MARKING 300 TO252 Search Results

D-68623

Abstract: DGS9-03AS
Contextual Info: DGS 9-03AS DGS 10-03A IFAV = 11 A VRRM = 300 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM Type V Marking V Circuit Package A = Anode, C = Cathode , TAB = Cathode on product A 300 300 DGS 9-03AS C A 300 300 DGS 10-03A C

Contextual Info: DGS 9-03AS DGS 10-03A IFAV = 11 A VRRM = 300 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM Type V Marking V on product A 300 300 DGS 9-03AS C A 300 300 DGS 10-03A A TO-252 AA 9A030AS C DGS 10-03A TO-220 AC A C A C TAB

DIODE Ifavm 30 A

Abstract: 8P030AS 8P030
Contextual Info: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings

Contextual Info: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①

DPG10I300PA

Contextual Info: DPG 10 IM 300 UC advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 3 2 Marking on Product: PAOGUI Backside: cathode Features / Advantages:

Contextual Info: DGS 3-03AS Advanced Technical Information IFAV = 5A VRRM = 300 V CJunction = 3.7 pF Gallium Arsenide Schottky Rectifier VRSM VRRM V V 300 300 Type Marking C A TO-252 AA on product DGS 3-03AS A 3A030AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol

DPG10I300PA

Abstract: dpak DIODE ANODE COMMON
Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:

DPG10I300PA

Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

Contextual Info: DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation Preliminary Data Type Marking on product DGS 17-03CS 17A30CS DGSK 36-03CS Circuit Package A Single C A TO-252 AA TO-263 AB Common cathode

DGS17-03CS

Contextual Info: DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation Type Marking on product DGS 17-03CS 17A300AS DGSK 36-03CS DGSK 36-03CS Circuit Package A Single C A TO-252 AA TO-263 AB Common cathode

DTP3200B

Abstract: DXTP03200BP5 DXTP03200BP5-13
Contextual Info: A Product Line of Diodes Incorporated DXTP03200BP5 ADVANCE INFORMATION 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W

marking code IC 8A

Abstract: DXTP19020DP5-13 DXTP19020DP5 DTP1920D
Contextual Info: A Product Line of Diodes Incorporated DXTP19020DP5 ADVANCE INFORMATION 20V PNP HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 1.3W

DXT2012

Abstract: DXT2012P5 DXT2012P5-13 sot223 code r1k
Contextual Info: A Product Line of Diodes Incorporated DXT2012P5 ADVANCE INFORMATION 60V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W

DXT458

Abstract: DXT458P5 DXT458P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT458P5 ADVANCE NEWINFORMATION PRODUCT NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

DXT2011

Abstract: DXT2011P5 DXT2011P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT2011P5 ADVANCE INFORMATION 100V NPN LOW SAT MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

DXT790A

Abstract: DXT790AP5-13 DXT790AP5 dxt790
Contextual Info: A Product Line of Diodes Incorporated DXT790AP5 40V PNP HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W VCEO = 40V IC = 3A; ICM = 6A

DXT2013

Abstract: DXT2013P5 DXT2013P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT2013P5 ADVANCE INFORMATION 100V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W

DXT2010

Abstract: DXT2010P5 DXT2010P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT2010P5 ADVANCE INFORMATION 60V NPN MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W

4N060

Abstract: 4N06 4n0603 IPD100N06S4-03 D100A PG-TO252-3-11 J350-6 ipd100n
Contextual Info: IPD100N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 3.5 mΩ ID 100 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

07N60S5

Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251

6r385P

Abstract: IPD60R385CP 6R38 6r385 6r385p infineon JESD22 SP000062533 INFINEON transistor marking
Contextual Info: IPD60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO252 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

IPD75N04S4-06

Abstract: 4N0406 PG-TO252-3-313 17A44 d75a 4N04 ipd75n
Contextual Info: IPD75N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.9 mΩ ID 75 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

04N80C3

Abstract: PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking
Contextual Info: SPD04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

SPD03N60C3

Abstract: 03N60C3 P-TO252 SDP06S60 SPU03N60C3
Contextual Info: SPD03N60C3 SPU03N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability