MARKING 05L Search Results

Contextual Info: S23LC03 THRU S23LC24 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0292, Rev. - MARKING DIAGRAM Where 05L is S23LC05 05L = Part Name Cautions：Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  86 25-87123907 •

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD102-U4-05L Ultra-Low Capacitance ESD Protection Array for Flow-Through PCB Layout ESD102-U4-05L Data Sheet Revision 1.0, 2013-02-25 Final Power Management & Multimarket Edition 2013-02-25 Published by Infineon Technologies AG

UDT26A05L01

Abstract: RH56 UDT26A05L
Contextual Info: UDT26C A 05L01 Ultra Low Capacitance TVS Array For Uni/Bidirectional Protection UDT26A05L01 series are ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifi cally designed to protect sensitive components which are connected to high-speed data and

ultra low capacitance tvs

Abstract: UBT36C05L01
Contextual Info: UBT36A C 05L01 SERIES Ultra Low Capacitance TVS Array For Uni/Bidirectional Protection UBT36A05L01 series are ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifi cally designed to protect sensitive components which are connected to high-speed data and

SUM75N04-05L

Abstract: SUM75N04 S5014
Contextual Info: SUM75N04-05L New Product Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.005 @ VGS = 10 V 75a 0.006 @ VGS = 4.5 V 75a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature

MARKING 05L

Abstract: SUM75N04 SUM75N04-05L
Contextual Info: SUM75N04-05L New Product Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.005 @ VGS = 10 V 75a 0.006 @ VGS = 4.5 V 75a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature

Contextual Info: SUM75N04-05L New Product Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.005 @ VGS = 10 V 75a 0.006 @ VGS = 4.5 V 75a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature

SUD50N04-05L

Abstract: SUD50N04-05L-E3
Contextual Info: New Product SUD50N04-05L Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0054 at VGS = 10 V 115 0.0069 at VGS = 4.5 V 102 V(BR)DSS (V) 40 • TrenchFET Power MOSFETS • 175 °C Junction Temperature RoHS

Contextual Info: New Product SUD50N04-05L Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0054 at VGS = 10 V 115 0.0069 at VGS = 4.5 V 102 V(BR)DSS (V) 40 • TrenchFET Power MOSFETS • 175 °C Junction Temperature RoHS

SUM110N06-05L

Abstract: SUM110N06-05L-E3
Contextual Info: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package

SUM110N06-05L

Abstract: SUM110N06-05L-E3 C7065
Contextual Info: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package

SUM60N04-05LT

Contextual Info: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature

SUM60N04-05LT

Contextual Info: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature

SUM110N06-05L

Abstract: SUM110N06-05L-E3 MARKING 05L
Contextual Info: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package

Contextual Info: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package

D2GD

Contextual Info: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature

Contextual Info: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package

Contextual Info: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package

Contextual Info: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package

Contextual Info: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature

DIODE T25 4

Abstract: marking WS2 sot W0301016 WS05LUC WS12LUC MARKING 05L DIODE T25 WS2.8LUC WS12L WS05L
Contextual Info: Document: W0301016, Rev: B WS2.8LUC through WS12LUC Transient Voltage Suppressor Features  200 watts peak pulse power tp = 8/20 s  Small package for use in portable electronics  Two devices will protect one line  Ultra Low capacitance for high-speed data lines

MA1T

Abstract: ma23
Contextual Info: 1S 1 CO 1*0 1.CONTACT LEN GTH CONTACT POS.No. L 1,15 OTHERS 2.9 NDTE 2. CONTACT PLATING CONTACT AREA: HOLD 0.1 MICRO METER OVER P d / N M 1, MICRO METER MIN. TERMINAL7 AREA:TIN/LEAD ALL OVER:Ni 1 .2 7 'MICRO METER MIN. NOTE 3.DATE CODE 998 Y E A R 9 8 :1 9 9 8

Contextual Info: 05066 PSOT03LC thru PSOT36LC Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE TVS ARRAY APPLICATIONS ✔ Ethernet - 10/100 Base T ✔ Cellular Phones ✔ FireWire ✔ Audio/Video Inputs ✔ Portable Electronics IEC COMPATIBILITY EN61000-4 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV

marking code 36L

Abstract: transistor marking 36L PSOT03LC PSOT05LC PSOT08LC PSOT12LC PSOT15LC PSOT24LC PSOT36LC
Contextual Info: 05066 PSOT03LC thru PSOT36LC Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE TVS ARRAY APPLICATIONS ✔ Ethernet - 10/100 Base T ✔ Cellular Phones ✔ FireWire ✔ Audio/Video Inputs ✔ Portable Electronics IEC COMPATIBILITY EN61000-4 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV