MARKING 02W Search Results

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

Contextual Info: SIEMENS BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Type Marking Ordering Code Pin Configuration

Q62702B

Abstract: marking 34 diode
Contextual Info: SIEMENS BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Type Marking Ordering Code Pin Configuration

BAT62

Abstract: BAT62-02W SCD80
Contextual Info: BAT62-02W Silicon Schottky Diode
Low barrier diode for detectors up to GHz 2 frequencies 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration BAT62-02W 2 1=C Package 2=A SCD80 Maximum Ratings

a1216 transistor

Abstract: Q62702-A1216
Contextual Info: BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners 2 • Series diode for mobile communication transmit-receiver switch 1 VES05991 Type Marking Ordering Code Pin Configuration Package

BBY55-02W

Abstract: CT10 SCD80
Contextual Info: BBY55-02W Silicon Tuning Diode
Excellent linearity
High Q hyperabrupt tuning diode 2
Low series inductance
Designed for low tuning voltage operation for VCO's in mobile communications equipment 1
Very low capacitance spread VES05991 Type Marking

Contextual Info: SIEMENS BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch Type Marking Ordering Code Pin Configuration BAR 65-02W

diode rectifier siemens

Contextual Info: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution BAT 62-02W L 1 =C Q62702-A1028 h Pin Configuration < Marking Ordering Code CM Type

BAS16

Abstract: bas16 a6 BAS16/S/U/W BAS16-03W a6s marking A6s sot23 BAS16 SOT23 BAS16 transistor BAS1602W a6 bas16
Contextual Info: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ !    " # ,  BAS16-07L4 " , , ! ! ,  ! ,  Type Package Configuration Marking BAS16 BAS16S BAS16U BAS16W BAS16-02L*

ves05991

Abstract: SCD-80
Contextual Info: BBY 53-02W Silicon Tuning Diode • High Q hyperabrupt tuning diode 2 • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Pin Configuration Package BBY 53-02W

Contextual Info: SIEMENS BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch Type Marking Ordering Code Pin Configuration Package BAR 65-02W

DIODE T4 marking

Abstract: Q62702-B0860 VES05991
Contextual Info: BBY 52-02W Silicon Tuning Diode Preliminary data • High Q hyperband tuning diode • Low series inductance 2 • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 1 VES05991 Type Marking Ordering Code Pin Configuration

BAS16-02W

Abstract: BAS1602W SCD80
Contextual Info: BAS16-02W Silicon Switching Diode
For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS16-02W 3 1=C SCD80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current

Q62702-A1028

Contextual Info: BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz 2 frequencies 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration Package BAT 62-02W L 1=C SCD-80

Q62702-A1239

Contextual Info: BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage

BBY52-02W

Abstract: SCD80 MARKING 02W bby5202w
Contextual Info: BBY52-02W Silicon Tuning Diode • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation 2 • For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY52-02W K 1=C SCD80

Q62702-B0862

Abstract: diode T3 Marking diode marking AU
Contextual Info: BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation 2 for VCO’s in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Ordering Code

Q62702-B0858

Contextual Info: BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance 2 • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 1 VES05991 Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration BAT 62-02W L Q62702-A1028 1 =C 2=A Package

Contextual Info: BBY 56-02W Silicon Tuning Diode
Excellent linearity 2
High Q hyperabrupt tuning diode
Low series inductance
Designed for low tuning voltage operation for VCO's in mobile communications equipment 1
Very low capacitance spread VES05991 Type Marking

Q62702B

Abstract: marking L
Contextual Info: SIEMENS BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75