MARKING 300 DPAK Search Results

DIODE Ifavm 30 A

Abstract: 8P030AS 8P030
Contextual Info: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings

Contextual Info: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①

to252aadpak

Contextual Info: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Anode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①

Contextual Info: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Anode 8P030AS Cathode (Flange) Anode Conditions Maximum Ratings IFRMS IFAVM ① IFRM

DPG10I300PA

Contextual Info: DPG 10 IM 300 UC advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 3 2 Marking on Product: PAOGUI Backside: cathode Features / Advantages:

03866

Abstract: 07062
Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:

DPG10I300PA

Abstract: dpak DIODE ANODE COMMON
Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:

DPG10I300PA

Abstract: diode t 3866 t 3866 power transistor dpak DIODE ANODE COMMON
Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:

DPG10I300PA

Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

DPG10I300PA

Contextual Info: DPG10IM300UC HiPerFRED² VRRM = 300 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10IM300UC Marking on Product: PAOGUI Backside: cathode 1 3 2/4 Features / Advantages: Applications:

ignition IGBT

Abstract: ngb15n41 aac marking NGB15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

6P060AS

Abstract: marking diode 6a
Contextual Info: DSEP6-06AS HiPerFRED VRRM = 600 V I FAV = 6A t rr = 20 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP6-06AS Marking on Product: 6P060AS Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-252 DPak

NGP15N41CL

Abstract: NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 Direct fuel injection aac marking
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped

NGD15N41CL-D

Abstract: NGP15N41CL NGB15N41CLT4 NGD15N41CL NGD15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped

15N41CLG

Abstract: 15N41CLG transistor 15N41G 15n41 NGP15N41CLG NGB15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41cLG

Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41CL NGB15N41CL NGD15N41CLT4 NGP15N41CL NGB15N41CLT4
Contextual Info: NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41CLG

Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41A 350VVGE gd 361 transistor NGB15N41A NGP15N41AC
Contextual Info: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

15N41G

Contextual Info: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

071 0039

Abstract: ngb15n41 NGB15N41CLT4
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

NGB15N41CLT4

Abstract: NGD15N41CL NGD15N41CLT4 NGP15N41CL
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

Contextual Info: MURD320 Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state- of- the- art devices have the following features: ULTRAFAST

Contextual Info: A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 DPAK N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V(BR)DSS ID RDS(on) TA = 25°C 24mΩ @ VGS= 10V 14.4A 39mΩ @ VGS= 4.5V 11.6A • Low on-resistance • Fast switching speed

DMN3024LK3-13

Abstract: DMN3024LK3 J-STD-020D
Contextual Info: A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 DPAK N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 24mΩ @ VGS= 10V 14.4A 39mΩ @ VGS= 4.5V

D-PAK B340

Abstract: b320 dpak MBRD360 marking 300 DPAK MBRD320 MBRD330 MBRD330RL MBRD330T4 dc marking code dpak DPAK marking code 300
Contextual Info: MBRD320, MBRD330, MBRD340, MBRD350, MBRD360 MBRD320, MBRD340 and MBRD360 are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20 TO 60 VOLTS . . . designed for use as output rectifiers, free wheeling, protection