MARKING 952 DIODE Search Results

ZV950

Abstract: ZV952V2TA
Contextual Info: 950 series SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES ZV950, ZV952, ZV953, ZMDC953 Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics, low voltage operation and high Q. Low reverse current ensures very low phase

Contextual Info: NVA4153N, NVE4153N Small Signal MOSFET 20 V, 952 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate AEC−Q101 Qualified and PPAP Capable

zener 416

Abstract: 934b MOTOROLA 929B PLASTIC SURFACE MOUNT ZENER DIODES marking 918b ca 944B 953B b946 932 b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913BT3 through 1SMB5956BT3 3 Watt Plastic Surface Mount Silicon Zener Diodes This complete new line of 3 Watt Zener Diodes offers the following advantages. Specification Features: • A Complete Voltage Range — 3.3 to 200 Volts

S952T

Abstract: S952TR Telefunken Transistors
Contextual Info: Tem ic S952T/S952TR S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.

SSG4801

Abstract: MosFET 4801ss
Contextual Info: SSG4801 -5 A, -30 V, RDS ON 50 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and

S952T

Abstract: S952TR
Contextual Info: S952T/S952TR MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage MOSMIC – MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications RFC C block Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.

Contextual Info: S952T/S952TR/S952TRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

Contextual Info: Tem ic S952T/S952TR Semiconductors MOSMIC for TV-Tùner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit £ Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.

Contextual Info: S952T/S952TR/S952TRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

Contextual Info: BUK952R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: BUK9E2R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

Contextual Info: AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low Gate Charge Fast Switching BVDSS D2 -30V RDS ON D2 D1 D1 53m ID -5A G2 S2 SO-8 S1 G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the

Contextual Info: MA2404C1000000 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2404C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

4953gm

Abstract: AP4953GM
Contextual Info: AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 ▼ Low Gate Charge ▼ Fast Switching D2 D1 D1 BVDSS -30V RDS ON 53mΩ ID -5A G2 S2 SO-8 S1 G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the

IRFP150

Abstract: ir 740p 740p 441D irfp150 ir
Contextual Info: P D -9 .4 4 1 D International Ii^r Rectifier IRFP150 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: MA2404D10000000 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2404D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load

irfp150

Abstract: mosfet ir 250p
Contextual Info: International ioR Rectifier HEXFET Power MOSFET “ l,8SS,S5 0D1SMtb D3T PD-9.441D IIN R IRFP150 INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling

w13 smd transistor

Abstract: w13 smd tuner SOT343R S913T S913TR S913TRW w13 SMD smd transistor marking j5
Contextual Info: S913T/S913TR/S913TRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

Contextual Info: NTP75N06L, NTB75N06L Power MOSFET 75 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications

w13 smd transistor

Abstract: S913T S913TR S913TRW
Contextual Info: S913T/S913TR/S913TRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

w13 smd transistor

Abstract: smd w13 transistor
Contextual Info: S913T/S913TR/S913TRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

PC849 SHARP

Abstract: PC849 PC849 16 pin E64380
Contextual Info: PREPARED BY: rm \ Q rù Z iu i APPROVED BY: DATE SPEC No. S A - 8 2 5 U A A SHARP ÛM p 3 ÌJ 9 S 7 DATE ELECTRONIC COMPONENTS CROUP v31,' r<5‘ FILE No. ISSUE August 25, 1987 PACE 9 Pages REPRESENTATIVE DIVISION SHARP CORPORATION SPECIFICATION QBSEMI CONDUCTOR APPLICATION* DIV.

dc brushed motor 60v

Contextual Info: PD - 97787 StrongIRFET™ IRFH7004PbF HEXFET Power MOSFET Applications l l l l l l l l l Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

Contextual Info: FGA25S125P Shorted AnodeTM IGBT Features General Description • High soeed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability . This