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    MARKING 06P Search Results

    MARKING 06P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC
    		Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) PDF Buy
    MG80C186-10/BZA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    54ACT244/B2A
    		Rochester Electronics LLC 54ACT244/B2A - Dual marked (5962-8776001B2A) PDF Buy
    ICM7555MTV/883
    		Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80186-8/BYC
    		Rochester Electronics LLC 80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) PDF Buy

    MARKING 06P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VUM33-06PH

    Abstract: 33-06PH vum33 Fast Recovery Bridge Rectifier, 60A, 600V
    Contextual Info: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 mΩ Part name (Marking on product)


    Original     		33-06PH VUM33-06PH 20100921b VUM33-06PH 33-06PH vum33 Fast Recovery Bridge Rectifier, 60A, 600V PDF

    Contextual Info: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectiier Boost Diode VRRM = 1600 V VRRM Module for Power Factor Correction MOSFET = 600 V VDSS 60 A ID25 = 600 V = A IDAV = 106 A IF25 IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 m = 50 Part name (Marking on product)


    Original     		33-06PH VUM33-06PH 20100921b PDF

    Contextual Info: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 1.9 V RDS(on) = 120 mΩ Part name (Marking on product)


    Original     		33-06PH VUM33-06PH 20100611a PDF

    4538

    Contextual Info: 8-13-99 From: DocuFACTSltm] Ph# 949-253-7438 To: 16038801932 Pomona 12:06pn p. 5 of 5 Model 4538 Minigrabber Test ClipTo Stacking Banana Piug With Retractile Coiled Cord —U4 (S.M) ft w _ «•«•» v ie i 0,196-1 » A—A FEATURES: • Retractable cord to allow connections at various lengths.


    OCR Scan     		QQ-C-533, MDL-G-45204, 4538 PDF

    SUD50N024-06P

    Abstract: SUD50N024-06P-E3 marking 06P
    Contextual Info: SUD50N024-06P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24C ID (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency


    Original     		SUD50N024-06P O-252 SUD50N024-06P--E3 S-509104--Rev. 09-May-05 SUD50N024-06P SUD50N024-06P-E3 marking 06P PDF

    WF06P

    Contextual Info: WF08P, WF06P ±1%, ±5% 0Ω, 1Ω~1MΩ High Power Chip Resistors Size 0805 1/4W ; 0603 1/8W Page 1 of 7 WF08P/06P_V05 Jul.2010 00-S-R31-C FEATURE 1. 2. 3. 4. 5. Small size and light weight High reliability and stability Reduced size of final equipment High precision


    Original     		WF08P, WF06P WF08P/06P 00-S-R31-C WF06P WF08P PDF

    WF06P

    Contextual Info: Approval sheet WF08P, WF06P ±1%, ±5% 0Ω, 1Ω~1MΩ High Power Chip Resistors Size 0805 1/4W ; 0603 1/8W *Contents in this sheet are subject to change without prior notice. Page 1 of 7 ASC_WF08-06P_V05 Jul.2010 Approval sheet FEATURE 1. 2. 3. 4. 5. Small size and light weight


    Original     		WF08P, WF06P WF08-06P WF06P WF08P PDF

    Contextual Info: SUD50N024-06P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24C ID (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency


    Original     		SUD50N024-06P O-252 SUD50N024-06P SUD50N024-06P--E3 08-Apr-05 PDF

    ASC_WW08-06P

    Abstract: WW06P R047 WW08P
    Contextual Info: Approval sheet WW08P, WW06P ±1%, ±5% 47mΩ~976mΩ High Power Low Ohmic Chip Resistors Size 0805 1/3W ; 0603 1/4W *Contents in this sheet are subject to change without prior notice. Page 1 of 7 ASC_WW08-06P_V08 Jul.2010 Approval sheet FEATURE 1. 2. 3. 4.


