MARKING 8U Search Results

MMBZ5244B

Abstract: marking 8U
Contextual Info: SEMICONDUCTOR MMBZ5244B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8U No. 1 Item Marking Device Mark 8U MMBZ5244B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

EIA-418

Contextual Info: PD- 95893 IRL3103D1SPbF • Lead-Free www.irf.com 1 04/25/06 IRL3103D1SPbF 2 www.irf.com IRl3103D1SPbF www.irf.com 3 IRL3103D1SPbF 4 www.irf.com IRl3103D1SPbF www.irf.com 5 IRL3103D1SPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information

Contextual Info: PD- 95893 IRL3103D1SPbF • Lead-Free www.irf.com 1 04/25/06 IRL3103D1SPbF 2 www.irf.com IRl3103D1SPbF www.irf.com 3 IRL3103D1SPbF 4 www.irf.com IRl3103D1SPbF www.irf.com 5 IRL3103D1SPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information

AN-994

Abstract: AN994
Contextual Info: PROVISIONAL IRFB/S/SL38N20DPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S

TMPZ5231

Abstract: MMBZ5228B marking code 8P MMBZ5227B 8B TMPZ5232B MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B MMBZ5231B
Contextual Info: CE MMBZ52-SERIES CHENYI ELECTRONICS 350mW SURFACE MOUNT ZENER DIODES Nominal Cross- Marking Zen.V1tg @Izt Dynamic Test Dynamic Test Revrese Test Imped. Current Imped. Current Current Voltage Package Reel Part No. Reference Code Ir uA Vr(V) MMBZ5226B TMPZ5226B

Marking 18A

Abstract: MARKING 8S SOT-23
Contextual Info: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp - 0.9 V Max @ F = 10 mA for all types.) Marking mA Zener Voltage Vz (±5%) Nominal!1) MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 18A 18B 18C

mH10-K

Abstract: mH15-K 10uH-K uH68-K uH22-K uH27-K mH33-K MH47-K uh15k mh39-k
Contextual Info: High Current Inductor SMD Type 3615 Series Type 3615 Series Characteristics Electrical Style Core Body Marking Inductance µH Q ±10% Min Test Freq. (MHz) Self Resonant Freq. (MHz) DC Resistance @ 20°C (Max Ohms) Direct Current @ 70°C (Max mA) uH10-K 0.10

ZENER 34b

Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

marking 81E

Abstract: TMPZ5231 Zener diode 81A marking 8C marking 8G mmbz52 MMBZ5227B 8B MMBZ5226B MMBZ5227B MMBZ5228B
Contextual Info: SURFACE MOUNT ZENER DIODES MMBZ52-SERIES 350mW Part No. Nominal Dynamic Test Dynamic Test Reverse Test Current Imped. Current Current Voltage Package Ir µA Vr(V) Reel Cross- Marking Zen.Vltg. Imped. Reference Code @ Izt @ Izt Vz(V) Zzt(Ω) @ Izk Izt(mA)

SMD INDUCTOR Marking Code

Abstract: mH10-K uH22-K 10uH-K MH47-K mH68-K K 460 uH27-K mH22-K SMD MARKING CODE 1R5
Contextual Info: High Current Inductor SMD Type 3615 Series Type 3615 Series Characteristics Electrical Style Core Body Marking Inductance µH ±10% Q Min Test Freq. (MHz) Self Resonant Freq. (MHz) DC Resistance @ 20°C (Max Ohms) Direct Current @ 70°C (Max mA) uH10-K 0.10

Zener sot marking 162

Abstract: marking 8D SOT 89 marking 81t marking 81J
Contextual Info: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232

ZENER 34b

Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

Contextual Info: DSKTJ04 Silicon N-channel Junction FET For impedance conversion in low frequency Unit: mm • Features  Low noise voltage NV and high speed stability time  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 8

MMBZ5228B

Abstract: TMPZ5234B MMBZ52 MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B TMPZ5229B TMPZ5230B MMBZ5232B
Contextual Info: JGD MMBZ52 - SERIES O SURFACE MOUNT ZENER DIODES/SOT - 23 350mW CrossReference Dynamic Test Test Nominal Dynamic Imped. Current Current Imped. Zen.Vltg. Marking / i_ + @lzk W XZx @ Izt Code a Part No. MMBZ5226B Vz V TMPZ5226B Zzt(Q ) lzt( mA) Zzk(Q) lzk( mA)

Contextual Info: RF2046 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features „ „ „ „ MARKING - C6 SI GN S „ DC to 3000MHz Operation Internally matched Input and Output 22dB Small Signal Gain 3.0dB Noise Figure

Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B

Contextual Info: RF2047 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features „ „ „ „ MARKING - C7 SI GN S „ DC to 6000MHz Operation Internally matched Input and Output 16dB Small Signal Gain +26dBm Output IP3

RF2045

Abstract: NE AND micro-X
Contextual Info: RF2045 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic GND 4 Features „ „ „ „ MARKING - C5 SI GN S „ DC to 6000MHz Operation Internally matched Input and Output 14dB Small Signal Gain +32dBm Output IP3

Contextual Info: PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF TO-220AB Package Outline Dimensions are shown in millimeters inches TO-220AB Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSA  Ã GPUÃ8P9@Ã &'( 6TT@H7G@9ÃPIÃXXÃ (Ã (& DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å

irfb52n15dpbf

Abstract: AN-994 AN994
Contextual Info: PROVISIONAL IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ

Contextual Info: ZENER DIODES SO T-2 3 /T O -2 3 6 AB ‘TMPZ’ ZENER DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C Zener Voltage Device Min. Norn. Max. Leakage Current Zener Im pedance @ >ZT Max Marking V (V) (V) (mA) (HA) (V) (£ 2 ) @ 'zr (mA) Pinning Type TMPZ5229

sot23 transistor marking y2

Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0

5251B

Abstract: CMBZ-5251B 5257B zener 35b 43B diode 5233B 5234B CMBZ-5243B marking 43b marking 8G
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.8 0.48 1 0.38 ri 3 i 2.6 1 2.4 11 0.14 _!-02_ 0.89 0.60 0.40 Marking CMBZ5230B 31B

cFeon

Abstract: EN29PL064 3FE00 cFeon EN SA10 SA11 SA12 SA13 SA14 sa15-s
Contextual Info: EN29PL064 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the