MARKING 77 DIODE Search Results

MARKING GA

Abstract: A779 baw78c
Contextual Info: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8

bas70-04w sc70

Abstract: DIODE SMD MARKING CODE S8 sod323 diode marking code 74 sot23 marking jsp MARKING SOT23 .215 .235 BAS70 sot23 1PS79SB70 BAS70 BAS70-04W BAS70-05
Contextual Info: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 08 — 4 May 2006 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview

Schottky Diode Marking sc-70

Abstract: 1PS76SB70 1PS79SB70 BAS70 BAS70-04 BAS70-04W BAS70-05 BAS70-05W BAS70H BAS70L
Contextual Info: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 08 — 4 May 2006 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview

Contextual Info: Super Fast Recovery Diode Diode Module Wtm D240LC40 OUTLINE 400V 240A Feature • H igh lo Rating • trr=150ns • trr= 150ns • S jc f f 'J V c r U • S m a ll B\c Main Use • S e m ic o n d u c to r P ro c e s s M a c h in e • H igh p o w e r s o u rc e

1SS360

Contextual Info: TOSHIBA 1SS360 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS360 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • 1.6± 0.2 Small Package Low Forward Voltage : Vjn = 0.92V Typ. Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance

KDS196

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDS196 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SOT-23. : V f =0.9V Typ. . : trr=1.6ns(Typ.).

smd diode marking 77

Abstract: smd diode "marking 77" marking 77 BAS70-07 Schottky diode low voltage smd marking ms diode smd 410
Contextual Info: Diodes SMD Type Schottky Barrier Double Diodes BAS70-07 Unit: mm Features Low forward voltage High breakdown voltage Guard ring protected Small plastic SMD package Low diode capacitance. Absolute Maximum Ratings Ta = 25 MAX Unit continuous reverse voltage

diode MARKING A9

Abstract: smd diode a9 DIODE SMD A9 smd diode marking 77 marking a9 transistor marking A9 A9 transistor SMD smd diode marking A9 marking 77 diode diode A9
Contextual Info: Diodes SMD Type Silicon PIN diode BAP70-03 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features High voltage, current controlled RF resistor forattenuators +0.1 2.6-0.1 1.0max Low diode capacitance Very low series inductance.

Contextual Info: Product specification BAP70-03 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features High voltage, current controlled RF resistor forattenuators +0.1 2.6-0.1 1.0max Low diode capacitance Very low series inductance. 0.375 +0.05

Contextual Info: Diodes SMD Type Product specification BAP70-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High voltage, current controlled RF resistor for attenuators +0.1 1.6-0.1 Low diode capacitance 0.77max +0.05 0.1-0.02 0.07max

DIODE marking S4 77

Abstract: smd diode marking 77 marking s4 resistor DIODE S4 77 diode S4 SMD smd marking rd BAP70-02 DIODE marking S4 marking 77 diode MARKING 54 "Pin Diode"
Contextual Info: Diodes SMD Type Silicon PIN diode BAP70-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High voltage, current controlled RF resistor for attenuators +0.1 1.6-0.1 Low diode capacitance 0.77max +0.05 0.1-0.02 0.07max

c5v1p

Abstract: M7 DIODE POLARITY MARKING 02a marking bidirectional diode marking code m7 f6 top marking code F9 BZD27C5V6P marking code M7 diode BZD27C150P
Contextual Info: BZD27C Series Voltage Regulator Diodes BREAKDOWN VOLTAGE : 7 - 188 VOLTS PEAK PULSE POWER : 150 WATTS SOD-123FL Features ◇ ◇ Low leakage current Excellent stability ◇ High temperature soldering guaranteed: 1.0±0.2 Zener and surge current specification

Contextual Info: BL GALAXY ELECTRICAL BZD27C-SERIES BREAKDOWN VOLTAGE : 7 - 188 VOLTS VOLTAGE REGULATOR DIODES FEATURES ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. PEAK PULSE POWER : 150 WATTS SOD-123FL Cathode Band Top View 1.9± 0.1 1.0±0.2

m7 diode BL GALAXY

Abstract: c5v1p BZD27-C4V7P BZD27C-SERIES M7 DIODE POLARITY MARKING C6V8P BZD27C160P 02a marking bidirectional diode marking code m7 f6 BZD27-C6V2P
Contextual Info: BL GALAXY ELECTRICAL BZD27C-SERIES BREAKDOWN VOLTAGE : 7 - 188 VOLTS VOLTAGE REGULATOR DIODES FEATURES ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. PEAK PULSE POWER : 150 WATTS SOD-123FL ◇ Zener and surge current specification

P131A

Abstract: P01C diode P131C P61c p17c P1101SCLRP P61a TIA-968-A EIA 481 D P1101SA
Contextual Info: SIDACtor Protection Thyristors SLIC Protection Fixed Voltage Series - DO-214 Description The series provides single line protection using a fixed voltage switching device for negative surges. All positive surges are routed through an internal diode to a ground

HFA25PB60

Abstract: IRFP250
Contextual Info: PD -2.338 HFA25PB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. •

Contextual Info: BZD27C SERIES Taiwan Semiconductor CREAT BY ART FEATURES Voltage Regulator Diodes - Silicon zener diodes - Low profile surface-mount package - Zener and surge current specification - Low leakage current - Excellent stability - AEC-Q101 qualified Green compound not involved

marking ld3

Abstract: DIODE marking ED BAT54 BAT54A BAT54C BAT54S marking kv3 surface mount marking bg vr 1
Contextual Info: Surface Mount Schottky Barrier Diode BAT54 / BAT54A / BAT54C / BAT54S Features A Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Mechanical Data 1 3 To p Vie w V Case: Molded Plastic Terminals: Solderable per MIL-STD-202,

S8U60

Contextual Info: SBR8U60P5Q 8A SBR SUPER BARRIER RECTIFIER POWERDI® Green NEW PRODUCT Product Summary VRRM V IO (A) 60 8 Features and Benefits VF max (V) @+25°C 0.53 •  IR max (µA) @ +25°C 0.33 capability than Schottky diodes ensuring more rugged and  Description and Applications

Contextual Info: BBY55. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread • Pb-free RoHS compliant package

MARKING CT10

Contextual Info: BBY55. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY55-02V BBY55-02W

Contextual Info: BAV21WSF SURFACE MOUNT Small Outline Flat Lead Plastic Package High Voltage Switching Diode REVERSE VOLTAGE – 250 Volts FORWARD CURRENT – 0.2 Ampere FEATURES • Moisture Sensitivity Level 1 • Flat Lead SOD-323F Small Outline Plastic Package • Surface device type mounting

marking JC diode

Abstract: D240LC40 diode marking code 77 DIODE M4 marking
Contextual Info: Super Fast Recovery Diode Diode Module • ¿ m il OUTLINE D240LC40 400V 240A Feature • S j c f iV l'il' • High lo Rating • trr=150ns • Small 0jc • FA • Semiconductor Process Machine • High power source • Factory Automation • trr=150ns Main Use