MARKING 3H DIODE Search Results

lcd 94V0

Abstract: marking 3H diode 94v0 lcd marking code 3h diode
Contextual Info: uClamp3301H Low Voltage ClampTM for ESD and CDE Protection PROTECTION PRODUCTS -MicroClamp Description PRELIMINARY Features The μClamp series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones,

k2915

Abstract: SOT-23 marking l31 sot143 code marking l30 sot143 marking code 2c marking code 3h diode JW sot23 L30 SOT143 HSMS2850 hsms-285x JW SOT-23
Contextual Info: What HEWLETT* m L liM PACKARD Surface Mount Microwave Schottin Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/|jW at 915 MHz up to 35 mV/|jW at 2.45 GHz

marking 3H diode

Contextual Info: Variable Capacitance Diodes MA26V14 Silicon epitaxial planar type Unit: mm 3 2 • Features 1 0.39+0.01 −0.03 1.00±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating 0.25±0.05 1 0.50±0.05 0.25±0.05 0.15±0.05 0.05±0.03 0.35±0.01 • Good linearity and large capacitance-ratio in CD − VR relation

B6U 80/100

Abstract: MARK UU1 ERC35 Marking code jSs marking code aj
Contextual Info: ERC35 2 .5A g ± 'J : Outline Drawings FAST RECOVERY DIODE * Features ‘ Marking S oft recovery, low noise A ? - 3 - V :» H igh reliability Color code : Silver Abridged type name : Applications %E9 5* AV-K-?-? Voltage class H igh speed sw itch in g . a -j Uto

Contextual Info: Diodes SMD Type Surface Mount Zener Diode MM3Z75VS SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 ● Planar Die Construction ● Ultra-Small Surface Mount Package ● Ideally Suited for Automated Assembly Processes

BAT54WAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD BAT54WAGP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE SC-70/SOT-323 * Small surface mounting type. SC-70/SOT-323 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.

MM3Z75

Abstract: marking 1R SOD323 MM3Z10 MM3Z11 MM3Z12 MM3Z13 MM3Z15 MM3Z16 SOD-323 package marking 1R zener 2
Contextual Info: TH97/2478 MM3Z2V0 - MM3Z75 TH09/2479 IATF 0060636 SGS TH07/1033 ZENER DIODES SOD-323 VZ : 2.0 to 75 V PD : 300 mW FEATURES : 1.10 0.08 * Total Power Dissipation : Max. 300 mW * Small plastic package suitable for surface mounted design * Standard Zener Breakdown Voltage

smd diode l4p

Abstract: smd L4P smd diode marking code L41 smd code marking L4P sot-23 marking LC marking AA DIODE SOD C3 marking code sot 223 MV smd marking code SOT23 smd diode L43 SMD circuits MARKING CODE AA
Contextual Info: 11 SMD Schottky Diodes SMD® Schottky Diodes Description Mechanical Data Philips Components Schottky barrier diodes are metal junction devices which combine the attributes of low forward voltage drop with fast switching times. Specific applications include battery back-up circuits, overshoot/ undershoot pro­

9180A

Contextual Info: Ordering number:ENN6273 Schottky Barrier Diode SBS005 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Package Dimensions unitimm 1293 [SBS005] Features • Low forward voltage (If.-0.5A, Vp max=0.40V)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V14 Silicon epitaxial planar type Unit: mm 2 • Features 1 0.25±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.39+0.01 −0.03 1.00±0.05 0.25±0.05

MARKING CODE 1H sod

Abstract: MM3Z10 MM3Z11 MM3Z12 MM3Z13 MM3Z15 MM3Z16 MM3Z18 MM3Z20 MM3Z22
Contextual Info: MM3Z2V0~MM3Z75 SILICON PLANAR ZENER DIODES Features • Total power dissipation : max. 300 mW PINNING PIN • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-323 and symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V14 Silicon epitaxial planar type Unit: mm 2 • Features 1 0.39+0.01 −0.03 1.00±0.05 M Di ain sc te on na tin nc ue e/ d • Good linearity and large capacitance-ratio in CD − VR relation

