MARKING 6A SOT 23 Search Results

6A marking sot23

Abstract: BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING
Contextual Info: SEMICONDUCTOR BC817 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 6A 1 2 Item Marking Description Device Mark 6 BC817 hFE Grade A 16 A , 25(B) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method

BC817

Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H

marking 6c sot23

Abstract: BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23
Contextual Info: BC817-16LT1, BC817-25LT1, BC817-40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage

transistor 1f sot-23

Abstract: sot23 AJ motorola sot 23 marking transistor marking code SOT-23 BC817B marking 1F transistor sot-23 transistor marking code SOT-23 2F marking 1P sot-23 sot 23 transistor 2f sot transistor pinout
Contextual Info: oatrif ©® SOT 23 Microminiature Space Saving Alternatives for Discrete Devices • Packaging — M otorola standard shipping A wide variety of discrete components from method for SOT’s is in vials; additionally, in M otorola's repertoire of reliability-proven sem icon­

BC817

Abstract: 6B sot-23 MARKING 6C SOT23 BC817-40LT1 6c sot-23 BC817-40LT3G 6B SOT23 Bc817 sot-23 SOT-23 6C marking 6A SOT 23
Contextual Info: BC817−16LT1, BC817−25LT1, BC817−40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 40mΩ RDS(ON), Vgs@4.5V, Ids@6A = 30mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

MOSFET N-Channel 1a vgs 1.2v sot-23

Abstract: LN2502LT1G sot-23 Marking N25 6A MARKING marking diode 6a ln2502
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

Contextual Info: LESHAN RADIO COMPANY, LTD. LN2502LT1G S-LN2502LT1G 20V N-Channel Enhancement-Mode MOSFET VDS= 20V 3 RDS ON , Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

Contextual Info: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors BRT R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

Contextual Info: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTA114EET1 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with

MMBR2857

Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)

sot-23 MARKING CODE nm

Abstract: PJSOT36C
Contextual Info: PJSOT03~PJSOT36C SERIES STANDARD CAPACITANCE TVS ARRAY VOLTAGE 3 to 36 Volts POWER 500 Watts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .056(1.40) .103(2.60) • Available in Multiple Voltage Types Ranging from 3V to 36V • Unidirectional & Bidirectional Configurations

K 2645 transistor

Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
Contextual Info: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W

H7545

Abstract: TR BC 817-25 BCV72 BCW31 BCW32 BCX20 BSS64 SOA05 70G45 B 250 C 100 K4
Contextual Info: a 7 SCS-THOMSON M DÊKOltLiÊTnSOlifflDËi SURFACE MOUNT DEVICES GENERAL PURPOSE & INDUSTRIAL SOT 23 SOT 23 NPN GENERAL PURPOSE TRANSISTORS v CEO •c ptot hpE @ *C UJ VCBO >o Type V (mA) 50* 50* 50* 30* 30* 30* 80 80 50 50 50 30 30 30 30 30 50 50 32 60

SOt323 marking code 6X

Abstract: 6n sot-323 marking 6H SC-70
Contextual Info: MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

SBC817-40LT1G

Abstract: BC817 SBC817-40LT3G sot-23 body marking 02
Contextual Info: BC817−16LT1, BC817−25LT1, BC817−40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 V Collector − Base Voltage

SOt323 marking code 6X

Abstract: MUN5111T1 MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G
Contextual Info: MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

APM2300C

Abstract: apm2300ca
Contextual Info: APM2300CA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A , RDS ON =25mΩ (typ.) @ VGS=10V RDS(ON)=32mΩ (typ.) @ VGS=4.5V RDS(ON)=40mΩ (typ.) @ VGS=2.5V RDS(ON)=65mΩ (typ.) @ VGS=1.8V • • • Top View of SOT-23 Super High Dense Cell Design

M00X

Abstract: APM2600C APM2600 STD-020C
Contextual Info: APM2600C N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/6A, RDS ON =22mΩ(typ.) @ VGS=10V RDS(ON)=26mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6 Lead Free Available (RoHS Compliant)

LBC817-16LT1

Abstract: LBC817-16LT1G LBC817-25LT1 LBC817-25LT1G LBC817-40LT1 LBC817-40LT1G LBC* MARKING 40LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC817-16LT1 LBC817-25LT1 LBC817-40LT1 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO

Contextual Info: MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor