MARKING 43 SOT23 Search Results

BAS40

Abstract: BAS40-04 BAS40-05 BAS40-06
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 BAS40/-04/-05/-06 SCHOTTKY DIODE FEATURES z Low Forward Voltage z Fast Switching BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING：45 BAS40-04 MARKING：44

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43 • BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 BAS40/-04/-05/-06 SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage z Fast Switching BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING：45 BAS40-04 MARKING：44

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40 SERIES SOT—23 SCHOTTKY DIODE FEATURES BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage

43 MARKING

Contextual Info: SIEMENS NPN Silicon Transistors for High Voltages SMBTA 42 SMBTA 43 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92, SMBTA 93 PNP Type Marking Ordering Code (tape and reel) P in t 'onfigu ration 1

bta 92

Abstract: BTA43 smbta93 93 MARKING CODE NPN S2e bta 05
Contextual Info: SIEMENS PNP Silicon Transistors for High Voltages SM BTA 92 SM BTA 93 • High breakdown voltage • Low coflector-emitter saturation voltage • Complementary types: S M B TA 42, SM BTA 43 NPN Type Marking Ordering Code (tape and reel) Pin (Contigui ation

DTA143

Abstract: marking a5 5B marking transistor A5 transistors sot-23 5C TRANSISTOR MARKING CBO 40V CEO 25V EBO 5V transistor marking A5 a5 marking transistor 5b 5b transistor
Contextual Info: DTA1 43 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT TRANSISTORS SOT-23 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 Emitter-Base Voltage V CBO

marking code diode 04

Abstract: 46 MARKING CODE SOT23 BAS40 marking 43 MV MARKING SOT23 ATTP1 marking codes BAS40-04 BAS40-05 BAS40-06
Contextual Info: BAS40 / -04 / -05 / -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low forward voltage • Fast switching BAS40 BAS40-04 BAS40-05 3 3 3 1 2 1 2 1 BAS40-06 SOT-23 Plastic Package 3 2 1 Absolute Maximum Ratings Ta = 25 OC Parameter BAS40 Marking Code: 43

TRANSISTOR S1d

Abstract: BCW66 SMBTA92
Contextual Info: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

TK10417

Abstract: TK10417M cout
Contextual Info: TK10417 POWER AMPLIFIER FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ Speaker Driver for Portable Equipment ■ Headphone Driver ■ Toys Very Wide Operating Voltage VCC = 1.8 to 5.5 V Very Low Supply Current Very Low Standby Current Miniature Package (SOT23L-8)

TK10417

Abstract: TK10417M
Contextual Info: TK10417M POWER AMPLIFIER FEATURES APPLICATIONS ! ! ! ! ! ! ! Speaker Driver for Portable Equipment ! Headphone Driver ! Toys Very Wide Operating Voltage VCC = 1.8 to 5.5 V Very Low Supply Current Very Low Standby Current Miniature Package (SOT23L-8) Adjustable Voltage Gain (VG1 = 0 to 40 dB)

TRANSISTOR S1d

Abstract: SMBTA92
Contextual Info: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

BZM5221B

Contextual Info: BZM5221B - BZM5267B 500mW SURFACE MOUNT ZENER DIODE Features • • • • • 500mW Power Dissipation High Stability Low Noise Fits onto SOD323/SOT23 Foot Print Hemetic Package Mechanical Data • • • • • Case: MicroMELF Terminals: Solderable per MIL-STD-202,

Contextual Info: Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

smd code marking LF sot23

Abstract: smd diode marking A3 sot23
Contextual Info: Philips Semiconductors Product specification Schottky barrier double diodes BAS40 series PINNING SOT23 (see Fig. 1a) FEATURES • Low forward voltage DESCRIPTION • Guard ring protected PIN BAS40 (see Fig. 1b) BAS40-04 (see Fig. 1c) BAS40-05 (see Fig. 1d)

Contextual Info: BB804 _ y\ _ VHF VARIABLE CAPACITANCE DOUBLE DIODE The BB804 is a variable capacitance double diode in planar technology w ith common cathode in a plastic SOT23 envelope. It is intended fo r FM tuning especially fo r car radios.

C18 ph zener

Abstract: 3V3 -ZENER DIODE ph zener 6v8 ph Zener diode smd marking code C24 c10 ph zener DIODE smd 434 ZENER 2V7 smd code marking PE sot23 smd diode marking code u9 smd dual diode code 68
Contextual Info: BZB84 series Dual Zener diodes Rev. 03 — 9 June 2009 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOT23 TO-236AB small Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power

Zener diode smd marking codes

Abstract: zener 6v8 ph smd code marking PE sot23 C 6V2 PH smd diode marking code ug BZB84-B39 ph c 8v2 NXP SMD ZENER DIODE MARKING CODE BZB84-C2V4 BZB84-C3V3
Contextual Info: BZB84 series Dual Zener diodes Rev. 02 — 23 February 2009 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOT23 TO-236AB small Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power

DS30005

Abstract: 6.8 B2 zener zener diode 2.4 b2
Contextual Info: BZM55C2V4 - BZM55C75 500mW SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features 500mW Power Dissipation High Stability Low Noise Fits onto SOD323/SOT23 Foot Print Hemetic Package D B A Mechanical Data • • • • • C • • • • • Case: MicroMELF

L30ESD24VC3-2

Contextual Info: LITE-ON SEMICONDUCTOR DUAL ESD PROTECTION DIODES L30ESDxVC3-2 STAND-OFF VOLTAGE - 5~24 Volts POWER DISSIPATION - 300 WATTS GENERAL DESCRIPTION SOT23 The L30ESD5V0C3-2~L30ESD24VC3-2 are a dual voltage suppressor designed to protect components which are connected to

Contextual Info: • bbsa^si 0 0 5 4 m ? 40a hapx N AMER PHILIPS/DISCRETE BB804 b?E » VHF VARIABLE CAPACITANCE DOUBLE DIODE The BB804 is a variable capacitance double diode in planar technology with common cathode in a plastic SOT23 envelope. It is intended for FM tuning especially for car radios.

L30ESD24VC3-2

Abstract: smd diode marking e5
Contextual Info: LITE-ON SEMICONDUCTOR DUAL ESD PROTECTION DIODES L30ESDxxxC3-2 STAND-OFF VOLTAGE - 5 ~24 Volts POWER DISSIPATION - 300 WATTS GENERAL DESCRIPTION SOT23 The L30ESD5V0C3-2~L30ESD24VC3-2 are a dual voltage suppressor designed to protect components which are connected to

BZX84C-V

Abstract: DZ23C4V7-V marking v6 zener diode DZ23C3V0-V DZ23C5V1-V marking code V6 95 DIODE
Contextual Info: DZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are available in other case styles and configurations including: the dual diode common anode configuration e3 with type designation AZ23, the single diode SOT23 case with the type designation

ZXTN25020DFH

Abstract: ZXTN25020DFHTA ZXTP25020DFH
Contextual Info: ZXTN25020DFH 20V SOT23 NPN medium power transistor Summary BVCEX > 100V; BV BR CEO > 20V BVECO > 5V; IC(CONT) = 4.5A RCE(sat) = 28 m⍀ typical VCE(sat) < 43 mV @ 1A; PD = 1.25W Complementary part number ZXTP25020DFH Description C Advanced process capability and package design have been used to