MARKING 34P Search Results
MARKING 34P Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
|
||
| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
|
||
| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
|
||
| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
|
||
| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
|
MARKING 34P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
KIA7434P
Abstract: 7434P
|
Original |
kia7434p7434p | |
24EB60
Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
|
Original |
24eb60transistor marking code wm915j100retma rails+6 | |
marking W26 sot23
Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
|
Original |
ot23-3ot-23ot23-5ot-25+14 | |
|
Contextual Info: EUAA34-22.4455M RoHS Pb EU A A 34 -22.4455M Series RoHS Compliant Pb-free Resistance Welded HC-49/U Crystal Nominal Frequency 22.4455MHz Frequency Tolerance/Stability ±50ppm at 25°C, ±100ppm over 0°C to +70°C Load Capacitance 34pF Parallel Resonant |
Original |
euaa34-224455mhc-49/u4455mhz+2 | |
SUD50N10-34P
Abstract: SUD50N10-34P-E3 lcd tv inverter
|
Original |
sud50n10-34po-252sud50n10-34p-e318-jul-08+1 | |
marking 34PContextual Info: New Product SUD50N10-34P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.034 at VGS = 10 V 20 0.040 at VGS = 6.0 V 20 VDS (V) 100 Qg (Typ) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 24 nC COMPLIANT |
Original |
sud50n10-34po-252sud50n10-34p-e308-apr-05+1 | |
hanbit non-volatile ram
Abstract: HMN1288J MN128
|
Original |
hmn1288j34pin-jlcc576-bithanbit non-volatile ram+1 | |
HMN5128JVContextual Info: HANBit HMN5128JV Non-Volatile SRAM MODULE 4Mbit 512K x 8-Bit ,34Pin-JLCC, 3.3V Part No. HMN5128JV GENERAL DESCRIPTION The HMN5128JV Nonvolatile SRAM is a 4,194,304-bit static RAM organized as 524,288 bytes by 8 bits. The HMN5128JV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write |
Original |
hmn5128jv34pin-jlcc304-bit | |
sky77528
Abstract: SKY77344 SKY77531 sky77534 srf 3417 SKY77526 SKY73009-11 SKY77518 sky77524 SKY77519
|
Original |
bro254-09bsky77528sky77344sky77531+7 | |
sky77528
Abstract: sky77534 SKY77526 SKY77705 SKY77548 SKY77542 SKY65404-21 SKY77544 SKY77701 AX508
|
Original |
bro254-10asky77528sky77534sky77526+7 | |
SKY77733
Abstract: sky77814 3G HSDPA repeater SKY77778-61 SKY77621 diode Marking code L4W SE2435
|
Original |
bro254-14bsky77733sky778143g hsdpa repeater+4 | |
SKY77709
Abstract: SKY77432 AAT2430 SMV1275-079 aat3604 DIODE AA116 TT6P3-0860T
|
Original |
bro254-14asky77709sky77432aat2430+4 | |
SKY77733
Abstract: QUALCOMM FLIP CHIP ASSEMBLY SKY77765 aat2430 aat3604 aat140
|
Original |
bro254-13asky77733qualcomm flip chip assemblysky77765+3 | |
|
Contextual Info: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
dmg3415u | |
|
|
|||
AWM 2651 VW-1 300V
Abstract: LIAN FENG - 2651 - E209329 - AWM - 28AWG E209329 lian feng E209329 AWM 2651 VW-1 28 awg lian feng 2651 awm 2651 300v 28awg 2651 e209329 AWG28 ul2651 AWM 2651
|
Original |
28awgawg28-xx/x/xxx100ft1500psi+11 | |
MMSZ5241BT1
Abstract: MMSZ5221BT1 MMSZ5222BT1 MMSZ5223BT1 MMSZ5224BT1 MMSZ5225BT1 MMSZ5226BT1 MMSZ5227BT1 MMSZ5228BT1 marking M5 SOD-123
|
Original |
mmsz5221bt1od-12334-packager14525+10 | |
marking code 34P
Abstract: DFN2015H4-3 DMG3415U DMG3415UFY4-7
|
Original |
dmg3415ufy4aec-q101dfn2015h4-3j-std-020+4 | |
marking 34P sot 23
Abstract: DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P
|
Original |
dmg3415uaec-q101ot-23j-std-020d+5 | |
DMG3415U
Abstract: marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D
|
Original |
dmg3415uaec-q101ot-23j-std-020d+4 | |
|
Contextual Info: DMP2069UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 54mΩ @ VGS = -4.5V • 69mΩ @ VGS = -2.5V • |
Original |
dmp2069ufy4aec-q101dfn2015h4-3ds31949 | |
|
Contextual Info: DMG3415UFY4 N EW PRODU CT P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V Low Input Capacitance Fast Switching Speed |
Original |
dmg3415ufy4aec-q101dfn2015h4-3j-std-020+1 | |
lian feng E209329
Abstract: E209329 vw-1 300v
|
OCR Scan |
1500ps1awg28-xx/x/300100ft300ft+6 | |
|
Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V ID TA = +25°C -4.0A -2.0A Description • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
Original |
dmg3415uaec-q101ds31735 | |
|
Contextual Info: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS R DS(on) max -20V 42.5mΩ @ V GS = -4.5V 71mΩ @ V GS = -1.8V ID T A = +25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching |
Original |
dmg3415uaec-q101ds31735 | |