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    MARKING 720 SOT23 Search Results

    MARKING 720 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BAV99
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.215 A, SOT23 Datasheet
    TBAV70
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    TBAW56
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    TBAS16
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    BAV70
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.215 A, SOT23 Datasheet

    MARKING 720 SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING 720 SOT23

    Abstract: 1n914 surface mount diode 720 SOT23
    Contextual Info: MCC SWITCHING DIODES OPERATING/STORAGE TEMPERATURE RANGE: -55°C TO 125°C Peak MCC Reverse Maximum Reverse Maximum Forward Part Number Voltage Voltage Drop Current Current @ 25°C PRV V V mA Junction Capacitance VR =4.0V, f=1MHz Cj Max. pF 1.00 1.00 1.00


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    500mW DO-35 1N914 1N914A 1N914B DL914 350mW OT-23 MMBD914 MARKING 720 SOT23 1n914 surface mount diode 720 SOT23 PDF

    A814AY-101K

    Abstract: D10F D52FU D73C D75C TK65418 TK65430 TK65433 TK654XX IC-260-TK654xx
    Contextual Info: ADVANCED INFORMATION ADVANCED INFORMATION FEATURES STEP-DOWN CONVERTER WITH BATTERY MONITOR APPLICATIONS • Minimum External Component Count 1 coil, 1 cap ■ Miniature 6 Pin SOT23L-6 Surface Mount Package ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ TK654xx


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    OT23L-6 TK654xx TK654xx IC-260-TK654xx 0899O0 A814AY-101K D10F D52FU D73C D75C TK65418 TK65430 TK65433 IC-260-TK654xx PDF

    smd marking a7

    Abstract: marking a7 SMD a7 Transistor smd diode a7 A CLIPPER CIRCUIT APPLICATIONS smd transistor marking a7 smd a7 smd transistor A7 smd DIODes A7 1SS222
    Contextual Info: Diodes SMD Type SILICON SWITCHING DIODE 1SS222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High speed switching: trr = 3.0 ns MAX. 0.55 Low capacitance:Ct = 4.0 pF MAX. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1


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    1SS222 OT-23 15rent smd marking a7 marking a7 SMD a7 Transistor smd diode a7 A CLIPPER CIRCUIT APPLICATIONS smd transistor marking a7 smd a7 smd transistor A7 smd DIODes A7 1SS222 PDF

    Contextual Info: Product specification 1SS220 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High speed switching: trr = 3.0 ns MAX. 0.55 Low capacitance:Ct = 4.0 pF MAX. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


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    1SS220 OT-23 PDF

    MARKING A7

    Abstract: smd marking a7 SMD a7 Transistor smd a7 smd transistor A7 smd diode a7 A CLIPPER CIRCUIT APPLICATIONS 1SS223 marking 38 smd diode marking A7 SOT-23
    Contextual Info: Diodes SMD Type SILICON SWITCHING DIODE 1SS223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High speed switching: trr = 3.0 ns MAX. 0.55 Low capacitance:Ct = 4.0 pF MAX. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1


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    1SS223 OT-23 MARKING A7 smd marking a7 SMD a7 Transistor smd a7 smd transistor A7 smd diode a7 A CLIPPER CIRCUIT APPLICATIONS 1SS223 marking 38 smd diode marking A7 SOT-23 PDF

    Contextual Info: Product specification 1SS223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High speed switching: trr = 3.0 ns MAX. 0.55 Low capacitance:Ct = 4.0 pF MAX. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


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    1SS223 OT-23 PDF

    SMD DIODE A13

    Abstract: smd transistor A13 A13 smd SMD DIODE A13 DATASHEET marking a13 A CLIPPER CIRCUIT APPLICATIONS 1SS220
    Contextual Info: Diodes SMD Type SILICON SWITCHING DIODE 1SS220 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High speed switching: trr = 3.0 ns MAX. 0.55 Low capacitance:Ct = 4.0 pF MAX. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1


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    1SS220 OT-23 SMD DIODE A13 smd transistor A13 A13 smd SMD DIODE A13 DATASHEET marking a13 A CLIPPER CIRCUIT APPLICATIONS 1SS220 PDF

    Contextual Info: Product specification 1SS221 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High speed switching: trr = 3.0 ns MAX. 0.55 Low capacitance:Ct = 4.0 pF MAX. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


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    1SS221 OT-23 PDF

    MARKING 720 SOT23

    Abstract: smd transistor marking A14 A14 marking SOT MARKING A14 1SS221
    Contextual Info: Diodes SMD Type SILICON SWITCHING DIODE 1SS221 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High speed switching: trr = 3.0 ns MAX. 0.55 Low capacitance:Ct = 4.0 pF MAX. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1


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    1SS221 OT-23 MARKING 720 SOT23 smd transistor marking A14 A14 marking SOT MARKING A14 1SS221 PDF

    Contextual Info: Product specification 1SS222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High speed switching: trr = 3.0 ns MAX. 0.55 Low capacitance:Ct = 4.0 pF MAX. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


