MARKING 59 SOT23 Search Results

marking 702 sot23

Abstract: 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23
Contextual Info: New Marking Codes SOT23 New Marking Codes SOT23 SOT23 Types from Hamburg, Hazel Grove and Nijmegen without a vendor code will be changed in their marking to a two digit product code and a one digit vendor code. The vendor code indicates the location of the assembly,

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

MMQA5V6T3 diode tvs

Abstract: 6A2 SOT-23 marking code 5A6 sot 26 5a6 zener diode sot-23 5a6 zener diode transistor sc 308 marking code 5A6 SOT323 MMQA12VT1 MMQA13VT1 MMQA18VT1
Contextual Info: MMQA Quad Common Anode Series Preferred Devices SC-59 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection http://onsemi.com This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is

5a6 zener diode

Abstract: 5a6 zener diode sot-23 MMQA5V6T3 diode tvs MMQA24VT1 318F MMQA12VT1 MMQA13VT1 MMQA15VT1 MMQA18VT1 MMQA20VT1
Contextual Info: MMQA Quad Common Anode Series Preferred Devices SC-59 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection http://onsemi.com This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is

ZXM41N0F

Abstract: ZXM41N10F
Contextual Info: ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR

BC858C

Abstract: 65 marking sot23
Contextual Info: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP Transistors. Pin Configuration: 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Dimensions : Millimetres Absolute Maximum Ratings - Symbol Collector-Emitter Voltage +VBE = 1V

Contextual Info: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage

D8541

Abstract: alternative bss123 4446 BSS123 ZXM41N0F ZXM41N10F
Contextual Info: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL Drain-source voltage Drain-gate voltage

Contextual Info: HT71XX-1 30mA Low Power LDO Features • Low power consumption · High input voltage up to 24V · Low voltage drop · Output voltage accuracy: tolerance ±3% · Low temperature coefficient · TO92, SOT89 and SOT23-5 package Applications · Battery-powered equipment

Contextual Info: ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 1.5A VCE(sat) < 80mV @ 1A RCE(sat) = 56 m⍀ PD = 350mW Complementary part number ZXTP25040DFL Description C Advanced process capability has been used to achieve high current gain

MOSFET sot23-6 QG

Abstract: MARKING TH SOT23-6 MOSFET ZXMN2B03E6 ZXMN2B03E6TA zxm* sot23-6 MOSFET sot23-6 18a marking sot23
Contextual Info: ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 0.075 @ VGS= 1.8V 4.0 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

ZXTN07012EFF

Abstract: ZXTP07012EFF ZXTP07012EFFTA
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

Contextual Info: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

HT7044A-1

Abstract: HT7027A-1 HT7039A-1 HT7050A-1 0c sot89 HT7033A-1 HT7022A-1 HT7024A-1 HT70XXA-1 marking code w2 sot23-5
Contextual Info: HT70XXA-1 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 3% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package

Contextual Info: HT1015-1 1.5V Low Power LDO Features • Low power consumption · Wide operating voltage 12V max. · Low voltage drop · TO92, SOT89 and SOT23-5 package · Low temperature coefficient Applications · Audio/Video equipment · Battery-powered equipment · Communication equipment

h1 sot23-5

Abstract: marking code NO3 5PIN no1 sot23-5 SOT23 WU marking code 10 sot23 SG3525 IC SOT89 24 ldo t1 SOT23-5 HT1015-1 sot23-5 thermal resistance
Contextual Info: HT1015-1 1.5V Low Power LDO Features • Low power consumption · Wide operating voltage 12V max. · Low voltage drop · TO92, SOT89 and SOT23-5 package · Low temperature coefficient Applications · Battery-powered equipment · Audio/Video equipment · Communication equipment

ON Semiconductor marking

Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Contextual Info: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

TRANSISTOR MARKING 1d3

Abstract: ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF
Contextual Info: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications

ZXTN08400BFF

Abstract: ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking
Contextual Info: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high

ZXTN19060CFF

Abstract: ZXTN19060CFFTA ZXTP19060CFF marking 1E4
Contextual Info: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications

ZXTP19060CFF

Abstract: ZXTN19060CFF ZXTN19060CFFTA
Contextual Info: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications

ZXTN25050DFH

Abstract: ZXTN25050DFHTA
Contextual Info: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

marking 1d2

Abstract: ZETEX GATE DRIVER ZXTN07045EFF ZXTP07040DFF ZXTP07040DFFTA
Contextual Info: ZXTP07040DFF 40V, SOT23F, PNP medium power transistor Summary; BVCEO > -40V BVECO > -3V IC cont = -3A VCE(sat) < -100mV @ 1A RCE(sat) = 67m⍀ PD = 1.5W Complementary part number ZXTN07045EFF Description C This low voltage PNP transistor has been designed for applications

PX3544

Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly