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    MARKING 3U 3T DIODE Search Results

    MARKING 3U 3T DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    MARKING 3U 3T DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking 3U 3T 3C diode

    Abstract: marking 3U 3T diode
    Contextual Info: BZT585B2V4T - BZT585B43T SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • ±2.0% Tolerance on Breakdown Voltage • • Small, Low Profile Surface Mount Package • • Flat Lead Package Design for Low Profile and High Power Case: SOD523 Case Material: Molded Plastic, "Green" Molding Compound.


    Original     		BZT585B2V4T BZT585B43T OD523 J-STD-020 AEC-Q101 DS36638 marking 3U 3T 3C diode marking 3U 3T diode PDF

    marking 3U 3T diode

    Contextual Info: DSK3J02 Silicon N-channel Junction FET For impedance conversion in low frequency • Features  Package  Low noise voltage NV  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Code SSSMini3-F2-B


    Original     		DSK3J02 marking 3U 3T diode PDF

    DSK3J02

    Abstract: marking 3U 3T diode transistor code book
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSK3J02 Silicon N-channel Junction FET For impedance conversion in low frequency • Features  Package  Low noise voltage NV  Contributes to miniaturization of sets, reduction of component count.


    Original     		2002/95/EC) DSK3J02 DSK3J02 marking 3U 3T diode transistor code book PDF

    marking 3U 3T diode

    Contextual Info: Doc No. TT4-EA-13151 Revision. 2 Product Standards Junction FETs DSK3J020L DSK3J020L Silicon N-channel Junciton FET Unit: mm 1.2 For impedance conversion in low frequency 0.3 0.13 3 • Features 0.8 1.2  Low Noise  Halogen-free / RoHS compliant


    Original     		TT4-EA-13151 DSK3J02ï UL-94 marking 3U 3T diode PDF

    2SK608

    Abstract: D717Y 2SC4894 2sk1216 C3967 2SC3967 2sk316 MA151WK 2sk123 2sc4238
    Contextual Info: Mini Type 3-pin Package ì~ m (3 Transistors, Diodes • $ i m 5 - ä Ü ( 3 ä * :f - ) A - y ' i r - v l i . 7 ^ - v T \ / * y 4- - • jJ W t t i ;:* * * 8 mmx - 'J 'ä a S iÄ S W ^ 'J * - fc « 2 H Ô U 4 f f i H R • U nit ! aim V T t K ^ trÆ > h S të Ü


    OCR Scan     		A721W MA3000- 2SK608 D717Y 2SC4894 2sk1216 C3967 2SC3967 2sk316 MA151WK 2sk123 2sc4238 PDF

    marking 3U 3T 3C diode

    Abstract: marking 3U 3T 3C diode 3E 3G smd marking code 3Z smd diode marking codes 3t zener diode SMD marking code 27 4B marking 3U 3T diode smd zener diode code 4d NXP SMD ZENER DIODE MARKING CODE nxp Standard Marking 3w zener diode smd marking 4d
    Contextual Info: SO D3 23F TDZxJ series Single Zener diodes Rev. 2 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits


    Original     		OD323F SC-90) AEC-Q101 marking 3U 3T 3C diode marking 3U 3T 3C diode 3E 3G smd marking code 3Z smd diode marking codes 3t zener diode SMD marking code 27 4B marking 3U 3T diode smd zener diode code 4d NXP SMD ZENER DIODE MARKING CODE nxp Standard Marking 3w zener diode smd marking 4d PDF

    GVT71128DA36

    Abstract: GVT71256DA18
    Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. GVT71128DA36/GVT71256DA18 128K X 36/256K X 18 SYNCHRONOUS SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 36 SRAM 256K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		GVT71128DA36/GVT71256DA18 36/256K GVT71128DA36 GVT71256DA18 072x36 144x18 71128DA36 71256DA18 PDF

    diamond sx 600

    Abstract: Q65110A8176 Q65110A1954 LA E6SF Q65110A8177 LRTBGFTG Q65110A9038 LW QH8G-Q2S2-3K5L-1 Q65110A2395 pointled
    Contextual Info: Light Emitting Diodes 11 Light Emitting Diodes . 11 Safety Instructions . 13


    Original     		PDF

    marking 3U 3T 3C diode 3E 3G

    Abstract: marking 3U 3T 3C diode marking 3U 3T diode GALVANTECH marking 2U 58 diode GVT7164T18
    Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. SYNCHRONOUS CACHE TAG SRAM PIPELINED OUTPUT GVT7164T18 64K X 18 SYNCHRONOUS TAG SRAM 64K x 18 SRAM +3.3V SUPPLY WITH CLOCKED REGISTERED INPUTS FEATURES GENERAL DESCRIPTION • • • • • • • • • • • •


    Original     		GVT7164T18 GVT7164T18 18-bit 7164T18 access/10ns access/12ns access/13 marking 3U 3T 3C diode 3E 3G marking 3U 3T 3C diode marking 3U 3T diode GALVANTECH marking 2U 58 diode PDF

    GVT71256D36

    Abstract: GVT71512D18 3G MARKING
    Contextual Info: GALVANTECH, INC. GVT71256D36/GVT71512D18 256K X 36/512K X 18 SYNCHRONOUS SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 2.5ns, 3.0ns, and 3.5ns Fast clock speed: 225, 200, 166, and 150MHz


    Original     		GVT71256D36/GVT71512D18 36/512K 150MHz 71512D18 GVT71256D36 GVT71512D18 3G MARKING PDF

