MARKING 45S Search Results

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

MMHZ5270BPT

Abstract: GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Maximum Zener impedance Test current IZT(mA) Maximum reverse leakage current ZZT at IZT (Ω) Zzk (Ω)

Contextual Info: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • C ircuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code Marking Package^ tape and reel

45SM15A

Abstract: 45SM20A 45SM7A
Contextual Info: SURFACE MOUNT FILTER QSMF - 1000 SERIES Hy-Q International 4.5 ±0.2 1.0 ±0.2 7.5 ±0.2 1.0 ±0.2 TYP. 4.1 ±0.2 GND IN GND IN 5.0 ±0.2 MARKING 2.5 ±0.2 2.5 ±0.2 OUT 1.4 ±0.2 TYP. GND METAL OUT GND 2.2 ±0.2 TYP. CERAMIC SUGGESTED PAD LAYOUT TOP VIEW

21SH15A

Abstract: 21SH15B 21SH20A 21SH20B 21SH30A 21SH30B 21SH7A 21SH7B 45SH15A 45SH20A
Contextual Info: SURFACE MOUNT FILTER QSMF - 2000 SERIES Hy-Q International 7.0 1.0 MARKING 6.0 4.6 2.54 5.0 2.54 4.0 1.4 Metal 1.0 Ceramic 2.0 SUGGESTED PAD LAYOUT TOP VIEW 1.5 TYP. 17.5 2.0 TYP. 2.0 2.0 INFRARED RAYS REFLOW 1.75 4.0 TYP. 1.7 200 Sec (˚C) Ø21 120.0˚

MARKING 910

Abstract: 21SU15A 21SU15B 21SU20A 21SU20B 21SU30A 21SU30B 21SU7A 21SU7B 45SU15A
Contextual Info: SURFACE MOUNT FILTER QSMF - 3000 SERIES Hy-Q International 1.95 6.0 2.4 1.0 1.4 Marking 3.5 1.5 Metal Ceramic 3.0 SUGGESTED PAD LAYOUT TOP VIEW 1.5 TYP. 13.5 2.0 TYP. 1.1 2.0 2.0 INFRARED RAYS REFLOW 1.75 4.0 TYP. 1.3 200 Sec (˚C) Ø21 120.0˚ 12.0 200

pt 4515

Abstract: MMPZ5250B 52B zener MMSZ5259S MMHZ5246B marking 24b sot-23 MMCZ5248B MMPZ5248B MMDZ5235B MMGZ5242B
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Test current IZT(mA) Maximum Zener impedance ZZT at IZT (Ω) 30 30 30 30 29 28 24 23 22 19 17 11 7 7

SMC - SY5120

Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Contextual Info: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based

MOS marking 8103

Abstract: TPCA8103
Contextual Info: TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCA8103 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm 0.4±0.1 0.05 M A 5 Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| =45S (typ.)

MOS marking 8103

Contextual Info: TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCA8103 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm 0.4±0.1 0.05 M A 5 Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| =45S (typ.)

TPCA8103

Contextual Info: TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCA8103 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) • High forward transfer admittance: |Yfs| =45S (typ.)

tpca8103

Abstract: MOS marking 8103
Contextual Info: TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCA8103 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm 0.4±0.1 0.05 M A 5 Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| =45S (typ.)

Contextual Info: R&E 4555B 4556B INTERNATIONAL, INC. CMOS DUAL 2-T0-4 LINE DECODERS FEATURES ♦ Buffered Outputs ♦ Selected Output Active High 4555B or Active Low (45S6B) Expandable ♦ CONNECTION D IA G R A M (all packages) Vd d I 16 DESCRIPTION The 4555 B and 4556B are constructed

DIN 6784

Abstract: BAS140W 47S MARKING
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W !  ,   BAS40-06 BAS40-06W !

BAS140W

Abstract: BAS40 BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS140W BAS40-02L

sot323 transistor marking 44s

Abstract: transistor marking 47s BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-07 BAS140W BAS40
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 3 1 3 2 1 BAS40-05 BAS40-05W 2 BAS40-06 BAS40-06W 3

CF300

Abstract: 50B4DIN41867 CF-300 telefunken mosfet marking code g1s transistor bf 222
Contextual Info: TELEFUNKEN ELECTRONIC filC D 0029426 A E G CORP • fi^EDDTb 000535*1 81C 0 53 5 9 ~ D CF 300 IFGlQJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;

Transistor 4515

Abstract: CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA SY 180/4 TRANSISTOR BC 414 W-25 CF-300
Contextual Info: TELEFUNKEN ELECTRONIC 0029426A E G CORP Û1C D • fl^EDGTb 000535*1 4 D \ 8ÏC 0 53 59~ CF 300 IFGlGJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;

IEC62

Abstract: VRW25 VRW37 Welwyn IEC62 CODE 1 watt SMD resistors derating
Contextual Info: High Voltage Thick Film Resistors Welwyn Components VRW Series • VRW37 meets the requirements of BS / EN / IEC 60065 • High working voltage to 3.5kV in compact size • High ohmic range to 30M • High pulse load capability • Robust flameproof coating material

resistors sqp

Abstract: 1 watt SMD resistors derating IEC62
Contextual Info: High Voltage Thick Film Resistors Welwyn Components VRW Series • VRW37 meets the requirements of BS / EN / IEC 60065 • High working voltage to 3.5kV in compact size • High ohmic range to 30M • High pulse load capability • Robust flameproof coating material

an 17820 equivalent

Abstract: lot date code panasonic marking g3n ELB1A002
Contextual Info: S Ë fîS S fS -t T 1LC -05003 Issu e NO. S fi B Date Of Issue : % fî K 2005^2^240 F e b r u a r y 2 4 ,2 0 0 5 3?Si % New Classification: □ Change Q To Digj-Kev «j A f± PRODUCT SPECIFICATION FOR INFORMATION m nD n « w Product D escription m s op m Product P art N um ber

ELB2A001

Abstract: ELB2A5 lot code panasonic
Contextual Info: « fir B 2 0 0 5 ^ 2 ^ 2 4 0 Date O f Is su e : F eb ru ary 24,2005 m ft e % mm. C la s s ific a tio n : New n sen mm I—I Change L-l To Digi-Kev « a ft m m PRODUCT SPECIFICATION FOR INFORMATION m o°p £ ^ Product D escrip tion ; High Frequency Filter

Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAS140W BAS40-02L

marking g3N

Contextual Info: m m l # f Is s u e NO. * fr T 1LC- 0 5 0 0 2 : □ 2005^2^240 Date o f Issu e : F e b ru a ry 2 4 ,2 0 0 5 % ft K % m mm n C lassificatio n : T o Mew r-. I Change LJ D ig h K e v m À t t i PRODUCT SPECIFICATION FOR INFORMATION s s s ft Product D escrip tion