MARKING 3A SOT89 Search Results

marking 3a SOT89

Abstract: marking 3A sot-89 KIA431F transistor marking 3a
Contextual Info: SEMICONDUCTOR KIA431F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 3A KIA431F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

TSD2150A

Abstract: marking AE SOT-89 TSB1424A TSB1424ACW TSB1424ACY
Contextual Info: TSB1424A Low Vce sat PNP Transistor BVCEO = - 50V Ic = - 3A VCE (SAT), = - 0.35V(typ.) @Ic / Ib = - 2A / - 0.1A Pin assignment: 1. Base 2. Collector 3. Emitter Features Ordering Information Low VCE (SAT). Part No. Packing Package Marking TSB1424ACW 2.5k per reel

Contextual Info: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current   ICM up to -5A Peak Pulse Current    2W Power Dissipation Low Saturation Voltage VCE sat < -180mV @ 1A

P35 marking code transistor

Abstract: 4600 8 pin ic Marking P35 sot89 marking p35
Contextual Info: DPLS350Y 50V PNP SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • BVCEO > -50V Max Continuous Current IC = -3A High Gain Holds up hFE ≥ 200 @ IC = -100mA Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)

Marking P35

Abstract: transistor p35 Marking P35 sot89 SOT89 transistor marking 5A DPLS350Y Diodes P35
Contextual Info: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM up to -5A Peak Pulse Current 

sot89 marking code 8A

Abstract: DS33074
Contextual Info: A Product Line of Diodes Incorporated Green FCX789A 25V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -25V IC = -3A high Continuous Current ICM = -8A Peak Pulse Current Low saturation voltage VCE sat < -320mV @ -3A

Contextual Info: A Product Line of Diodes Incorporated FCX1053A 75V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 75V   IC = 3A high Continuous Current   ICM = 10A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound

ZXTP2014Z

Abstract: ZXTP2014ZTA
Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

Bv 42 transistor

Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

ZX5T955Z

Abstract: ZX5T955ZTA Bv 42 transistor
Contextual Info: ZX5T955Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC

FCX1053A

Abstract: FCX1053ATA 78m marking
Contextual Info: FCX1053A SOT89 NPN medium power transistor Summary BVCEO = 75V RCE sat = 78m⍀ IC = 3A Description This medium power NPN transistor, offered in the SOT89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications.

TS16949

Abstract: ZX5T955Z
Contextual Info: ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC

MARKING KN2

Contextual Info: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 3A high Continuous Current  Case material: Molded Plastic. “Green” Molding Compound.  Low saturation voltage VCE(sat) < 300mV @ 1A 

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

Contextual Info: Transistors IC SMD Type Product specification FCX617 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Excellent HFE characteristics up to 12 amps. Extremely low saturation voltage E.g. 8mv Typ. +0.1 0.53-0.1 +0.1 0.48-0.1 RCE sat 50mÙ at 3A.

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

Contextual Info: DXT5551 160V NPN TRANSISTOR IN SOT89 Features Mechanical Data •  BVCEO > 160V IC = 600mA High Collector Current        Complementary PNP Type: DXT5401 Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

P35 marking code transistor

Abstract: Marking P35 sot89 transistor p35 DPLS350Y p35 marking
Contextual Info: DPLS350Y LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)

marking 3a SOT89

Contextual Info: DPLS350Y LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)

Contextual Info: DPLS350Y LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

sot-89 marking N5

Abstract: DN500F DP500F N5 npn transistor SOT89 N5 MARKING CODE
Contextual Info: DN500F Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VC E ( S A T =0.2V Typ. @IC /IB =3A/150mA) • Suitable for low voltage large current drivers • Complementary pair with DP500F • Switching Application

Contextual Info: DXT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 40V       Epitaxial Planar Die Construction Complementary PNP Type Available DXT3906 Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

FCX619

Contextual Info: A Product Line of Diodes Incorporated FCX619 50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V  Case: SOT89  IC = 3A high Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound

DN500F

Abstract: DP500F
Contextual Info: DP500F Semiconductor PNP Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =-0.2V Typ. @IC /IB =-3A/-150mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN500F