MARKING 68M Search Results

MC68MH360EM33K

Abstract: MC68MH360EM25K mc68mh360zp33k MC68MH360CEM25L mask rom MC68MH360EM25VL KMC68MH360CEM25L MC68MH360ZP25E SPAKMH360ZP25VL 2H84G
Contextual Info: Semiconductor Products Sector Networking and Computing Systems Group Networking and Communications System Division PCN: 68MH360 Mask Revision DESCRIPTION AND PURPOSE Effective immediately, all 68MH360 products have a change in mask number. The following marking changes will be visible on finished good devices:

marking 68m

Contextual Info: Ultra High Resistance Chip Resistors UCR Type ; UCR1/10 ! "!Construction Symbol # $ " % $ # ! % ! " Material List Alumina substrate Conductor Resistive film Over coat Side termination No marking "!Type Designation UCR1/10 100M K V Article Resistance Tolerance %

Contextual Info: SCRH62 SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS Inductance Test uH Frequency DC Resistance ( MAX) (2) (1) Saturation(3) Temperature (4)

Contextual Info: SCRH62B SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) Saturation(3) Temperature (4) Current Current (A) (A) SCRH62B-2R9 2.9

Contextual Info: SCRH62B SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) Saturation(3) Temperature (4) Current Current (A) (A) SCRH62B-2R9

Contextual Info: SCRH62 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS DC Resistance Ω MAX (2) (1) Saturation(3) Temperature (4) Current Current (A) (A)

Contextual Info: SCH114 SMD POWER INDUCTORS XXX MARKING ● Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCH114-2R5 SCH114-3R9 SCH114-4R7 SCH114-5R6 SCH114-6R8 SCH114-8R6 SCH114-100 SCH114-120

BCIHP0730

Contextual Info: SCIHP0730 SMD POWER INDUCTORS MARKING Features 1. Lowest DCR/uH in this small package size. 2. Frequency range up to 5.0MHZ. 3. -55 to +125 operating temperature. 4. Handles high transient current spikes without saturation. 5. Composite construction providing extremely low buzz noise.

Contextual Info: SCH114 SMD POWER INDUCTORS XXX MARKING Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCH114-2R5 SCH114-3R9 SCH114-4R7 SCH114-5R6 SCH114-6R8 SCH114-8R6 SCH114-100 SCH114-120 SCH114-150

Contextual Info: SCIHP0735 SMD POWER INDUCTORS MARKING Features 1. Lowest DCR/uH in this small package size. 2. Frequency range up to 5.0MHZ. 3. -55 to +125 operating temperature. 4. Handles high transient current spikes without saturation. 5. Composite construction providing extremely low buzz noise.

Contextual Info: Ultra High Resistance Chip Resistors UCR Type ; UCR1/10 Symbol Construction 4 3 1 2 3 4 5 2 5 1 Material List Alumina substrate Conductor Resistive film Over coat Side termination No marking Type Designation UCR1/10 100M K V Article Resistance Tolerance %

Contextual Info: Ultra High Resistance Chip Resistors UCR Type ; UCR1/10 Symbol 䂓Construction 㽵 㽴 㽲 㽳 㽴 㽵 㽶 㽳 㽶 㽲 Material List Alumina substrate Conductor Resistive film Over coat Side termination N o marking ‫ع‬Type Designation UCR1/10 100M K V

Contextual Info: SCRH125 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS 10 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330 390 470 560 680 820

Contextual Info: SCRH125 SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS 10 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330 390 470 560 680 820 1000

Contextual Info: SCIHP0735 SMD POWER INDUCTORS MARKING ● Features 1. Lowest DCR/uH in this small package size. 2. Frequency range up to 5.0MHZ. 3. -55℃ to +125℃ operating temperature. 4. Handles high transient current spikes without saturation. 5. Composite construction providing extremely low buzz noise.

BCIHP0730

Contextual Info: SCIHP0730 SMD POWER INDUCTORS MARKING ● Features 1. Lowest DCR/uH in this small package size. 2. Frequency range up to 5.0MHZ. 3. -55℃ to +125℃ operating temperature. 4. Handles high transient current spikes without saturation. 5. Composite construction providing extremely low buzz noise.

Contextual Info: SC32 SMD POWER INDUCTORS XXX MARKING Features 1. Open frame construction. ELECTRICAL CHARACTERISTICS 2 (1) SC32-1R0 SC32-1R4 SC32-1R8 SC32-2R2 SC32-2R7 SC32-3R3 SC32-3R9 SC32-4R7 SC32-5R6 SC32-6R8 SC32-8R2 SC32-100 SC32-120 SC32-150 SC32-180 SC32-220 SC32-270

Contextual Info: SC32 SMD POWER INDUCTORS XXX MARKING ● Features 1. Open frame construction. ELECTRICAL CHARACTERISTICS 2 (1) SC32-1R0 SC32-1R4 SC32-1R8 SC32-2R2 SC32-2R7 SC32-3R3 SC32-3R9 SC32-4R7 SC32-5R6 SC32-6R8 SC32-8R2 SC32-100 SC32-120 SC32-150 SC32-180 SC32-220

N6068L

Abstract: DMN6068LK3-13 DMN6068LK3 J-STD-020D DMN6068
Contextual Info: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 8.5A 100mΩ @ VGS= 4.5V

N6068

Abstract: DMN6068 n606
Contextual Info: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance

DMN6068

Abstract: DMN6068SE DMN6068SE-13
Contextual Info: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance

DMN6068

Abstract: N6068 DMN6068SE DMN6068SE-13 diode Marking code A2
Contextual Info: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance

DMN6068LK3

Contextual Info: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS ID RDS(on) TA = 25°C 68mΩ @ VGS = 10V 8.5A 60V 100mΩ @ VGS = 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production

DMN6068LK3

Abstract: DMN6068LK3-13 DMN6068
Contextual Info: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 8.5A 60V 100mΩ @ VGS= 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production