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    1SS222 OT-23 PDF

    1N4448WS-V

    Abstract: 1N4448 1N4448WS-V-GS18 DO35 IMBD4448-V LL4448
    Contextual Info: 1N4448WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO35 case e3 with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type


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    1N4448WS-V 1N4448, LL4448, IMBD4448-V 2002/95/EC 2002/96/EC OD323 GS18/10 GS08/3 1N4448WS-V 1N4448 1N4448WS-V-GS18 DO35 IMBD4448-V LL4448 PDF

    1N4448WS-V-GS08

    Abstract: 1N4448 1N4448WS-V 1N4448WS-V-GS18 DO35 IMBD4448-V LL4448 1N4448WS
    Contextual Info: 1N4448WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO35 case e3 with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type


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    1N4448WS-V 1N4448, LL4448, IMBD4448-V 2002/95/EC 2002/96/EC OD323 GS18/10 GS08/3 1N4448WS-V-GS08 1N4448 1N4448WS-V 1N4448WS-V-GS18 DO35 IMBD4448-V LL4448 1N4448WS PDF

    Contextual Info: Transistors IC SMD Type Product specification BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


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    BCW89 OT-23 PDF

    transistor 720 smd

    Abstract: FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot
    Contextual Info: Transistors IC SMD Type Switching Transistor FMMT720 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 IC CONT 2.5A. 1 0.55 625mW power dissipation. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 IC up to 10A peak pulse current. +0.05 0.1-0.01


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    FMMT720 OT-23 625mW -50mA -100mA -75mA -10mA, -50mA 100MHz -20mA transistor 720 smd FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot PDF

    ic 810

    Abstract: IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89
    Contextual Info: Transistors IC SMD Type PNP General Purpose Transistors BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


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    BCW89 OT-23 ic 810 IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89 PDF

    Contextual Info: Transistors IC ransistor SMD Type Product specification FMMT720 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 IC CONT 2.5A. 1 0.55 625mW power dissipation. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 IC up to 10A peak pulse current. +0.05


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    FMMT720 OT-23 625mW -75mA -10mA, -50mA 100MHz -20mA PDF

    DIODE 4004

    Abstract: diode 4007 Q62702-D980 diode marking 515 44S DIODE Q62702-D339 Q62702-D978 Q62702-D979 MARKING 720 SOT23 4004 diode
    Contextual Info: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    Q62702-D339 OT-23 Q62702-D980 Q62702-D979 Q62702-D978 DIODE 4004 diode 4007 Q62702-D980 diode marking 515 44S DIODE Q62702-D339 Q62702-D978 Q62702-D979 MARKING 720 SOT23 4004 diode PDF

    DIODE 4004

    Abstract: Q62702-D980 D1314 d339 transistor marking 47s Q62702-D339 Q62702-D978 Q62702-D979 44S marking code 45s MARKING CODE
    Contextual Info: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    Q62702-D339 OT-23 Q62702-D980 Q62702-D979 Q62702-D978 DIODE 4004 Q62702-D980 D1314 d339 transistor marking 47s Q62702-D339 Q62702-D978 Q62702-D979 44S marking code 45s MARKING CODE PDF

    aaf marking sot23-5

    Contextual Info: BAS 40 Silicon Schottky Diodes 32E D • aa3b32Q QQlbSlG 2 ISIP SIEMENS/ SPCLi SEMICONDS • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing £ - available with C ECC quality assessment


    OCR Scan
    aa3b32Q OT-23 62702-D 10kHz 23b35Q T-03-09 aaf marking sot23-5 PDF

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


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    3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor PDF

    Contextual Info: BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications


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    BC846A BC848C BC856-BC858) OT-23 OT-23, MIL-STD-202, BC846B BC847A BC847B PDF

    Contextual Info: BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications


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    BC846A BC848C BC856-BC858) OT-23 OT-23, MIL-STD-202, BC846B BC847A BC847B PDF

    A 1504

    Abstract: A14 marking SOT 1505 marking MMBD1503 TA 1504 MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505
    Contextual Info: MMBD1501/A / 1503/A / 1504/A / 1505/A 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 1 1 2 1503 2 3 3 1504 A11 A13 A14 A15 3 1 1505 2 High Conductance Low Leakage Diode


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    MMBD1501/A 1503/A 1504/A 1505/A OT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 MMBD1501A A 1504 A14 marking SOT 1505 marking MMBD1503 TA 1504 MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 PDF

    Contextual Info: Connection Diagrams 3 3 1501 11 1 2 1 1504 3 2 1 MMBD1501 MMBD1503 MMBD1504 MMBD1505 SOT-23 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A A11 A13 A14 A15 1 3 3 1503 2NC 1 2 3 1505 2 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    MMBD1501 MMBD1503 MMBD1504 MMBD1505 OT-23 MMBD1501A MMBD1503A MMBD1504A MMBD1505A 15lopment. PDF