    Original     		WW08P, WW06P WW08-06P WW06P WW08P ASC_WW08-06P R047 WW08P PDF

    SQM85N03-06P-GE3

    Contextual Info: SQM85N03-06P Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • Compliant to RoHS Directive 2002/95/EC


    Original     		SQM85N03-06P 2002/95/EC AEC-Q101 O-263 SQM85N03-06P-GE3 18-Jul-08 SQM85N03-06P-GE3 PDF

    WW06P

    Abstract: WW08P
    Contextual Info: WW08P, WW06P ±1%, ±5% 47mΩ~976mΩ High Power Low Ohmic Chip Resistors Size 0805 1/3W ; 0603 1/4W Page 1 of 7 WW08P/06P_V08 Jul.2010 00-S-R29-E FEATURE 1. 2. 3. 4. 5. Small size and light weight High reliability and stability Reduced size of final equipment


    Original     		WW08P, WW06P WW08P/06P 00-S-R29-E WW06P WW08P WW08P PDF

    SUD50N024-06P

    Abstract: SUD50N024-06P-E3
    Contextual Info: SUD50N024-06P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24C ID (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency


    Original     		SUD50N024-06P O-252 SUD50N024-06P--E3 18-Jul-08 SUD50N024-06P SUD50N024-06P-E3 PDF

    ic MARKING QG

    Contextual Info: SUR50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5


    Original     		SUR50N025-06P O-252 SUR50N025-06P--E3 SUR50N025-06P-T4--E3 S-50932--Rev. 09-May-05 ic MARKING QG PDF

    sud*50n025-06p

    Abstract: SUD50N025-06P SUD50N025-06P-E3
    Contextual Info: SUD50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5


    Original     		SUD50N025-06P O-252 SUD50N025-06P--E3 S-50934--Rev. 09-May-05 sud*50n025-06p SUD50N025-06P SUD50N025-06P-E3 PDF

    Contextual Info: SQM85N03-06P Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • Compliant to RoHS Directive 2002/95/EC


    Original     		SQM85N03-06P 2002/95/EC AEC-Q101 O-263 O-263 SQM85N03-06P-GE3 18-Jul-08 PDF

    S0914

    Abstract: SQR50N03-06P-GE3 transistor a 1413 69061
    Contextual Info: SQR50N03-06P Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Reverse Lead DPAK for Top Side Cooling 30 RDS(on) (Ω) at VGS = 10 V 0.0065 RDS(on) (Ω) at VGS = 4.5 V 0.0095 ID (A) • Halogen-free According to IEC 61249-2-21


    Original     		SQR50N03-06P O-252 AEC-Q101 2002/95/EC O-252 18-Jul-08 S0914 SQR50N03-06P-GE3 transistor a 1413 69061 PDF

    suu50n025-06p

    Contextual Info: SUU50N025-06P New Product Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS APPLICATIONS 20 5 nC 20.5


    Original     		SUU50N025-06P O-251 SUU50N025-06P--E3 S-51167--Rev. 13-Jun-05 suu50n025-06p PDF

    sud*50n025-06p

    Abstract: SUD50N025-06P-E3
    Contextual Info: SUD50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5


    Original     		SUD50N025-06P O-252 SUD50N025-06P--E3 18-Jul-08 sud*50n025-06p SUD50N025-06P-E3 PDF

    Contextual Info: SUR50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5


    Original     		SUR50N025-06P O-252 SUR50N025-06P--E3 SUR50N025-06P-T4--E3 08-Apr-05 PDF

    A4466

    Contextual Info: SUU50N025-06P New Product Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS APPLICATIONS 20 5 nC 20.5


    Original     		SUU50N025-06P O-251 SUU50N025-06P--E3 08-Apr-05 A4466 PDF

    sud*50n025-06p

    Abstract: SUD50N025-06P SUD50N025-06P-E3
    Contextual Info: SUD50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5


    Original     		SUD50N025-06P O-252 SUD50N025-06P--E3 08-Apr-05 sud*50n025-06p SUD50N025-06P SUD50N025-06P-E3 PDF

    SUU50N025-06P

    Abstract: 914W
    Contextual Info: SUU50N025-06P New Product Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS APPLICATIONS 20 5 nC 20.5


    Original     		SUU50N025-06P O-251 SUU50N025-06P--E3 18-Jul-08 SUU50N025-06P 914W PDF

    Contextual Info: SUR50N025-06P Vishay Siliconix New Product N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0062 @ VGS = 10 V 78 0.010 @ VGS = 4.5 V 62 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 20 5 nC 20.5


    Original     		SUR50N025-06P O-252 SUR50N025-06P--E3 SUR50N025-06P-T4--E3 18-Jul-08 PDF

    Contextual Info: SQR50N03-06P Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Reverse Lead DPAK for Top Side Cooling 30 RDS(on) (Ω) at VGS = 10 V 0.0065 RDS(on) (Ω) at VGS = 4.5 V 0.0095 ID (A) • Halogen-free According to IEC 61249-2-21


    Original     		SQR50N03-06P O-252 AEC-Q101 2002/95/EC SQR50N03-06P-GE3 11-Mar-11 PDF