UCLAMP3301

Contextual Info: uClamp3301H Low Voltage µClampTM for ESD and CDE Protection PROTECTION PRODUCTS - MicroClampTM Description Features The µClamp series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones,

SOD523 land pattern

Abstract: "punchthrough voltage" AND ESD 3301H
Contextual Info: uClamp3301H Low Voltage µClampTM for ESD and CDE Protection PROTECTION PRODUCTS - MicroClampTM Description Features The µClamp series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones,

clamp3301H

Abstract: 81611
Contextual Info: uClamp3301H Low Voltage ClampTM for ESD and CDE Protection PROTECTION PRODUCTS - MicroClampTM Description Features The μClamp series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones,

3H DIODE smd

Abstract: 1Z 116 marking code B0 SMD diode smd diode marking 2J zener smd marking 2x MM3Z10 MM3Z11 MM3Z12 MM3Z120 MM3Z13
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation : max. 300 mW PIN • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design • Tolerance approximately ± 5% 1 2 DESCRIPTION Silicon planar zener diode in a small plastic

smd diode marking 2J

Abstract: 5V6 DIODE MM3Z ZENER DIODE Datasheet Zener diode smd marking 07 sod323 diode marking code 2E 1P SMD CODE MARKING 3H DIODE smd 6V2 Zener Diode DIODE ZENER smd marking 72 smd transistor marking 1p
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES PINNING FEATURES PIN DESCRIPTION ● Total power dissipation : max. 200 mW ● Small plastic package suitable for 1 Cathode surface mounted design 2 Anode ● Tolerance approximately + 5% 1 DESCRIPTION 2 Silicon planar zener diode in a small plastic

smd zener diode code 2J

Abstract: Zener diode smd marking code 2A sod323 diode marking code 2E 3H DIODE smd smd diode marking 2J smd diode sod-323 marking code 2j ZENER 2V7 diode smd 3H DIODE SMD CODE MARKING 1e diode zener 8v2
Contextual Info: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES PINNING FEATURES PIN DESCRIPTION ● Total power dissipation : max. 200 mW ● Small plastic package suitable for 1 Cathode surface mounted design 2 Anode ● Tolerance approximately + 5% 1 DESCRIPTION 2 Silicon planar zener diode in a small plastic

MARKING rkm

Contextual Info: SC016 i .OA — 'i'X —Y • Outline Drawings GENERAL USE RECTIFIER DIODE ■ Features • m m 'g & rf- sim Surface m o unt device • K ftlK tt I S tjv • Marking High reliability ’ Applications • 1 B B General purpose rectifier applications • y L—

diode wb1

Abstract: TLP598G E67349
Contextual Info: TO SH IBA TLP598G TOSHIBA PHOTOCOUPLER TELECOMMUNICATION PHOTO RELAY TLP598G DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP598G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package DIP6 .

RX-2C G

Abstract: marking code rie sot23 em 2860 k2915 MARKING JW SOT-23
Contextual Info: What H E W LET T 1"KM PA C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series F eatures • S urface M ount SOT-23/ SOT-143 P ackage • High D e te c tio n S en sitivity: Description HSMS-2860 Package Lead Code

jedec package TO-243AA

Abstract: G0177
Contextual Info: INTERNATIONAL RECTIFIER bSE ]> 4655452 OOlTb'H 122 * I N R Data Sheet No. PD-2.176 INTERNATIONAL RECTIFIER X O R 10J SERIES 1 Amp Surface Mount Silicon Rectifier Diodes Description/Features Major Ratings and Characteristics 10J 'F A V 1.0 A @ Max. T ^ 31

lem module ha

Abstract: TT 80 SCR MODULE
Contextual Info: POWEREX INC 1SE D • 75T4L21 G0G343? 1 ■ W IMEREX CM420455 CM420855 925-7272 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 Powere» Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 SCR/Diode POW-R-BLOICMModules

bTI51

Abstract: fsjc F4CJ 2SJ209 TF230
Contextual Info: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-