MARKING 23A MOSFET Search Results

IRLR2908

Abstract: IRLU2908
Contextual Info: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V

IRLR2908

Abstract: IRLU2908 MOSFET IRF 380
Contextual Info: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V

IRFP23N50L

Abstract: 94230B 035H IRFPE30
Contextual Info: PD - 94230B IRFP23N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.190Ω 500V 170ns

PD-95660

Contextual Info: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed

IRLR2908

Abstract: IRLU2908 IRLR2908PbF
Contextual Info: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

irf5210s

Contextual Info: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L

AN-994

Abstract: EIA-541 IRFR120 IRFU120 IRLR2908 IRLU2908 marking 23A Mosfet IRLR2908PbF
Contextual Info: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

U120

Abstract: IRLR2908PbF
Contextual Info: PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 80V

IRLR2908PbF

Contextual Info: PD - 95552 IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

60v 39a to220

Contextual Info: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed

IRL3302

Contextual Info: PD 9.1696A IRL3302 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching D VDSS = 20V RDS on = 0.020W G Description These HEXFET Power MOSFETs were designed

Contextual Info: International • massmss oois^o35^* inr pd-9.54ob IR F P 254 Rectifier HEXFET Power MOSFET • • • • • • INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

Contextual Info: SSDF9504 23A, 40V, RDS ON 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION TO-252-4L The SSDF9504 provide the designer with best combination

IRL3302

Contextual Info: PD 9.1696A IRL3302 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching D VDSS = 20V RDS on = 0.020W G Description These HEXFET Power MOSFETs were designed

Contextual Info: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified Integrated Monolithic Schottky Diode V DSS VGS R DS(on) R DS(on) l Low Profile (<0.7 mm)

IRL3302

Abstract: ld 18
Contextual Info: PD 9.1696 International IQR Rectifier IRL3302 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching V dss = 20 V RüS on = 0.020Í2 lD = 39A

irf360lc

Abstract: ID 9302 IRFP360LC IRFPE30
Contextual Info: PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS on = 0.20 Ω

sd23a

Contextual Info: PD 9 .1696A International IOR Rectifier IRL3302 PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Optimized for 4.5V Gate Drive • Ideal for CPU Core DC-DC Converters • 150°C Operating Temperature • Fast Switching V dss = 20 V RüS on = 0.020S2

9972gi

Abstract: SSM9972GI marking codes transistors SSs 9972GI marking codes transistors SSs TO-220CFM 9972g
Contextual Info: SSM9972GI N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 60V R DS ON 18mΩ ID 35A DESCRIPTION The SSM9972GI achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC

IRL3302

Abstract: AN-994 IRL3302S
Contextual Info: PD - 9.1692A IRL3302S PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.020W G ID = 39A S Description These HEXFET Power MOSFETs were designed

IRF6714MTR1PBF

Abstract: IRF6714MTRPBF stencil
Contextual Info: PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET™ Power MOSFET ‚ l l l l l l l l l l RoHs Compliant and Halogen Free  Low Profile <0.6 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters

DirectFET

Abstract: IRF6714MTR1PBF IRF6714MTRPBF
Contextual Info: PD - 96130 IRF6714MPbF IRF6714MTRPbF DirectFET™ Power MOSFET ‚ l l l l l l l l l l Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 mm) 25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V

sd23a

Abstract: ak 957
Contextual Info: PD - 9.1692C International IOR Rectifier IRL3302S PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V ^D S o n =

IRL3302

Abstract: AN-994 IRL3302S
Contextual Info: PD - 9.1692A IRL3302S PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.020W G ID = 39A S Description These HEXFET Power MOSFETs were designed