MARKING 52AP Search Results

MARKING 52AP Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
5962-8950303GC		Rochester Electronics LLC	ICM7555M - Dual Marked (ICM7555MTV/883)	PDF
2952APC		Rochester Electronics LLC	AM2952 - 8-Bit Bi-Directional I/O Port	PDF
MG80C186-10/BZA		Rochester Electronics LLC	80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA)	PDF
54ACT244/B2A		Rochester Electronics LLC	54ACT244/B2A - Dual marked (5962-8776001B2A)	PDF
ICM7555MTV/883		Rochester Electronics LLC	ICM7555MTV/883 - Dual marked (5962-8950303GA)	PDF

MARKING 52AP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
52AP Abstract: 52AP 6 SOT-23 1B FDN352AP marking 52AP Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V –1.1 A, –30V RDS ON = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has	Original	FDN352AP OT-23 FDN352AP 52AP 52AP 6 SOT-23 1B marking 52AP	PDF
Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V RDS ON = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package.	Original	FDN352AP OT-23 FDN352AP	PDF
fdn352ap Abstract: 52AP notebook battery pinout smart fdn352 Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V –1.1 A, –30V RDS ON = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has	Original	FDN352AP OT-23 FDN352AP 52AP notebook battery pinout smart fdn352	PDF
52AP Abstract: marking 52AP 52AP 6 fdn352 Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate	Original	FDN352AP OT-23 52AP marking 52AP 52AP 6 fdn352	PDF