MARKING 33A ON SEMICONDUCTOR Search Results

diode marking 33a on semiconductor

Abstract: marking 33a on semiconductor
Contextual Info: FDA33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 940 m Features Description • RDS on = 880 m (Typ.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

FDPF33N25T

Abstract: diode marking 33a on semiconductor marking 33a on semiconductor tm 1640
Contextual Info: FDPF33N25T N-Channel UniFETTM MOSFET 250 V, 33 A, 94 m Features Description • RDS on = 94 m (Max.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDP33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 94 m Features Description • RDS on = 94 m (Max.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

diode marking 33a on semiconductor

Abstract: marking 33a on semiconductor
Contextual Info: FDB33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 94 m Features Description • RDS on = 94 m (Max.) @ VGS = 10 V, ID 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

zp 33a

Abstract: diode marking 33a on semiconductor 2SJ683 marking 33a on semiconductor A1057
Contextual Info: 2SJ683 Ordering number : ENA1057 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ683 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: 2SJ683 Ordering number : ENA1057 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ683 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C

A1319

Abstract: ATP207 diode marking 33a on semiconductor marking 33a on semiconductor MJ-33
Contextual Info: ATP207 Ordering number : ENA1319 SANYO Semiconductors DATA SHEET ATP207 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.

Contextual Info: ATP207 Ordering number : ENA1319A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP207 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in

Contextual Info: ATP207 Ordering number : ENA1319 SANYO Semiconductors DATA SHEET ATP207 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.

FDPF 33N25T

Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
Contextual Info: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

FDP33N25

Contextual Info: UniFET FDP33N25 TM 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)

diode marking 33a on semiconductor

Abstract: FDB33N25 FDB33N25TM FDI33N25 FDI33N25TU
Contextual Info: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

diode marking 33a on semiconductor

Abstract: FDI33N25TU marking 33a on semiconductor FDB33N25 FDB33N25TM FDI33N25
Contextual Info: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

diode marking 33a on semiconductor

Abstract: marking 33a on semiconductor FDA33N25
Contextual Info: UniFETTM FDA33N25 tm N-Channel MOSFET 250V, 33A, 0.094Ω Features Description • RDS on = 0.088Ω ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF33N25T

Contextual Info: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • Improved dv/dt capability These N-Channel enhancement mode power field effect

FDPF33N25

Abstract: marking 33a on semiconductor FDP33N25
Contextual Info: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

Contextual Info: FQB33N10 N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

fdpf33n25t

Abstract: diode marking 33a on semiconductor marking 33a on semiconductor
Contextual Info: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

Contextual Info: FQB33N10L N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

FDPF33N25T

Abstract: diode marking 33a on semiconductor marking 33a on semiconductor FDP33N25
Contextual Info: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

K3836

Contextual Info: 2SK3836 Ordering number : EN8636 N-Channel Silicon MOSFET 2SK3836 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: Ordering number : ENA1319A ATP207 N-Channel Power MOSFET http://onsemi.com 40V, 65A, 9.1mΩ, Single ATPAK Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C

K383

Abstract: diode marking 33a on semiconductor marking 33a on semiconductor sanyo 132A 2SK3836 K3836 200uH
Contextual Info: 2SK3836 Ordering number : EN8638 N-Channel Silicon MOSFET 2SK3836 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

FDB2532

Contextual Info: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs