MARKING 855 SOT 23 6 LEAD Search Results
MARKING 855 SOT 23 6 LEAD Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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| 54AC20/SDA-R |
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54AC20/SDA-R - Dual marked (M38510R75003SDA) |
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MARKING 855 SOT 23 6 LEAD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BAV99LT1-DContextual Info: BAV99LT1 Preferred Device Dual Series Switching Diode Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish MAXIMUM RATINGS Each Diode Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current |
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BAV99LT1 OT-23 BAV99LT1/D BAV99LT1-D | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes LBAV99WT1G LBAV99RWT1G Features • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1. Suggested Applications |
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LBAV99WT1G LBAV99RWT1G LBAV99WT1 LBAV99LT1. LBAV99WT1 OT-323 SC-70) LBAV99RWT1 | |
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Contextual Info: ON Semiconductort Monolithic Dual Switching Diode Common Cathode BAV70LT1 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS |
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BAV70LT1 236AB) | |
BAV99LT1G
Abstract: BAV99LT1 Code sot-23 on semiconductor pdf marking a7 onsemi 035 diode SOT-23 Package onsemi BAV99LT3 BAV99LT3G SOT23 DIODE marking CODE AV On semiconductor date Code BAV99LT1G
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BAV99LT1 BAV99LT1/D BAV99LT1G BAV99LT1 Code sot-23 on semiconductor pdf marking a7 onsemi 035 diode SOT-23 Package onsemi BAV99LT3 BAV99LT3G SOT23 DIODE marking CODE AV On semiconductor date Code BAV99LT1G | |
a7 marking code sot 23
Abstract: SOT 23 A7 diode BAV99LT3G diode a7 SOT23 DIODE marking CODE AV marking A7 diode Switching diode 0.5 BAV99LT1 BAV99LT1G BAV99LT3
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BAV99LT1 BAV99LT1/D a7 marking code sot 23 SOT 23 A7 diode BAV99LT3G diode a7 SOT23 DIODE marking CODE AV marking A7 diode Switching diode 0.5 BAV99LT1 BAV99LT1G BAV99LT3 | |
SBAW56LT1G
Abstract: BAW56LT1G
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BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G, SSV1BAW56LT1G AEC-Q101 OT-23 O-236) BAW56LT1/D SBAW56LT1G BAW56LT1G | |
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Contextual Info: BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G, SSV1BAW56LT1G Dual Switching Diode Common Anode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S & SSV1 Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 |
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BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G, SSV1BAW56LT1G BAW56LT1/D | |
BAL99LT1Contextual Info: ON Semiconductort Switching Diode BAL99LT1 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc 3 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 |
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BAL99LT1 236AB) r14525 BAL99LT1/D BAL99LT1 | |
BAW56LT3Contextual Info: BAW56LT1 Preferred Device Monolithic Dual Switching Diode Common Anode MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Forward Current Peak Forward Surge Current Non−Repetitive Peak Forward Current t = 1 ms (Note 3) Symbol Value Unit VR 70 Vdc IF 200 |
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BAW56LT1 OT-23 O-236) BAW56LT1/D BAW56LT3 | |
A1.M
Abstract: BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G
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BAW56LT1 BAW56LT1/D A1.M BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G | |
SOT 23 marking code a6 diode
Abstract: BAS16LT1 BAS16LT1G BAS16LT3 BAS16LT3G SOT 23 A6 on diode marking code A6 A6 SOT-23
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BAS16LT1 BAS16LT1/D SOT 23 marking code a6 diode BAS16LT1 BAS16LT1G BAS16LT3 BAS16LT3G SOT 23 A6 on diode marking code A6 A6 SOT-23 | |
BAV99LT1GContextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318 |
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BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G BAV99LT1/D BAV99LT1G | |
BAW56LT1
Abstract: BAW56LT1G BAW56LT3 BAW56LT3G
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BAW56LT1 OT-23 O-236) BAW56LT1/D BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G | |
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Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318 |
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BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G AEC-Q101 BAV99LT1/D | |
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Contextual Info: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current http://onsemi.com |
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BAS16LT1 BAS16LT1/D | |
BAS16LT1GContextual Info: BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G AEC-Q101 BAS16LT1/D BAS16LT1G | |
BAV70LT1G
Abstract: SBAV70LT3 SBAV70LT1G
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BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G AEC-Q101 OT-23 O-236) BAV70LT1/D BAV70LT1G SBAV70LT3 SBAV70LT1G | |
BAS16LT3G
Abstract: BAS16LT1G SBAS16LT1G
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BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G AEC-Q101 BAS16LT1/D BAS16LT3G BAS16LT1G SBAS16LT1G | |
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Contextual Info: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current |
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BAS16LT1 BAS16LT1/D | |
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Contextual Info: BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G Dual Switching Diode Common Cathode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements |
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BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G BAV70LT1/D | |
BAV70LT1
Abstract: BAV70LT1G BAV70LT3 BAV70LT3G
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BAV70LT1 OT-23 O-236) 25laws BAV70LT1/D BAV70LT1 BAV70LT1G BAV70LT3 BAV70LT3G | |
SBAV99
Abstract: SBAV99LT1G SBAV99LT3G BAV99LT1G
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BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G AEC-Q101 BAV99LT1/D SBAV99 SBAV99LT1G BAV99LT1G | |
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Contextual Info: BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G BAS16LT1/D | |
AA1MContextual Info: BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G Dual Switching Diode Common Anode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236 |
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BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G AEC-Q101 BAW56LT1G SBAW56LT1G BAW56LT3G BAW56LT1/D AA1M | |