MARKING 7 SOT Search Results

BC846UF

Abstract: BC856UF
Contextual Info: 7 BC846UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=55V • Complementary pair with BC856UF Ordering Information Type NO. Marking BC846UF Package Code SOT-323F

BC848F

Abstract: BC858F
Contextual Info: 7 BC848F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SA SOT-23F

BC846U

Abstract: BC856U
Contextual Info: 7 BC846U Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=55V • Complementary pair with BC856U Ordering Information Type NO. Marking BC846U Package Code AS SOT-323

BC848UF

Abstract: BC858UF
Contextual Info: 7 BC848UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858UF Ordering Information Type NO. Marking BC848UF BS Package Code SOT-323F

BC848UF

Abstract: Transistor BC858UF
Contextual Info: 7 BC848UF Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858UF Ordering Information Type NO. Marking BC848UF BS Package Code SOT-323F

3BS transistor

Abstract: S0642
Contextual Info: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER

A 798 transistor

Abstract: SOT89 MARKING CODE B1 MARKING G3 Transistor 2W marking
Contextual Info: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

FJC690

Abstract: FJC790
Contextual Info: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

s02907

Contextual Info: r z T SGS-THOMSON Ä 7# MoramiCTiMffloiei S02907 S02907A SMALL SIGNAL PNP TRANSISTORS Type Marking S02907 P05 S O 2907A P03 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION

Si2320DS

Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

S02222A

Abstract: S02222
Contextual Info: SO2222 S02222A r z 7 SGS-THOM SON Ä T # KfilOeilSILIOTIfi! «! SMALL SIGNAL NPN TRANSISTORS Type Marking S02222 N13 S02222A N20 • SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION

TK11835

Abstract: TK11835M
Contextual Info: TK11835M TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Funct ion 4.Applications 5.Structure 6.Package Out 1ine 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment Block Diagram 11.Package Outline Dimensions/Marking 12.Cautions

MARKING WjS

Contextual Info: SIEMENS BCR 135 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor fî^lO kjQ , /^=47kQ C CHA0 7 H 4 Type Marking Ordering Code Pin Configuration BCR 135 WJs Q62702-C2257 1= B 2=E

Contextual Info: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code

sot59

Abstract: TR13
Contextual Info: Package Details - SC-59 Mechanical Drawing Lead Code: Part Marking: 2-4 Character Alpha/Numeric Code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (7-March 2005)

TOKO SOT23-3

Contextual Info: REFERENCE DATA. KV14 4 0 S P E C I F I C A T I ON T A B L E OF C O N T E N T S 1. 2. 3. 4. 5. 6. 7. PURPOSE TOKO PART NUMBER APPLICATIONS STRUCTURE PACKAGE OUTLINE PIN LAYOUT PACKAGE OUTLINE D I M E N S I O N S / MARKING 8. ABSOLUTE MAXIMUM RATINGS 9. ELECTRICAL CHARACTERISTICS

Contextual Info: REFERENCE DATA. K V 14 6 0 S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2. T O K O PART NUMBER 3. APPLICATIONS 4. STR UCT URE 5. PACKAGE OUTL I NE 6. PIN LAYOUT 7. PACKAGE O UTL I NE D I M E N S I O N S / SIGNATURE Drawn By MARKING 8. A B S O L U T E MAXIMUM RATINGS

device marking code A1

Abstract: marking A2 diode Marking code A2 MARKING CODE kl7 marking KLB BAT54ADW BAT54BRW BAT54CDW BAT54SDW BAT54TW
Contextual Info: BAT54TW /ADW /CDW /SDW /BRW NEW PRODUCT SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Features • · · · Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection SOT-363 A B C TOP VIEW

marking J3 sot23

Abstract: MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3
Contextual Info: SEMICONDUCTOR KDS2236S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking J3 No. 1 Item Marking Device Mark J3 KDS2236S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

MMBZ5241B

Contextual Info: SEMICONDUCTOR MMBZ5241B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8R No. 1 Item Marking Device Mark 8R MMBZ5241B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

MMBZ5250B

Contextual Info: SEMICONDUCTOR MMBZ5250B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 81A No. 1 Item Marking Device Mark 81A MMBZ5250B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

KDR411S

Abstract: MARKING U3
Contextual Info: SEMICONDUCTOR KDR411S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking U3 No. 1 Item Marking Device Mark U3 KDR411S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

MARKING 8F MMBZ5231B

Abstract: 8F sot23 MARK 8F 8F 7 sot23 sot23 8f 8f transistors MMBZ5231B MARK 8F SOT-23 marking 8f sot23 marking 8f
Contextual Info: SEMICONDUCTOR MMBZ5231B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8F No. 1 Item Marking Device Mark 8F MMBZ5231B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

MMBZ5246B

Contextual Info: SEMICONDUCTOR MMBZ5246B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8W No. 1 Item Marking Device Mark 8W MMBZ5246B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method