    GVT71256C36

    Abstract: GVT71512C18 4h35
    Contextual Info: GALVANTECH, INC. GVT71256C36/GVT71512C18 256K X 36/512K X 18 SYNCHRONOUS SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 2.5ns, 3.0ns, and 3.5ns Fast clock speed: 225, 200, 166, and 150MHz


    Original     		GVT71256C36/GVT71512C18 36/512K 150MHz 71256C36 71512C18 GVT71256C36 GVT71512C18 4h35 PDF

    marking 3U 3T 3C diode 3E 3G

    Abstract: GVT71256B36 GVT71512B18
    Contextual Info: GALVANTECH, INC. GVT71256B36/GVT71512B18 256K X 36/512K X 18 SYNCHRONOUS SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 6.0, 6.5, 7.0, and 8.0ns Fast clock speed: 150, 133, 117, and 100MHz


    Original     		GVT71256B36/GVT71512B18 36/512K 100MHz 71256B36 access/10ns 71512B18 marking 3U 3T 3C diode 3E 3G GVT71256B36 GVT71512B18 PDF

    GVT71256G18

    Contextual Info: GALVANTECH, INC. GVT71256G18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 256K x 18 SRAM +3.3V CORE SUPPLY, +2.5V I/O SUPPLY FULLY REGISTERED, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		GVT71256G18 GVT71256G18 144x18 71256G18 PDF

    GVT71256E18

    Contextual Info: GALVANTECH, INC. GVT71256E18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 256K x 18 SRAM +3.3V CORE SUPPLY, +2.5V I/O SUPPLY REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		GVT71256E18 GVT71256E18 144x18 71256E18 access/10ns access/11ns access/20ns PDF

    GVT71256B18

    Contextual Info: GALVANTECH, INC. GVT71256B18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		GVT71256B18 GVT71256B18 144x18 71256B18 access/10ns access/11ns access/20ns PDF

    1000w buck boost converter

    Contextual Info: 2015 Product Catalog Advancing The Power Curve Headquartered in Boxborough, Massachusetts, at the location of its manufacturing operations, SynQor is a privately owned U.S. AS9100 and ISO9001 company. SynQor’s converters feature a patented two-stage power topology that greatly


    Original     		AS9100 ISO9001 MFG-91 1000w buck boost converter PDF

    GVT71128E36

    Abstract: CO78 7L Marking
    Contextual Info: GALVANTECH, INC. GVT71128E36 128K X 36 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 128K x 36 SRAM +3.3V CORE SUPPLY, +2.5V I/O SUPPLY REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		GVT71128E36 GVT71128E36 072x36 71128E36 access/10ns access/11ns access/20ns CO78 7L Marking PDF

    GVT71128B36

    Contextual Info: GALVANTECH, INC. GVT71128B36 128K X 36 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 128K x 36 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		GVT71128B36 GVT71128B36 072x36 71128B36 access/10ns access/11ns access/20ns PDF

    GVT71128G36

    Contextual Info: GALVANTECH, INC. GVT71128G36 128K X 36 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 36 SRAM +3.3V CORE SUPPLY, +2.5V I/O SUPPLY FULLY REGISTERED, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		GVT71128G36 GVT71128G36 072x36 71128G36 PDF

    GVT71256T18

    Abstract: DQ974
    Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. SYNCHRONOUS CACHE TAG SRAM PIPELINED OUTPUT GVT71256T18 256K X 18 SYNCHRONOUS TAG SRAM 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED REGISTERED INPUTS FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		GVT71256T18 71256T18 access/10ns GVT71256T18 DQ974 PDF

    multicolor led 2-pin

    Abstract: la cn5m lcg t67c-s2u2 M67S-N2Q2 Q65110A7237 lcg M67s p2q2 lw p4sg v2ab OSLUX LCB M67S LCB E6SG
    Contextual Info: Light Emitting Diodes Lumineszenzdioden 13 Light Emitting Diodes . Lumineszenzdioden . 13 Safety Instructions .


    Original     		PDF

    MICRON diode 2u

    Abstract: 24256 WR1 marking code marking WB4 MARKING WB1 micron power resistor Micron DDR marking H12 43256 1/transistor BL P65 diode marking code 4n
    Contextual Info: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES


    Original     		256Mb: MT49H8M32 MT49H16M16 144-Ball MT49H8M32 MICRON diode 2u 24256 WR1 marking code marking WB4 MARKING WB1 micron power resistor Micron DDR marking H12 43256 1/transistor BL P65 diode marking code 4n PDF

    smd diode schottky code marking 2U

    Abstract: smd wb3 smd diode marking codes 2U smd marking WB3 smd wb1 smd diode schottky code marking 2F smd diode wb1 marking 3U 3T 3C diode wb3 smd code SMD marking CODE 2U
    Contextual Info: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES


    Original     		256Mb: MT49H8M32 MT49H16M16 144-Ball MT49H8M32 smd diode schottky code marking 2U smd wb3 smd diode marking codes 2U smd marking WB3 smd wb1 smd diode schottky code marking 2F smd diode wb1 marking 3U 3T 3C diode wb3 smd code SMD marking CODE 2U PDF

    LCBT67S

    Abstract: marking 3U 3T 3C diode N91E-AADA-35-1 IESNA RP 27 LRTB GFTG marking 3U 3T 3C diode 3E 3G LCBT67C LED 5050 WHITE CODE C CQ7P.EC-KSKU-5O8Q IEC62471
    Contextual Info: Light Emitting Diodes LED ge 88 - 92 11 12 Light Emitting Diodes General Information Safety Instructions The use of new chip technologies means that OSRAM LEDs are delivering higher and higher levels of optical performance. Thus, even eye safety issues might increasingly need to be considered.


    Original     		PDF