MARKING 545 DBM Search Results

vestigial sideband filter

Contextual Info: SAW Components Vestigial Sideband Filter B 545 45,75 MHz Data Sheet Metal package DIP 24-06 Standard ● M/N Features ● Vestigial sideband filter without sound ● Constant group delay ● Hermetically sealed metal package Terminals ● Gold-plated NiFeCo alloy

gaas fet marking

Contextual Info: In fineon •i c h r t l o g ifci CMH192 GaAs MMIC Target Data Sheet • High-Linearity, PCS LNA/Mixer 1C for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: - 7.0 to 0 dBm

PMA-545

Abstract: PL-299 ZVA-24 monolithic circuit layout marking A Monolithic Amplifier marking 5 Monolithic Amplifier MARKING 545 DBM N5242a TB-502 marking package 545 amplifier
Contextual Info: Low Noise, High IP3 Monolithic Amplifier 0.1-6 GHz Product Features • Single Positive Supply Voltage, 3V • Low Noise Figure, 0.8 dB typ. at 1GHz • High IP3, 36 dBm typ. 1GHz • Gain, 20dB typ. at 1 GHz • Output Power, up to +20dBm typ. • Micro-miniature size

teledyne 7107

Contextual Info: Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 545 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 545 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure and high dynamic range, and

Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 545 Series Features Description Pin Configuration • Frequency Range: 10 to 500␣MHz The 545 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure

Contextual Info: GaAs MMIC CMH 192 Target Data Sheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: – 7.0 to 0 dBm

teledyne 7107

Abstract: c 4977 transistor UTC 2003
Contextual Info: Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 545 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 545 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure and high dynamic range, and

Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.4 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System

Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Ampliier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Eficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System

Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System

Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System

Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System

Contextual Info: SAW Bandpass Filter F8364 Features CDMA applications Usable bandwidth of 25 MHz No impedance matching require for operation at 50 Ω Ceramic Surface Mounted Device Package 3.0 mm * 3.0 mm Single-ended Operation RoHS Compliant Package Dimensions 1 2 I

MICROWAVE TRANSITOR

Abstract: BFY405
Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz Outstanding G ms = 23 dB at 1.8 GHz • Hermetically sealed microwave package

transistor C 5611

Abstract: INFINEON DETAIL
Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Low Current Applications  For Oscillators up to 12 GHz  Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz  Hermetically sealed microwave package

Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Low Current Applications  For Oscillators up to 12 GHz  Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz  Hermetically sealed microwave package

RF TRANSISTOR NPN MICRO-X

Abstract: BFY405
Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

BFY405

Abstract: Micro-X marking "K" 35 micro-X Package MARKING CODE Q low noise Micro-X marking "K"
Contextual Info: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

LDS 5461

Abstract: LDS - 5461 934 562 001 KGF1146 KGF1165 KGF1305 7589
Contextual Info: OKI electronic components KGF1 1 4 6 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1146 is a two-stage small-signal UHF-band amplifier that features low current dissipa­ tion, high output power, and high isolation. The KGF1146 has the specifications guaranteed by

LDS - 5461

Contextual Info: O K I electronic components KGF1146 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1146 is a two-stage small-signal UHF-band amplifier that features low current dissipa­ tion, high output power, and high isolation. The KGF1146 has the specifications guaranteed by

Contextual Info: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

RF TRANSISTOR NPN MICRO-X

Contextual Info: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package

Contextual Info: 7 " FUJITSU MI CROELECTRONI CS 47E D • 37MT7b2 7 7 001fi3bl - 0 ? b ■FU I FUJITSU October 1990 DATA SHEET■ M3 Series D101 Piezoelectric Device Modulator, 50 MHz to 300 MHz These piezoelectric modulators feature direct oscillators (50 MHz to 300 MHz). The

Contextual Info: 2SC4197 Silicon NPN Epitaxial HITACHI Application UH F frequency converter, wide band amplifier Outline MPAK ^ 2 538 1. Emitter 2. Base 3. Collector 2SC4197 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO 25 V