S2 SO-8 S1 G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the

Contextual Info: MA2504W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2504W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load