MARKING "GD" DIODE Search Results

4T sot 23

Abstract: diode marking 4t marking GD sot-23
Contextual Info: MMBD301 Schottky Barrier Diode SOT-23 Features — Surface mount package ideally suited for automatic insertion. Applications — Sourced from process GD. Ordering Information Dimensions in inches and millimeters Type No. Marking MMBD301 Package Code 4T SOT-23

SOT89 MARKING CODE 43

Contextual Info: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage BAW78D  BAW79D !  Type BAW78D BAW79D ! Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: BAW78./BAW79. Silicon Switching Diodes
Switching applications
High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified

marking code TS

Contextual Info: BAW78./BAW79. Silicon Switching Diodes
Switching applications
High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified

BAW78D

Abstract: BAW78 BAW79D tp200 marking GD
Contextual Info: BAW78./BAW79. Silicon Switching Diodes
Switching applications
High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

A778

Abstract: A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784
Contextual Info: Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

MARKING GA

Abstract: Q62702-A779 Q62702-A778
Contextual Info: SIEM EN S Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications • High breakdown voltage Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering Code tape and reel GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

MARKING GA

Abstract: A779 baw78c
Contextual Info: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8

z6c8

Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b
Contextual Info: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)

Contextual Info: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)

zener gdzj marking

Abstract: zener gdzj
Contextual Info: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives

Contextual Info: 产品规格书 Specification GD SB320S～GD SB360S GOODARK型号 构造 Construction: 用途 接受印栏 ： 金属结合型二极管 请记入贵公司的名称接受日期、责任者人名。 Schottky Barrier Diode : 高速整流用 Application : For High speed Rectifier

Contextual Info: 产品规格书 Specification GD SB370S～GD SB3B0S GOODARK型号 构造 Construction: 用途 接受印栏 ： 金属结合型二极管 请记入贵公司的名称接受日期、责任者人名。 Schottky Barrier Diode : 高速整流用 Application : For High speed Rectifier

Contextual Info: IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified l RoHs Compliant Containing No Lead and Bromide ‚ l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible 

Contextual Info: PS10 Quad Power Sequencing Controller Features General Description ► Sequencing of four supplies, ICs, or subsystems ► Independently programmable delays between open drain PWRGD flags 5.0 to 200ms ► ±10 to ±90V operation ► Tracking in combination with Schottky diodes

Contextual Info: PS10 Quad Power Sequencing Controller Features General Description ► Sequencing of four supplies, ICs, or subsystems ► Independently programmable delays between open drain PWRGD flags 5ms to 200ms ► ±10V to ±90V operation ► Tracking in combination with Schottky diodes

Contextual Info: PD - 96371B IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V

Contextual Info: PS10 Quad Power Sequencing Controller Features General Description ► Sequencing of four supplies, ICs, or subsystems ► Independently programmable delays between open drain PWRGD flags 5.0 to 200ms ► ±10 to ±90V operation ► Tracking in combination with Schottky diodes

F0413

Abstract: diode led uv PS10 PS10NG 665K PS10NG-G PS10s
Contextual Info: PS10 Quad Power Sequencing Controller Features General Description ► Sequencing of four supplies, ICs, or subsystems ► Independently programmable delays between open drain PWRGD flags 5.0 to 200ms ► ±10 to ±90V operation ► Tracking in combination with Schottky diodes

IRL3103

Abstract: 5M MARKING CODE SCHOTTKY DIODE
Contextual Info: PD-95435 IRL3103D2PbF FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l l Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application Lead-Free D VDSS = 30V

IRL3103

Contextual Info: PD-95435 IRL3103D2PbF FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l l Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application Lead-Free D VDSS = 30V

IRFIB7N50L

Abstract: SiHFIB7N50L SiHFIB7N50L-E3 ktp12
Contextual Info: IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration

IRFIB7N50L

Abstract: SiHFIB7N50L SiHFIB7N50L-E3 ktp12
Contextual Info: IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration