MARKING 3A SOT89 Search Results

marking 3a SOT89

Abstract: marking 3A sot-89 KIA431F transistor marking 3a
Contextual Info: SEMICONDUCTOR KIA431F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 3A KIA431F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

Contextual Info: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current   ICM up to -5A Peak Pulse Current    2W Power Dissipation Low Saturation Voltage VCE sat < -180mV @ 1A

P35 marking code transistor

Abstract: 4600 8 pin ic Marking P35 sot89 marking p35
Contextual Info: DPLS350Y 50V PNP SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • BVCEO > -50V Max Continuous Current IC = -3A High Gain Holds up hFE ≥ 200 @ IC = -100mA Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)

Contextual Info: A Product Line of Diodes Incorporated FCX1053A 75V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 75V   IC = 3A high Continuous Current   ICM = 10A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound

ZXTP2014Z

Abstract: ZXTP2014ZTA
Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

FCX1053A

Abstract: FCX1053ATA 78m marking
Contextual Info: FCX1053A SOT89 NPN medium power transistor Summary BVCEO = 75V RCE sat = 78m⍀ IC = 3A Description This medium power NPN transistor, offered in the SOT89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications.

TS16949

Abstract: ZX5T955Z
Contextual Info: ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC

12A transistor smd

Abstract: SOT89 transistor marking 5A marking 3a SOT89 SMD TRANSISTOR 12a FCX617
Contextual Info: Transistors SMD Type Switching Transistor FCX617 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Excellent HFE characteristics up to 12 amps. Extremely low saturation voltage E.g. 8mv Typ. +0.1 0.53-0.1 +0.1 0.48-0.1 RCE sat 50mÙ at 3A.

Contextual Info: Transistors IC SMD Type Product specification FCX617 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Excellent HFE characteristics up to 12 amps. Extremely low saturation voltage E.g. 8mv Typ. +0.1 0.53-0.1 +0.1 0.48-0.1 RCE sat 50mÙ at 3A.

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

Contextual Info: DXT5551 160V NPN TRANSISTOR IN SOT89 Features Mechanical Data •  BVCEO > 160V IC = 600mA High Collector Current        Complementary PNP Type: DXT5401 Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

P35 marking code transistor

Abstract: Marking P35 sot89 transistor p35 DPLS350Y p35 marking
Contextual Info: DPLS350Y LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)

Contextual Info: DPLS350Y LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

sot-89 marking N5

Abstract: DN500F DP500F N5 npn transistor SOT89 N5 MARKING CODE
Contextual Info: DN500F Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VC E ( S A T =0.2V Typ. @IC /IB =3A/150mA) • Suitable for low voltage large current drivers • Complementary pair with DP500F • Switching Application

DN500F

Abstract: DP500F
Contextual Info: DP500F Semiconductor PNP Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =-0.2V Typ. @IC /IB =-3A/-150mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN500F

Contextual Info: A Product Line of Diodes Incorporated Green FCX555 150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • BVCEO > -150V BVCEV > -180V IC = -700mA high Continuous Collector Current Low saturation voltage VCE sat < -300mV @ -100mA

MARKING N2

Contextual Info: A Product Line of Diodes Incorporated FCX491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 40V IC = 1A high Continuous Current Low saturation voltage VCE sat < 500mV @ 1A

Contextual Info: A Product Line of Diodes Incorporated BST39 350V NPN HIGH VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 350V • • IC = 0.5A High Continuous Current • • ICM = 1A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound

SOT89 MARKING n35

Abstract: marking n35 sot89 N35 DNLS350Y DPLS350Y
Contextual Info: DNLS350Y LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DPLS350Y) Ideally Suited for Automated Assembly Processes

ZXTP2013Z

Abstract: ZXTP2013ZTA
Contextual Info: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

DN500F

Abstract: Transistor SOT89 N5 MARKING CODE DP500F
Contextual Info: DN500F Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DP500F

KTA1001

Contextual Info: SEMICONDUCTOR KTA1001 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A FEATURES C H hFE=100 320 VCE=-2V, IC=-0.5A . G J B E hFE=70(Min.) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage. DIM A

Contextual Info: SEMICONDUCTOR KTA1001 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A C FEATURES H hFE=100 320 VCE=-2V, IC=-0.5A . G J B E hFE=70(Min.) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage. DIM A

KTA1001

Abstract: sot-89 marking
Contextual Info: SEMICONDUCTOR KTA1001 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A FEATURES C H ᴌhFE=100ᴕ320 VCE=-2V, IC=-0.5A . G J B E ᴌhFE=70(Min.) (VCE=-2V, IC=-3A). ᴌLow Collector Saturation Voltage.