MARKING 52AP Search Results

MARKING 52AP Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2910/BQA		Rochester Electronics LLC	2910 - Microprogram Controller - Dual marked (7801701QA)	PDF
MQ80C186-12/BYA		Rochester Electronics LLC	80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA)	PDF
54L04/BDA		Rochester Electronics LLC	54L04 - Hex Inverter - Dual marked (M38510/02005BDA)	PDF
9936/BCA		Rochester Electronics LLC	9936 - Hex Inverter - Dual marked (M38510/03003BCA)	PDF
54AC86/SDA-R		Rochester Electronics LLC	54AC86/SDA-R - Dual marked (M38510R75202SDA)	PDF

MARKING 52AP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
52AP Abstract: 52AP 6 SOT-23 1B FDN352AP marking 52AP Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V –1.1 A, –30V RDS ON = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has	Original	fdn352ap ot-23 52ap 52ap 6 +2sot-23 1b marking 52ap	PDF
Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V RDS ON = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package.	Original	fdn352ap ot-23	PDF
fdn352ap Abstract: 52AP notebook battery pinout smart fdn352 Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V –1.1 A, –30V RDS ON = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has	Original	fdn352ap ot-23 52ap notebook battery pinout smart +1fdn352	PDF
52AP Abstract: marking 52AP 52AP 6 fdn352 Contextual Info: FDN352AP Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate	Original	fdn352ap ot-23 52ap marking 52ap +252ap 6 fdn352	PDF