MARKING 137M Search Results

Contextual Info: SCRH1035R SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 1 SCRH1035R-1R5 SCRH1035R-2R2 SCRH1035R-3R3 SCRH1035R-4R7 SCRH1035R-5R6

Contextual Info: SCRH1035R SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 1 SCRH1035R-1R5 SCRH1035R-2R2 SCRH1035R-3R3 SCRH1035R-4R7 SCRH1035R-5R6

Contextual Info: SC414MF SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction – Low EMI 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS DC Resistance MAX (2) (1) Saturation(3) Temperature (4) Current Current

Contextual Info: SC414MF SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction – Low EMI 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS DC Resistance Ω MAX (2) (1) Saturation(3) Temperature (4) Current Current

RFMD RF2048

Contextual Info: RF2048 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features „ „ „ „ MARKING - C8 SI GN S „ DC to 8000MHz Operation Internally matched Input and Output 12dB Small Signal Gain +25dBm Output IP3

Contextual Info: Ordering number : ENA2188 MCH3486 N-Channel Power MOSFET 60V, 2A, 137mΩ Single MCPH3 http://onsemi.com Features • On-resistance RDS on 1=105mΩ(typ.) • Halogen free compliance • 4V drive • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25°C

a2188

Contextual Info: Ordering number : ENA2188 MCH3486 N-Channel Power MOSFET 60V, 2A, 137m Single MCPH3 ht t p://onse m i.c om Features • On-resistance RDS on 1=105m (typ.) • Halogen free compliance • 4V drive • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25°C

Contextual Info: Ordering number : ENA1124A CPH3356 P-Channel Power MOSFET http://onsemi.com –20V, –2.5A, 137mΩ, Single CPH3 Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

Contextual Info: Ordering number : EN8699A VEC2315 P-Channel Power MOSFET http://onsemi.com –60V, –2.5A, 137mΩ, Dual VEC8 Features • • • • • ON-resistance RDS on 1=105mΩ(typ.) 4V drive High-density mounting Protection diode in Halogen free compliance Specifications

ssm3j129

Contextual Info: SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSV SSM3J129TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance Ron = 137mΩ (max) (@VGS = -1.5 V) Unit: mm 1.7±0.1

Contextual Info: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)

SSM3J321T

Contextual Info: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)

Contextual Info: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T Power Management Switch Applications High-Speed Switching Applications • • 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)

Contextual Info: SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSV SSM3J129TU Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive • Low ON-resistance Ron = 137mΩ (max) (@VGS = -1.5 V) Unit: mm 1.7±0.1 Symbol

Contextual Info: SSM3J129TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSV SSM3J129TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance Ron = 137mΩ (max) (@VGS = -1.5 V) Unit: mm 1.7±0.1

Contextual Info: SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS V SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V)

Contextual Info: Ordering number : ENA1822A VEC2616 Power MOSFET http://onsemi.com 60V, 3A, 80mΩ, –60V, –2.5A, 137mΩ, Complementary Dual VEC8 Features • • • • • ON-resistance Nch: RDS on 1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET

BN200NW

Abstract: BNJ46F THREAD ROD BNC520 BNDN1000 BN200 BA411S BN400NW BNE15W BN400
Contextual Info: Terminal Blocks BN Power Blocks BN Series Key features of the BN series include: • Power blocks BN200 and BN400 up to 350A are available for DIN rail or direct mounting on panel surfaces UL Recognized File No. E78117 CSA Certified File No. LR64803 File No. J9551516

transistor "micro-x" "marking" 3

Abstract: micro-X ceramic Package hemt micro-X ceramic Package
Contextual Info: RF2048 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers

transistor "micro-x" "marking" 3

Abstract: micro-X ceramic Package hemt
Contextual Info: RF2048 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers

Contextual Info: BurrĆBrown Products from Texas Instruments VC VCA820 A8 20 VC A820 SBOS395 – OCTOBER 2007 Wideband, > 40dB Adjust Range, Linear in dB VARIABLE GAIN AMPLIFIER FEATURES 1 • • • • • • • 23 150MHz SMALL-SIGNAL BANDWIDTH 137MHz, 5VPP BANDWIDTH G = +10V/V

A820

Abstract: LMH6502 VCA810
Contextual Info: BurrĆBrown Products from Texas Instruments VC VCA820 A8 20 VC A820 SBOS395 – OCTOBER 2007 Wideband, > 40dB Adjust Range, Linear in dB VARIABLE GAIN AMPLIFIER FEATURES 1 • • • • • • • 23 150MHz SMALL-SIGNAL BANDWIDTH 137MHz, 5VPP BANDWIDTH G = +10V/V

capacitor 10mf 16v

Contextual Info: BurrĆBrown Products from Texas Instruments VC VCA820 A8 20 VC A820 SBOS395 – OCTOBER 2007 Wideband, > 40dB Adjust Range, Linear in dB VARIABLE GAIN AMPLIFIER FEATURES 1 • • • • • • • 23 150MHz SMALL-SIGNAL BANDWIDTH 137MHz, 5VPP BANDWIDTH G = +10V/V

Contextual Info: BurrĆBrown Products from Texas Instruments VC VCA820 A8 20 VC A820 SBOS395 – OCTOBER 2007 Wideband, > 40dB Adjust Range, Linear in dB VARIABLE GAIN AMPLIFIER FEATURES 1 • • • • • • • 23 150MHz SMALL-SIGNAL BANDWIDTH 137MHz, 5VPP BANDWIDTH G = +10V/V