MARKING 004 SOT323 Search Results

Contextual Info: Leshan Radio Co.Ltd General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16WT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-16WT1G 5A Pb-Free SOT-323 3000/Tape&Reel LBC807-25WT1G 5B (Pb-Free)

SOD223

Abstract: SOD-223
Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching diodes LM1MA151WAT1G LM1MA152WAT1G These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low

SOD223

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free packkage is available L2SC1623*LT1G 3 3 COLLECTOR 1 1 BASE 2 2 SOT– 23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

diode T3 Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

MARKING .01 SOT

Abstract: k45 diode bas40wt-05
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAS40WT Features • • • Pow Dissipation PD=200mW Tamb=25℃ Collector Current IF=200mA Collector-base Voltage VR=40V 200mW 40Volt Plastic-Encapsulate

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

a7 surface mount diode

Abstract: AP-202 diode a7 surface mount device PAN202U ANP202U Diode Marking .004 marking A85 MARKING MO MU SOT-323 PAN217
Contextual Info: PAN202U / PANP202U / PAN217U SURFACE MOUNT SWITCHING DIODES SWITCHING DIODE 100m AMPERRES 80 VOLTS SOT-323 SC-70 .012(0.30) .016(0.40) .079(2.00) .094(2.40) .045(1.15) TOP VIEW .053(1.35) _ .012(0.30) .012(0.40) .004(0.10) .0098(0.25) .026(0.65) .071(1.80)

Contextual Info: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Pb-Free package is available L2SC4083PWT1G 3 COLLECTOR z 3 1 BASE 1 2 EMITTER 2 SC-70/SOT-323 Absolute maximum ratings Ta=25 oC Symbol VCBO VCEO Parameter Collector-base voltage Collector-emitter voltage

MARKING .01 SOT

Abstract: BAS40WT-06 bas40wt-05
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAS40WT Features • • • Pow Dissipation PD=200mW Tamb=25℃ Collector Current IF=200mA Collector-base Voltage VR=40V

BAS40WT-05

Abstract: S44 MARKING S43 sot
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAS40WT/-04/-05/-06 Features x x x Pow Dissipation PD=200mW Tamb=25к Forward Current I F=200mA Breakdown Voltage VBR=40V

micro-x marking code E1

Abstract: 0004E4 SOT 86 MARKING E4
Contextual Info: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes LBAV99WT1G LBAV99RWT1G Features • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1. Suggested Applications

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAS40WT/-04/-05/-06 Features x x x Pow Dissipation PD=200mW Tamb=25к Forward Current I F=200mA Breakdown Voltage VBR=40V

sot-323 small signal schottky diode

Contextual Info: PSD461F SURFACE MOUNT SCHOTTKY BARRIER DIODES SMALL SIGNAL SCHOTTKY DIODES 700m AMPERES 20 VOLTS SOT-323 SC-70 .012(0.30) .016(0.40) .079(2.00) .045(1.15) TOP VIEW .094(2.40) .053(1.35) _ .012(0.30) .004(0.10) .0098(0.25) .012(0.40) .026(0.65) .071(1.80)

marking 004 sot323

Contextual Info: WILLAS SOT-323 Plastic-Encapsulate Diodes SOT-323 MMBD4448W SWITCHING DIODES FEATURES z Fast switching speed z Surface mount package ideally suited for automatic insertion z For general purpose switching applications z High conductance z Weight:0.006g z RoHS product for packing code suffix "G"

66s marking

Abstract: BAT64-05W
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAT64-04W BAT64-05W BAT64-06W Features • • • • • Small Signal Schottky Diode For low-loss, fast-recovery, meter protection,

Schottky Barrier Diodes

Abstract: sot-323 small signal schottky diode
Contextual Info: PSD715F/PSD717F/PSD706 SURFACE MOUNT SCHOTTKY BARRIER DIODES SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40~45 VOLTS SOT-323 SC-70 .012(0.30) .016(0.40) .079(2.00) .045(1.15) TOP VIEW .094(2.40) .053(1.35) _ .012(0.30) .004(0.10) .0098(0.25) .012(0.40) .026(0.65)

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAV70WT1G FEATURE ƽSmall plastic SMD package. 3 ƽFor high-speed switching applications. ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV70WT1G A4 3000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Schottky LBAT54CWT1G Barrier Diodes 3 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes LDAN202UT1G 3 FEATURES • Ultra high speed switching • Suitable for high packing density layout. 1 2 • High reliability. • Pb-Free package is available. SOT-323/SC-70 DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907AWT1G FEATURE Pb-Free Package is available. 3 ORDERING INFORMATION 1 r Marking Device Shipping 2 LMBT2907AWT1G 20 3000/Tape&Reel LMBT2907AWT3G 20 10000/Tape&Reel CASE 419–02 , STYLE 3

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE Pb-Free package is available o MAXIMUM RATINGS TA = 25 C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg