MARKING 53A Search Results

chip resistor marking

Abstract: NRC06FxxxxTR 604K-Ohm marking 53d marking 34x NRC06F1273TR 511K-Ohm NRC06F21R0TR NRC06F20R5TR NRC06F2000TR
Contextual Info: NIC COMPONENTS CORP. www.nicccomp.com NRC06FxxxxTR 0603 Size Thick Film Chip Resistor Marking Guide 3-Digit Marking Codes for +/-1% F tolerance E96 Values RESISTANCE VALUE NIC P/N 3 DIGIT MARKING 10.0 Ohm NRC06F10R0TR 01X 10.2 Ohm NRC06F10R2TR 02X 10.5 Ohm

ews-series

Abstract: EWS300-24 instruction manual EWS300-24 EWS600-5 EWS1500-5 EWS600-24 instruction manual power supply ews600-24 EWS600-48 EWS1500-24 EWS600-24
Contextual Info: EWS-SERIES Single output 15W ~ 1500W Unit Type Power Supply Ⅵ Model name EWS 15-5 Nominal output voltage Name of series Output power Ⅵ Features EWS15 EWS25 EWS50 EWS100 EWS150 EWS300 EWS600 EWS1500 Low Voltage Directive 3 year warranty ⅷ marking (Low Voltage Directive)

bcb47

Abstract: BC846-BC848 BC847C 125 BC848C 33T4 BC846 BC846A BC846B BC847 BC847A
Contextual Info: 23Ô33T4 000073b 7äT • BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N -P -N transistors Marking BC846 = ID BC846A = 1A BC846B = IB B C 847= 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1J BC848B = IK BC848C = 1L PACKAGE OUTLINE DETAILS

EWS300p

Abstract: ews600p EWS300P-24 EWS300P-12 EWS300P-5 EWS600P-24 EWS300P-28 EWS600P-12 324W EWS-300P-24
Contextual Info: EWS-P -SERIES Single output 300W ~ 600W DENSE1-LAMBDA • Model name EWS 300P-5 H |-1 -r J N om inal outp ut voltage N am e o f se rie s O utp ut p o w e r ■ Features •C€ marking Low Voltage Directive • • • • • • PFHC (EN61000-3-2)

EWS300P-5

Abstract: EWS600P-24 EWS600p
Contextual Info: EWS-P -SERIES LAMBDA/k DENSEI-LAMBDA Single output 300W ~ 600W • Model name EWS 300P-5 “p | J Name of series — r Nominal output voltage Output power ■ Features • C € marking Low Voltage Directive • • • • • • PFHC (EN61000-3-2) EMI (EN55011-B, EN55022-B, VCCI-2, FCC-B)

seiko CODE date MARKING

Contextual Info: DOCUMENT NUMBER NCD-53A3-02 SZ-3A Series Single-Mode Pre-dome Zirconia FERRULE TECHNICAL SPECIFICATIONS Seiko Instruments Inc. Components Sales Dept. 8, Nakase 1-Chome Mihama-ku, Chiba-shi, Chiba-ken 261 JAPAN Telephone : 043-211-1214 -1215 Facsimile : 043-211-8035

AP9408AGH

Abstract: marking 30A
Contextual Info: AP9408AGH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 10mΩ ID G 53A S Description Advanced Power MOSFETs from APEC provide the

marking F53

Abstract: AN-994 IRFZ46N IRFZ46NL IRFZ46NS
Contextual Info: PD - 9.1305A IRFZ46NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ46NS Low-profile through-hole (IRFZ46NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.020Ω G ID = 53A

Contextual Info: AP9408AGI RoHS-compliant Product Advanced Power Electronics Corp. Fast Switching Performance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS Single Drive Requirement RDS ON Full Isolation Package ID 30V 10m 53A G S Description Advanced Power MOSFETs from APEC provide the

AP9408

Abstract: AP9408AGP
Contextual Info: AP9408AGP RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 10mΩ ID G 53A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP9408AGP RoHS-compliant Product Advanced Power Electronics Corp. Lower Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 30V 10m 53A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP9408AGH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D BVDSS 30V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G 10m 53A S Description Advanced Power MOSFETs from APEC provide the

AP9408AGI

Contextual Info: AP9408AGI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Performance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement BVDSS 30V RDS ON 10mΩ ID ▼ Full Isolation Package 53A G S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: PD - 94952A IRFZ46NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 16.5mΩ G ID = 53A‡ S Description

IRF1010

Contextual Info: PD - 94952A IRFZ46NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 16.5mΩ G ID = 53A‡ S Description

Contextual Info: PD - 94952 IRFZ46NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 16.5mΩ G ID = 53A‡

APM6004N

Abstract: APM6004 APM60
Contextual Info: APM6004NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/53A, G RDS ON =9mΩ (typ.) @ VGS=10V • • • Avalanche Rated Reliable and Rugged Top View of TO-220-FP Lead Free and Green Devices Available (RoHS Compliant) D Applications

Contextual Info: PD - 94952 IRFZ46NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 16.5mΩ G ID = 53A‡

IRFZ46N

Abstract: for IRFZ46N MOSFET IRFZ46N transistor IRFZ46N IRF1010
Contextual Info: PD-91277A IRFZ46N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 16.5mΩ G ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International

MOSFET IRFZ46N

Abstract: IRFZ46N equivalent NT 407 F datasheet for IRFZ46N transistor IRFZ46N IRFZ46N of irfz46n
Contextual Info: PD-91277 IRFZ46N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 16.5mΩ G ID = 53A S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: AP2552/ AP2553/ AP2552A/ AP2553A PRECISION ADJUSTABLE CURRENT-LIMITED POWER SWITCHES Description Pin Assignments The AP2552/53 and AP2552A/53A are single channel precision adjustable current-limited switches optimized for applications that require precision current limiting, or to provide up to 2.1A of

AP2553A

Abstract: AP2553W6 AP2552W6-7 AP2553AW6 AP2553W6-7
Contextual Info: AP2552/ AP2553/ AP2552A/ AP2553A PRECISION ADJUSTABLE CURRENT-LIMITED POWER SWITCHES Description Pin Assignments The AP2552/53and AP2552A/53A are single channel precision Top View adjustable current-limited switches optimized for the applications require precision current limiting or to provide up to 2.1A of

AP2553A

Abstract: max1907
Contextual Info: AP2552/ AP2553/ AP2552A/ AP2553A PRECISION ADJUSTABLE CURRENT-LIMITED POWER SWITCHES Description Pin Assignments The AP2552/53and AP2552A/53A are single channel precision Top View adjustable current-limited switches optimized for the applications require precision current limiting or to provide up to 2.1A of

AP2553FDCG-7

Abstract: AP2553A
Contextual Info: AP2552/ AP2553/ AP2552A/ AP2553A PRECISION ADJUSTABLE CURRENT-LIMITED POWER SWITCHES Description Pin Assignments The AP2552/53and AP2552A/53A are single channel precision Top View adjustable current-limited switches optimized for the applications require precision current limiting or to provide up to 2.1A of